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Wiley电子期刊(8)
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在“
Elsevier电子期刊
”中,
命中:
377
条,耗时:0.072965 秒
在所有数据库中总计命中:
468
条
1.
Influence of Ge
and
GeO
2
on the microstructure
and
varistor properties of TiO
2
-Ta
2
O
5
-CaCO
3
ceramics
作者:
Kunyong Kang
a
;
Zhifeng Zheng
a
;
Sida Xie
a
;
Jun Zhang
a
;
Kaimeng Xu
a
;
Lei Tao
a
;
Xuequan Rong
b
;
Zhefeng Xu
c
;
Jikang Yan
c
;
d
;
e
;
scyjk@163.com
;
Guoyou Gan
c
;
d
;
e
;
ganguoyou@sina.com
关键词:
TiO2 varistor
;
Microstructure
;
Varistor property
;
Co-doping
;
Ge
;
GeO2
刊名:Ceramics International
出版年:2017
2.
TMAH-based wet surface pre-treatment for reduction of
leakage
current
in AlGaN/GaN MIS-HEMTs
作者:
Young Jun Yoon
;
Jae Hwa Seo
;
Min Su Cho
;
Hee-Sung Kang
;
Chul-Ho Won
;
In Man Kang
;
imkang@ee.knu.ac.kr" class="auth_mail" title="E-mail the corresponding author
;
Jung-Hee Lee
;
jlee@ee.knu.ac.kr" class="auth_mail" title="E-mail the corresponding author
关键词:
GaN
;
MIS-HEMT
;
Surface treatment
;
Leakage
current
;
Breakdown
voltage
;
TMAH
刊名:Solid State Electronics
出版年:2016
3.
Investigation of surface related
leakage
current
in AlGaN/GaN
High
Electron Mobility Transistors
作者:
J.K. Kaushik
a
;
janeshkaushik@sspl.drdo.in" class="auth_mail" title="E-mail the corresponding author
;
V.R. Balakrishnan
a
;
D. Mongia
a
;
U. Kumar
a
;
S. Dayal
a
;
B.S. Panwar
b
;
R. Muralidharan
c
关键词:
Surface
leakage
current
;
Conductance-DLTS
;
Hopping conduction
;
Surface states
;
Hole-like traps
;
Current
collapse
刊名:Thin Solid Films
出版年:2016
4.
Influence of Cr
2
O
3
on
high
ly nonlinear properties
and
low
leakage
current
of ZnO-Bi
2
O
3
varistor ceramics
作者:
Hairui Bai
a
;
Shuhui Li
a
;
Yunhan Zhao
a
;
Zhijun Xu
a
;
zhjxu@sohu.com" class="auth_mail" title="E-mail the corresponding author
;
zhjxu@lcu.edu.cn" class="auth_mail" title="E-mail the corresponding author
;
Ruiqing Chu
a
;
Jigong Hao
a
;
Chong Chen
a
;
Huaiyong Li
a
;
Yunyun Gong
a
;
Guorong Li
b
关键词:
ZnO&ndash
;
Bi2O3-based varistors
;
High
nonlinear coefficient
;
Low
leakage
current
刊名:Ceramics International
出版年:2016
5.
TCAD analysis of the
leakage
current
and
breakdown
versus temperature of GaN-on-Silicon vertical structures
作者:
Davide Cornigli
;
Federico Monti
;
Susanna Reggiani
;
susanna.reggiani@unibo.it" class="auth_mail" title="E-mail the corresponding author
;
Elena Gnani
;
Antonio Gnudi
;
Giorgio Baccarani
关键词:
GaN-on-Silicon structure
;
TCAD modeling
;
Impact-ionization model
;
Breakdown
voltage
;
Temperature dependence
刊名:Solid State Electronics
出版年:2016
6.
Inkjet printable
and
low
annealing temperature gate-dielectric based on polymethylsilsesquioxane for flexible n-channel OFETs
作者:
Afshin Dadv
and
;
Jianping Lu
;
jianping.lu@nrc-cnrc.gc.ca" class="auth_mail" title="E-mail the corresponding author
;
Christophe Py
;
Ta-Ya Chu
;
Raluca Movileanu
;
Ye Tao
;
ye.tao@nrc-cnrc.gc.ca" class="auth_mail" title="E-mail the corresponding author
关键词:
Spin-on-glass
;
Inkjet printable dielectric
;
Low
annealing temperature
;
Flexible n-channel transistors
;
Low
leakage
current
and
high
breakdown
voltage
刊名:Organic Electronics
出版年:2016
7.
Electrochemical Preparation of In-Silicon Hierarchical Networks of Regular Out-Of-Plane Macropores Interconnected by Secondary In-Plane Pores Through Controlled Inhibition of
Breakdown
Effects
作者:
Chiara Cozzi
;
Giovanni Polito
;
Lucanos Marsilio Strambini
;
Giuseppe Barillaro
;
g.barillaro@iet.unipi.it" class="auth_mail" title="E-mail the corresponding author
关键词:
hierarchical networks
;
electrochemical etching
;
breakdown
inhibition
;
photogeneration
;
porous silicon
;
hydrogen peroxide
刊名:Electrochimica Acta
出版年:2016
8.
Comparison of electrical performances of two n-in-p detectors with different implant type of guard ring by TCAD simulation
作者:
Mohammed Mekheldi
a
;
mmekheldi@cdta.dz
;
Slimane Oussalah
a
;
soussalah@cdta.dz
;
Abdenour Lounis
b
;
Nourredine Brihi
c
关键词:
Breakdown
voltage
;
Guard ring
;
n-in-p silicon detector
;
TCAD simulation
刊名:Results in Physics
出版年:2016
9.
Ge-added TiO
2
-Ta
2
O
5
-CaCO
3
varistor ceramics
作者:
Kunyong Kang
a
;
b
;
c
;
Jikang Yan
a
;
b
;
c
;
scyjk@163.com" class="auth_mail" title="E-mail the corresponding author
;
Guoyou Gan
a
;
b
;
c
;
Jinghong Du
a
;
b
;
c
;
Jiamin Zhang
a
;
b
;
c
;
Yichun Liu
a
;
b
;
c
关键词:
TiO2 varistor
;
Liquid-phase sintering
;
Nonlinear coefficient
;
Breakdown
voltage
;
Ge
刊名:Ceramics International
出版年:2016
10.
Analytical PSpice model for SiC MOSFET based
high
power modules
作者:
Daniel Johannesson
;
daniel.johannesson@se.abb.com" class="auth_mail" title="E-mail the corresponding author
;
Muhammad Nawaz
muhammad.nawaz@se.abb.com" class="auth_mail" title="E-mail the corresponding author
关键词:
4H&ndash
;
SiC
;
4H&ndash
;
SiC MOSFET
;
Device modeling
;
Silicon carbide
;
PSpice
;
SiC power modules
刊名:Microelectronics Journal
出版年:2016
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