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Elsevier电子期刊(85)
在“
Elsevier电子期刊
”中,
命中:
85
条,耗时:小于0.01 秒
在所有数据库中总计命中:
85
条
1.
Investigation of capacitance voltage characteristics of strained Si/SiGe n-channel
MODFET
varactor
作者:
Y. Elogail
a
;
b
;
yasmine.elogail@iht.uni-stuttgart.de" class="auth_mail" title="E-mail the corresponding author
;
E. Kasper
a
;
F. Gunzer
b
;
A. Shaker
c
;
J. Schulze
a
关键词:
MODFET
;
Silicon germanium
;
Capacitance voltage characteristics
;
MODFET
-varactor
;
Modulation doping
刊名:Solid State Sciences
出版年:2016
2.
Comparative study on performance of cubic Al
x
Ga
1?
x
N/GaN nanostructures
MODFET
s and MOS-MODFETs
作者:
Driss Bouguenna
;
A. Boudghene Stambouli
;
N. Mekkakia Maaza
;
A. Zado
;
D.J. As
关键词:
Cubic AlxGa1&minus
;
xN/GaN
;
Nanostructures
;
Device simulation
;
MODFET
;
MOS-
MODFET
;
Nextnano3
刊名:Superlattices and Microstructures
出版年:2013
3.
Terahertz imaging using strained-Si
MODFET
s as sensors
作者:
Y.M. Meziani
a
;
E. Garcì
;
a-Garcì
;
a
a
;
1
;
J.E. Velá
;
zquez-Pé
;
rez
a
;
js@usal.es
;
D. Coquillat
b
;
N. Dyakonova
b
;
W. Knap
b
;
I. Grigelionis
c
;
K. Fobelets
d
关键词:
Terahertz
;
SiGe
;
MODFET
;
Imaging
;
Sensors
刊名:Solid-State Electronics
出版年:2013
4.
A precise physics-based compact model for 2-DEG charge density in GaAs HEMTs applicable in all regions of device operation
作者:
Sourabh Khandelwal
;
sourabh.khandelwal@iet.ntnu.no
;
Nitin Goyal
;
Tor A. Fjeldly
关键词:
AlGaAs/GaAs HEMT
;
2-DEG charge density
;
Analytical models
;
MODFET
s
刊名:Solid-State Electronics
出版年:2013
5.
A charge-based capacitance model for AlGaAs/GaAs HEMTs
作者:
Sourabh Khandelwal
a
;
sourabh.khandelwal@ntnu.no
;
F.M. Yigletu
b
;
B. Iñ
;
iguez
b
;
Tor A. Fjeldly
a
关键词:
AlGaAs/GaAs HEMT
;
2-DEG charge density
;
Analytical models
;
MODFET
s
刊名:Solid-State Electronics
出版年:2013
6.
Low-frequency noise in buried-channel SiGe n-
MODFET
s
作者:
Anuj Madan
;
John D. Cressler
;
Steven J. Koester
关键词:
SiGe
;
Low-frequency noise
;
MODFET
;
Carrier number fluctuations
;
Noise spectral density
刊名:Solid-State Electronics
出版年:2009
7.
A simple parallel conduction extraction method (SPCEM) for
MODFET
s and undoped GaN-based HEMTs
作者:
S.B. Lisesivdin
;
N. Balkan
;
E. Ozbay
关键词:
Parallel conduction
;
Mixed conduction
;
Multi-carrier
;
MODFET
;
HEMT
;
QMSA
刊名:Microelectronics Journal
出版年:2009
8.
A physics based compact model of I-V and C-V characteristics in AlGaN/GaN HEMT devices
作者:
Sourabh Kh
;
elwal
;
T.A. Fjeldly
关键词:
AlGaN/GaN HEMT
;
Compact models
;
Analytical models
;
MODFET
s
刊名:Solid-State Electronics
出版年:2012
9.
Beating of the oscillations in the magnetocapacitance of a
MODFET
with Rasba spin–orbit interaction
作者:
G.S. Kliros
;
P.C. Divari
关键词:
Spin–
;
orbit interaction
;
MODFET
s
;
Mesoscopic devices
;
Lateral surface superlattices
;
Magnetocapacitance
刊名:Microelectronics Journal
出版年:2007
10.
Anomalous effects of temperature and UV illumination on the operation of AlGaN/GaN
MODFET
作者:
Pouya Valizadeh
;
Egor Alekseev
;
Dimitris Pavlidis
;
Feng Yun and Hadis Morkoç
关键词:
Enhancement-mode
;
MODFET
;
Current collapse
;
Annealing
刊名:Solid-State Electronics
出版年:2006
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