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Elsevier电子期刊(4)
在“
Elsevier电子期刊
”中,
命中:
4
条,耗时:小于0.01 秒
在所有数据库中总计命中:
4
条
1.
Study of substrate orientations impact on Ultra Thin Buried Oxide (UTBOX) FDSOI High-K Metal gate technology performances
作者:
Imed Ben Akkez
;
Claire Fenouillet-Beranger
;
Antoine Cros
;
Pierre Perreau
;
S茅batien Haendler
;
Olivier
Weber
;
Fran莽ois Andrieu
;
D. Pellissier-Tanon
;
F. Abbate
;
C. Richard
;
R. Beneyton
;
P. Gouraud
;
A. Margain
;
C. Borowiak
;
E. Gourvest
;
K.K. Bourdelle
;
B.Y. Nguyen
;
T. Poiroux
;
Thomas Skotnicki
;
Olivier
Faynot
;
et al.
关键词:
Ultra Thin Buried Oxide FDSOI
;
Rotated/non-rotated substrate
;
Low temperature
;
Low filed mobility
刊名:Solid-State Electronics
出版年:December, 2013
2.
Integration of diamond in fully-depleted silicon-on-insulator technology as buried insulator: A theoretical analysis
作者:
Jean-Paul Mazellier
;
Olivier
Faynot
;
Sorin Cristoloveanu
;
Simon Deleonibus
;
Philippe Bergonzo
关键词:
Diamond properties and applications
;
Silicon-on-insulator (SOI)
;
Thermal properties
;
Electrical properties
刊名:Diamond and Related Materials
出版年:2008
3.
A systematic investigation of work function in advanced metal gate–HfO
2
–SiO
2
structures with bevel oxide
作者:
Atsushi Kuriyama
;
Jé
;
rô
;
me Mitard
;
Olivier
Faynot
;
Laurent Bré
;
vard
;
Laurence Clerc
;
Amé
;
lie Tozzo
;
Vincent Vidal
;
Simon Deleonibus
;
Hiroshi Iwai
;
Sorin Cristoloveanu
关键词:
Band-to-band tunneling
;
Double gate
;
Gated p–
;
i–
;
n diode
;
High-K dielectric
;
Scaling
;
Subthreshold swing
;
Tunnel field effect transistor
刊名:Solid-State Electronics
出版年:2007
4.
Foreword
作者:
Raphaë
;
l Clerc
;
Olivier
Faynot
;
Nelly Kernevez
刊名:Solid-State Electronics
出版年:2007
1
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作者(4)
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2027年及以后(1)
2008年(1)
2007年(2)
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