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Elsevier电子期刊(19)
在“
Elsevier电子期刊
”中,
命中:
19
条,耗时:0.0359908 秒
在所有数据库中总计命中:
19
条
1.
P
ro
p
erties of InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors modified by surface treatment
作者:
D. Gregu&
scaron
;
ová
;
p>a
p>
p>
;
p>
p>Dagmar.Gregusova@savba.sk
p>
p>
;
p>
p>elekgreg@savba.sk
p>
;
F. Gucmann
p>a
p>
;
R. Kú
;
dela
p>a
p>
;
M. Miču&
scaron
;
í
;
k
p>b
p>
;
R. Stoklas
p>a
p>
;
L. Vá
;
lik
p>a
p>
;
J. Gregu&
scaron
;
p>c
p>
;
M. Blaho
p>a
p>
;
P
.
Kordo
&
scaron
;
p>d
p>
关键词:
Surface treatment
;
III&ndash
;
V Semiconductors
;
Gallium arsenide
;
Heterostructure field effect transistors
;
Transistor characteristics
;
Tra
p
state density
刊名:A
pp
lied Surface Science
出版年:2017
2.
Electrical and structural characterization of AlGaN/GaN field-effect transistors with recessed gate
作者:
M. Mikulics
p>a
p>
;
A. Fox
p>a
p>
;
M. Marso
p>b
p>
;
D. Grü
;
tzmacher
p>a
p>
;
D. Donoval
p>c
p>
;
P
.
Kordo
&
scaron
;
p>c
p>
p>
;
p>
p>d
p>
p>
;
p>
p>
p
eter.
kordo
s@savba.sk
p>
关键词:
Gallium nitride
;
P
lasma assisted etching
;
Electrical
p
ro
p
erties
;
P
hotoluminescence
;
Transistor
刊名:Vacuum
出版年:2012
3.
Gate leakage current in GaN-based mesa- and
p
lanar-ty
p
e heterostructure field-effect transistors
作者:
J. Ková
;
?
p>a
p>
p>
;
p>
p>jaroslav.kovac@stuba.sk
p>
;
A. &
Scaron
;
atka
p>a
p>
;
A. Chvá
;
la
p>a
p>
;
D. Donoval
p>a
p>
;
P
.
Kordo
&
scaron
;
p>a
p>
p>
;
p>
p>b
p>
;
S. Delage
p>c
p>
刊名:Microelectronics Reliability
出版年:2012
4.
On uniqueness for a semilinear
p
arabolic system cou
p
led in an equation and a boundary condition
作者:
Kordo
&
scaron
;
Matej
关键词:
P
arabolic system
;
Uniqueness
刊名:Journal of Mathematical Analysis and A
pp
lications
出版年:2004
5.
Electrical overstress in AlGaN/GaN HEMTs: study of degradation
p
rocesses
作者:
Kuzmí
k ;
J.
;
P
ogany
;
D.
;
Gornik
;
E.
;
Javorka
;
P
.
;
Kordo
&
scaron
;
P
.
关键词:
GaN HEMT
;
Electrical overstress and electrostatic discharge
;
Device degradation
刊名:Solid-State Electronics
出版年:2004
6.
Material and device issues of AlGaN/GaN HEMTs on silicon substrates
作者:
Javorka
;
P
.
;
Alam
;
A.
;
Marso
;
M.
;
Wolter
;
M.
;
Kuzmik
;
J.
;
Fox
;
A.
;
Heuken
;
M.
;
Kordo
&
scaron
;
P
.
关键词:
GaN-based HEMTs
;
Si substrates
;
I&ndash
;
V characteristics
刊名:Microelectronics Journal
出版年:2003
7.
P
atterning of 25-nm-wide silicon webs with an as
p
ect ratio of 13
作者:
Trellenkam
p
;
St.
;
Moers
;
J.
;
van der Hart
;
A.
;
Kordo
&
scaron
;
P
.
;
Lü
;
th
;
H.
关键词:
Nano
p
atterning
;
Hydrogen silsesquioxane
;
Electron beam lithogra
p
hy
;
Reactive ion etching
刊名:Microelectronic Engineering
出版年:2003
8.
Effect of surface
p
assivation on
p
erformance of AlGaN/GaN/Si HEMTs
作者:
Berná
t ;
J.
;
Javorka
;
P
.
;
Fox
;
A.
;
Marso
;
M.
;
Lü
;
th
;
H.
;
Kordo
&
scaron
;
P
.
关键词:
GaN
;
AlGaN
;
HEMT
;
P
assivation
刊名:Solid-State Electronics
出版年:2003
9.
Wet low-tem
p
erature gate oxidation for nanoscale vertical field-effect transistors
作者:
Goryll
;
M.
;
Moers
;
J.
;
Trellenkam
p
;
St.
;
Vescan
;
L.
;
Marso
;
M.
;
Kordo
&
scaron
;
P
.
;
Lü
;
th
;
H.
关键词:
73.20.
&minus
;
r
;
73.40.Qv
;
77.55.+f
;
Gate oxide
;
Vertical field-effect transistor
;
Low tem
p
erature oxidation
刊名:
P
hysica E
出版年:2003
10.
P
hotoenhanced wet chemical etching of n
p>+
p>-do
p
ed GaN
作者:
&
Scaron
;
kriniarová
;
J.
;
van der Hart
;
A.
;
Bochem
;
H.
P
.
;
Fox
;
A.
;
Kordo
&
scaron
;
P
.
关键词:
Gallium nitride
;
Etching
;
Anisotro
p
ic etching
刊名:Materials Science and Engineering: B
出版年:2002
1
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