设为首页
收藏本站
网站地图
|
English
|
公务邮箱
About the library
Background
History
Leadership
Organization
Readers' Guide
Opening Hours
Collections
Help Via Email
Publications
Electronic Information Resources
常用资源
电子图书
期刊论文
学位会议
外文资源
特色专题
内部出版物
SpringerLink电子期刊(3)
Elsevier电子期刊(17)
在“
Elsevier电子期刊
”中,
命中:
17
条,耗时:0.0160212 秒
在所有数据库中总计命中:
20
条
1.
Creation of a new high voltage device with capable of enhancing driving current and breakdown voltage
作者:
Mohammad K. Anvarifard
m.anvarifard@guilan.ac.ir
关键词:
Driving current
;
Breakdown voltage
;
SOI
MESFET
;
N-type and P-type wells
刊名:Materials Science in Semiconductor Processing
出版年:2017
2.
Symmetrical
SOI
MESFET
with a dual cavity region (DCR-SOI MESFET) to promote high-voltage and radio-frequency performances
作者:
Mohammad K. Anvarifard
m.anvarifard@guilan.ac.ir" class="auth_mail" title="E-mail the corresponding author
关键词:
breakdown voltage
;
p-type cavity region
;
Potential profile
;
SOI
-
MESFET
;
Radio-frequency
刊名:Superlattices and Microstructures
出版年:2016
3.
Increase in the scattering of electric field lines in a new high voltage
SOI
MESFET
作者:
Mohammad K. Anvarifard
m.anvarifard@guilan.ac.ir" class="auth_mail" title="E-mail the corresponding author
关键词:
Breakdown voltage
;
Driving current
;
Electric field
;
Metal-semiconductor field-effect transistor (
MESFET
)
;
Silicon-on-insulator (
SOI
)
刊名:Superlattices and Microstructures
出版年:2016
4.
A novel high-performance high-frequency
SOI
MESFET
by the damped electric field
作者:
Ali A. Orouji
;
aliaorouji@semnan.ac.ir" class="auth_mail" title="E-mail the corresponding author
;
Ahmad Khayatian
;
Parviz Keshavarzi
关键词:
Electric field
;
High frequency
;
Silicon-on-insulator
;
MESFET
刊名:Physica E: Low-dimensional Systems and Nanostructures
出版年:2016
5.
Avalanche breakdown in
SOI
MESFET
s
作者:
William Lepkowski
;
Seth J. Wilk
;
Anuradha Parsi
;
Marco Saraniti
;
David Ferry
;
Trevor J. Thornton
关键词:
Silicon-on-insulator
;
Partially-depleted
;
Avalanche multiplication
;
MESFET
s
;
Schottky junction
刊名:Solid-State Electronics
出版年:January, 2014
6.
A novel high frequency
SOI
MESFET
by modified gate capacitances
作者:
Ali A. Orouji
;
Zeinab Ramezani
;
P. Keshavarzi
;
Amirhossein Aminbeidokhti
关键词:
Modified gate capacitances
;
MESFET
;
Silicon-On-Insulator
;
High frequency
刊名:Superlattices and Microstructures
出版年:2013
7.
A silicon-on-insulator metal-semiconductor field-effect transistor with an L-shaped buried oxide for high output-power density
作者:
Zeinab Ramezani
;
Ali A. Orouji
关键词:
L-shaped buried oxide
;
Silicon on insulator
;
Metal&ndash
;
semiconductor field-effect transistor
;
Maximum output-power density
刊名:Materials Science in Semiconductor Processing
出版年:March, 2014
8.
Modeling of the subthreshold current and subthreshold swing of fully depleted short-channel Si–
SOI
-
MESFET
s
作者:
S. Jit
;
Prashant Kumar P
;
ey
;
Pramod Kumar Tiwari
关键词:
SOI
-
MESFET
;
Threshold voltage
;
Subthreshold current
;
Subthreshold swing
;
Short-channel effect
刊名:Solid-State Electronics
出版年:2009
9.
Compact modeling of a PD
SOI
MESFET
for wide temperature designs
作者:
A. Balijepalli
;
J. Ervin
;
W. Lepkowski
;
Y. Cao
;
T.J. Thornton
关键词:
Silicon-on-insulator
;
MESFET
s
;
SPICE model
;
TOM3 capacitance model
;
Verilog-A
刊名:Microelectronics Journal
出版年:2009
10.
Silicon on insulator
MESFET
s for RF amplifiers
作者:
Seth J. Wilk
;
Asha Balijepalli
;
Joseph Ervin
;
William Lepkowski
;
Trevor J. Thornton
关键词:
Silicon on insulator technology
;
MESFET
;
TOM3
;
Source degenerated
;
Low-noise amplifier
刊名:Solid-State Electronics
出版年:2010
1
2
按检索点细分(17)
题名(10)
关键词(5)
文摘(16)
按出版年细分(17)
2027年及以后(2)
2017年(1)
2016年(3)
2013年(1)
2010年(1)
2009年(2)
2006年(1)
2005年(2)
2002年(1)
2000年(1)
2000年及以前(2)
NGLC 2004-2010.National Geological Library of China All Rights Reserved.
Add:29 Xueyuan Rd,Haidian District,Beijing,PRC. Mail Add: 8324 mailbox 100083
For exchange or info please contact us via
email
.