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Wiley电子期刊(24)
SpringerLink电子期刊(536)
Elsevier电子期刊(2518)
Springer电子图书(2)
NATURE电子期刊(34)
ACS电子期刊(273)
在“
Elsevier电子期刊
”中,
命中:
2,518
条,耗时:0.0149918 秒
在所有数据库中总计命中:
3,387
条
1.
Room temperature current-voltage (I-V) characteristics of Ag/InGaN/n-Si
Schottky
barrier
diode
作者:
Erman Erdoğan
a
;
e.erdogan@alparslan.edu.tr
;
Mutlu Kundakç
;
ı
b
关键词:
Current-voltage characteristics
;
Ag
Schottky
contact
;
InGaN
;
Room temperature
;
Schottky
barrier
diode
;
Thermionic vacuum arc (TVA)
刊名:Physica B: Condensed Matter
出版年:2017
2.
A novel self-aligned charge plasma
Schottky
barrier
tunnel FET using work function engineering
作者:
Sangeeta Singh
a
;
sangeeta.singh@iiitdmj.ac.in
;
Arun Pratap Singh
b
;
P.N. Kondekar
a
关键词:
Schottky
barrier
tunnel FET (SB-TFET)
;
Charge plasma
;
Work-function engineering
;
Sub-threshold slope (SS)
;
Drain induced
barrier
lowering (DIBL)
;
Random dopant fluctuations (RDFs)
刊名:Microelectronic Engineering
出版年:2017
3.
Investigation of ultrathin Pt/ZrO
2
-Al
2
O
3
-ZrO
2
/TiN DRAM capacitors
Schottky
barrier
height by internal photoemission spectroscopy
作者:
Sang Yeon Lee
a
;
Jaewan Chang
b
;
Jaehyung Choi
b
;
Younsoo Kim
b
;
HanJin Lim
b
;
Hyeongtag Jeon
c
;
hjeon@hanyang.ac.kr
;
Hyungtak Seo
a
;
d
;
hseo@ajou.ac.kr
关键词:
MIM capacitor
;
Internal photoemission spectroscopy
;
Schottky
barrier
height
刊名:Current Applied Physics
出版年:2017
4.
Tuning the tunneling probability by mechanical stress in
Schottky
barrier
based reconfigurable nanowire transistors
作者:
Tim Baldauf
a
;
Tim.Baldauf@namlab.com
;
André
;
Heinzig
a
;
Jens Trommer
b
;
Thomas Mikolajick
a
;
b
;
Walter Michael Weber
a
;
b
关键词:
Silicon nanowire
;
Reconfigurable logic
;
CMOS
;
RFET
;
SBFET
;
Tunneling
;
Schottky
junction
;
Stress
;
Strain
;
Symmetry
;
Deformation potential
;
Self-limited oxidation
;
Simulation
;
TCAD
刊名:Solid-State Electronics
出版年:2017
5.
Metal-insulator-SiC
Schottky
structures using HfO
2
and TiO
2
dielectrics
作者:
I.R. Kaufmann
a
;
ivanrodrigo.kaufmann@gmail.com
;
A. Pick
b
;
M.B. Pereira
b
;
H. Boudinov
a
;
b
关键词:
MIS structure
;
SiC
;
Schottky
barrier
height
;
HfO2
;
TiO2
刊名:Thin Solid Films
出版年:2017
6.
Effective
Schottky
barrier
lowering of Ni silicide/p-Si(100) using an ytterbium confinement structure for high performance n-type MOSFETs
作者:
Keng-Hui Shen
a
;
Szu-Hung Chen
b
;
Wei-Ting Liu
a
;
Bao-Hsien Wu
a
;
Lih-Juann Chen
a
;
ljchen@mx.nthu.edu.tw
关键词:
Schottky
barrier
;
nMOSFET
;
NiSi
;
Yb confinement
刊名:Materials & Design
出版年:2017
7.
Atomic nature of the
Schottky
barrier
height formation of the Ag/GaAs(001)-2 × 4 interface: An in-situ synchrotron radiation photoemission study
作者:
Chiu-Ping Cheng
a
;
cpcheng@mail.ncyu.edu.tw" class="auth_mail" title="E-mail the corresponding author
;
Wan-Sin Chen
a
;
b
;
Keng-Yung Lin
c
;
Guo-Jhen Wei
a
;
Yi-Ting Cheng
a
;
Yen-Hsun Lin
c
;
Hsien-Wen Wan
c
;
Tun-Wen Pi
b
;
pi@nsrrc.org.tw" class="auth_mail" title="E-mail the corresponding author
;
Raymond T. Tung
d
;
Jueinai Kwo
e
;
raynien@phys.nthu.edu.tw" class="auth_mail" title="E-mail the corresponding author
;
Minghwei Hong
c
;
mhong@phys.ntu.edu.tw" class="auth_mail" title="E-mail the corresponding author
关键词:
Schottky
barrier
height
;
III&ndash
;
V semiconductor
;
Synchrotron radiation photoemission
刊名:Applied Surface Science
出版年:2017
8.
Schottky
-type edge passivation of silicon solar cells
作者:
Jaeho Choi
;
Bhaskar Parida
;
Srikanta Palei
;
Keunjoo Kim
;
kimk@chonbuk.ac.kr" class="auth_mail" title="E-mail the corresponding author
关键词:
Si solar cell
;
Edge passivation
;
Ag nanodots
;
Schottky
barrier
刊名:Solar Energy Materials and Solar Cells
出版年:2017
9.
Evidence of minority carrier traps contribution in deep level transient spectroscopy measurement in n-GaN
Schottky
diode
作者:
S. Amor
a
;
b
;
A. Ahaitouf
a
;
Az Ahaitouf
c
;
J.P. Salvestrini
b
;
d
;
jean-paul.salvestrini@univ-lorraine.fr
;
A. Ougazzaden
d
关键词:
DLTS
;
Carrier traps
;
GaN
;
Schottky
diode
刊名:Superlattices and Microstructures
出版年:2017
10.
Improved
Schottky
behavior of GaN nanorods using hydrogen plasma treatment
作者:
Maddaka Reddeppa
a
;
Byung-Guon Park
a
;
Sang-Tae Lee
a
;
Nguyen Hoang Hai
a
;
Moon-Deock Kim
a
;
mdkim@cnu.ac.kr
;
Jae-Eung Oh
b
关键词:
GaN nanorods
;
Schottky
diode
;
Leakage current
;
Hydrogenation
;
Surface state density
刊名:Current Applied Physics
出版年:2017
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