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SpringerLink电子期刊(5)
Elsevier电子期刊(863)
在“
Elsevier电子期刊
”中,
命中:
863
条,耗时:0.1139731 秒
在所有数据库中总计命中:
868
条
1.
Axial pn-junctions formed by MOVPE using DEZn and TESn in vapor
x2013
;liquid
x2013
;solid grown GaAs nanowires
作者:
I. Regolin
a
;
ingo.regolin@uni-due.de
;
C. Gutsche
a
;
A. Lysov
a
;
K. Blekker
a
;
Zi-An Li
b
;
M. Spasova
b
;
W. Prost
a
;
F.-J. Tegude
a
关键词:
A1. High-resolution electron transmission microscopy
;
A1. Nanostructures
;
A3. Metalorganic vapor-phase epitaxy
;
B1. Arsenates
;
B1. Gallium compounds
;
B2.
Semiconducting
III
x2013
;
V materials
刊名:Journal of Crystal Growth
出版年:2011
2.
Carbon as an acceptor in cubic GaN/3C
x2013
;SiC
作者:
A. Zado
a
;
a.zado@uni-paderborn.de"" rel=""nofollow
;
E. Tschumak
a
;
J.W. Gerlach
b
;
K. Lischka
a
;
D.J. As
a
关键词:
A1. Characterization
;
A1. Doping
;
A1.
Semiconducting
III
x2013
;
V materials
;
A3. Molecular beam epitaxy
;
B1. Gallium compounds
;
B1. Nitrides
;
B2.
Semiconducting
gallium compounds
刊名:Journal of Crystal Growth
出版年:2011
3.
Compositionally-graded InGaAs
x2013
;InGaP alloys and GaAsSb alloys for metamorphic InP on GaAs
作者:
Li Yang
a
;
viviliyang@gmail.com"" rel=""nofollow
;
Mayank T. Bulsara
b
;
Kenneth E. Lee
c
;
Eugene A. Fitzgerald
b
关键词:
A1. Line defects
;
A3. Metalorganic chemical vapor deposition
;
B1. Alloys
;
B1. Antimonides
;
B2.
Semiconducting
III
x2013
;
V materials
;
B2.
Semiconducting
ternary compounds
刊名:Journal of Crystal Growth
出版年:2011
4.
Low angle incidence microchannel epitaxy of GaN grown by ammonia-based metal
x2013
;organic molecular beam epitaxy
作者:
Chia-Hung Lin
;
a
;
mfamizuki@hotmail.com
;
Ryota Abe
a
;
Takahiro Maruyama
a
;
Shigeya Naritsuka
a
关键词:
A3. Metal
x2013
;
organic molecular beam epitaxy
;
B1. Nitrides
;
B2.
Semiconducting
III
x2013
;
V materials
刊名:Journal of Crystal Growth
出版年:2011
5.
Migration-enhanced metal
x2013
;organic chemical vapor deposition of Al
x
In
1−x
N/GaN heterostructures (x>0.75) on c-plane sapphire
作者:
Daniel Billingsley
a
;
daniel@s-et.com"" rel=""nofollow
;
Jinwei Yang
a
;
Remis Gaska
a
;
Michael Shur
b
关键词:
A3. Metal
x2013
;
organic chemical vapor deposition
;
B1. Nitrides
;
B2.
Semiconducting
III
x2013
;
V materials
刊名:Journal of Crystal Growth
出版年:2011
6.
Growth mechanism of InAs
x2013
;InSb heterostructured nanowires grown by chemical beam epitaxy
作者:
Lorenzo Lugani
a
;
l.lugani@sns.it"" rel=""nofollow
;
Daniele Ercolani
a
;
b
;
Fabio Beltram
a
;
b
;
Lucia Sorba
a
;
b
关键词:
A1. Crystal morphology
;
A1. Growth models
;
A1. Low-dimensional structures
;
A1. Nanostructures
;
A2. Chemical beam epitaxy
;
B2.
Semiconducting
III
x2013
;
V materials
刊名:Journal of Crystal Growth
出版年:2011
7.
Direct observation by transmission electron microscopy of the influence of Ni catalyst-seeds on the growth of GaN
x2013
;AlGaN axial heterostructure nanowires
作者:
L. Lari
a
;
d
;
l.lari@sheffield.ac.uk"" rel=""nofollow
;
T. Walther
a
;
M.H. Gass
b
;
L. Geelhaar
c
;
1
;
C. Chè
;
ze
c
;
1
;
H. Riechert
c
;
1
;
T.J. Bullough
d
;
P.R. Chalker
d
关键词:
A3. Molecular beam epitaxy
;
B1. Nanomaterials
;
B1. Nitrides
;
B2.
Semiconducting
III
x2013
;
V materials
刊名:Journal of Crystal Growth
出版年:2011
8.
MBE
x2013
;VLS growth of catalyst-free
III
x2013
;V axial heterostructure nanowires on (1 1 1)Si substrates
作者:
Jihyun Paek
;
a
;
j_paek@nuee.nagoya-u.ac.jp"" rel=""nofollow
;
Masahito Yamaguchi
a
;
Hiroshi Amano
a
关键词:
A1. Nanostructures
;
A1. Nanowires
;
A1. Heterostructure
;
A3. Molecular beam epitaxy
;
A3. Catalyst free
;
B2.
Semiconducting
gallium arsenide
刊名:Journal of Crystal Growth
出版年:2011
9.
Thermodynamics of the Al
x2013
;Ga
x2013
;N
2
system
作者:
Andrey Belousov
;
J. Karpinski
;
B. Batlogg
关键词:
A1. Phase diagrams
;
A1. Thermodynamics
;
B1. AlGaN
;
B2.
Semiconducting
III
x2013
;
V materials
刊名:Journal of Crystal Growth
出版年:2010
10.
Role of 3C-SiC intermediate layers for
III
-nitride crystal growth on Si
作者:
Yoshihisa Abe
a
;
b
;
abeyoshi@covalenta.co.jp
;
Noriko Ohmori
a
;
Arata Watanabe
b
;
Jun Komiyama
a
;
Syunichi Suzuki
a
;
Hiroyuki Fujimori
a
;
Hideo Nakanishi
a
;
Takashi Egawa
b
关键词:
A1. Crystal structure
;
A3. Metal
x2013
;
organic chemical vapor deposition
;
B1. Nitrides
;
B1.
Semiconducting
III
x2013
;
V materials
;
B1.
Semiconducting
silicon compounds
刊名:Journal of Crystal Growth
出版年:2011
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