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中国地质文献-英文(3)	SpringerLink电子期刊(365)	GSW全文库(9)
Wiley电子期刊(8)	ProQuest学位论文(58)	Elsevier电子期刊(745)
Springer电子图书(1)	NATURE电子期刊(9)	ACS电子期刊(125)

在“Elsevier电子期刊”中，命中：745条，耗时：0.0269897 秒

在所有数据库中总计命中：1,323条

1.Extending the application of DSAM to atypical stopping media

作者：S. Das^a ; S. Samanta^a ; R. Bhattacharjee^a ; R. Raut^a ; ^{rraut@alpha.iuc.res.in" class="auth_mail" title="E-mail the corresponding author} ; S.S. Ghugre^a ; A.K. Sinha^b ; U. Garg^c ; R. Chakrabarti^d ; S. Mukhopadhyay^d ; A. Dhal^e ; M. Kumar Raju^e ; N. Madhavan^e ; S. Muralithar^e ; R.P. Singh^e ; K. Suryanarayana^f ; P.V. Madhusudhana Rao^f ; R. Palit^g ; S. Saha^g ; J. Sethi^g

关键词：Lifetime ; DSAM ; TRIM ; PACE

刊名：Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

出版年：2017

2.Stopping contagion with bailouts: Micro-evidence from Pennsylvania bank networks during the panic of 1884

作者：Haelim Park Anderson^a ; ^{Haelim.Anderson@ofr.treasury.gov} ; John C. Bluedorn^b ; ^{jbluedorn@imf.org}

关键词：Financial networks ; Contagion ; Systemic risk ; Systemically important banks (SIBs) ; Banking crisis ; Bailout ; Liquidity provision ; New York Clearing House ; Panic of 1884

刊名：Journal of Banking & Finance

出版年：2017

3.Two methods of tuning threshold voltage of bulk FinFETs with replacement high-k metal-gate stacks

作者：Miao Xu^a ; ^b ; Huilong Zhu^a ; ^{zhuhuilong@ime.ac.cn} ; Yanbo Zhang^a ; ^{zhangyanbo@ime.ac.cn} ; Qiuxia Xu^a ; Yongkui Zhang^a ; Changliang Qin^a ; ^b ; Qingzhu Zhang^a ; ^b ; Huaxiang Yin^a ; ^b ; Hao Xu^a ; ^b ; Shuai Chen^a ; Jun Luo^a ; ^b ; Chunlong Li^a ; Chao Zhao^a ; ^b ; Tianchun Ye^a ; ^b

关键词：FinFET ; Halo ; Work function ; Punch through stop pocket ; Threshold voltage ; High k metal gate

刊名：Solid-State Electronics

出版年：2017

4.Reusable macroporous photonic crystal-based ethanol vapor detectors by doctor blade coating

作者：Ya-Ling Ko^a ; Hui-Ping Tsai^b ; Kun-Yi Lin^c ; Ying-Chu Chen^a ; Hongta Yang^a ; ^{hyang@dragon.nchu.edu.tw" class="auth_mail" title="E-mail the corresponding author}

关键词：Reusable ; Photonic crystals ; Self-assembly ; Bragg diffraction ; Vapor detection

刊名：Journal of Colloid and Interface Science

出版年：2017

5.Evolution of dispatchable photovoltaic system integration with the electric power network for smart grid applications: A review

作者：Michael Emmanuel ; ^{michael.emmanuel@ecs.vuw.ac.nz" class="auth_mail" title="E-mail the corresponding author} ; Ramesh Rayudu

关键词：Dispatchable ; PV integration ; Plug-and-play ; Microgrids

刊名：Renewable and Sustainable Energy Reviews

出版年：2017

6.The Distributed Nature of Working Memory

作者：Thomas B. Christophel¹ ; ² ; ³ ; ¹² ; ^{tbchristophel@gmail.com} ; P. Christiaan Klink⁴ ; ⁵ ; ⁶ ; ¹² ; Bernhard Spitzer⁷ ; Pieter R. Roelfsema⁵ ; ⁶ ; ⁸ ; ¹² ; John-Dylan Haynes¹ ; ² ; ³ ; ⁹ ; ¹⁰ ; ¹¹ ; ¹²

刊名：Trends in Cognitive Sciences

出版年：2017

7.Electrostatic Stabilization Plays a Central Role in Autoinhibitory Regulation of the Na⁺,K⁺-ATPase

作者：Qiucen Jiang¹ ; Alvaro Garcia² ; ³ ; Minwoo Han⁴ ; Flemming Cornelius⁵ ; Hans-Jü ; rgen Apell⁶ ; Himanshu Khandelia⁴ ; Ronald J. Clarke² ; ^{ronald.clarke@sydney.edu.au}

刊名：Biophysical Journal

出版年：2017

8.IT2Rail: Information Technologies for Shift to Rail

作者：Stefanos Gogos^a ; ^{stefanos.gogos@unife.org" class="auth_mail" title="E-mail the corresponding author} ; Xavier Letellier^b

关键词：Seamless travel ; Technical Enabler ; interoperability framework ; one-stop shop ; ticketing

刊名：Transportation Research Procedia

出版年：2016

9.Investigating degradation behavior of hole-trapping effect under static and dynamic gate-bias stress in a dual gate a-InGaZnO thin film transistor with etch stop layer

作者：Po-Yung Liao^a ; Ting-Chang Chang^a ; ^b ; ^{tcchang3708@gmail.com" class="auth_mail" title="E-mail the corresponding author} ; Tien-Yu Hsieh^a ; Ming-Yen Tsai^c ; Bo-Wei Chen^c ; Ann-Kuo Chu^c ; Cheng-Hsu Chou^d ; Jung-Fang Chang^d

关键词：Indium&ndash ; gallium&ndash ; zinc oxide ; Dual gate thin film transistors ; Etch stop layer ; Negative gate bias illumination stress

刊名：Thin Solid Films

出版年：2016

10.Device characteristics of amorphous indium-gallium-zinc-oxide channel capped with silicon oxide passivation layers

作者：Geon Jang^a ; Su Jeong Lee^a ; Yun Cheol Kim^a ; Sang Hoon Lee^a ; Pranab Biswas^a ; Woong Lee^b ; ^{woonglee@changwon.ac.kr" class="auth_mail" title="E-mail the corresponding author} ; Jae-Min Myoung^a ; ^{jmmyoung@yonsei.ac.kr" class="auth_mail" title="E-mail the corresponding author}

关键词：a-IGZO TFT ; SiO2 passivation layer ; Plasma damage ; Etch stop layer-free ; RF magnetron sputtering

刊名：Materials Science in Semiconductor Processing

出版年：2016

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