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Elsevier电子期刊(6)
在“
Elsevier电子期刊
”中,
命中:
6
条,耗时:0.0339907 秒
在所有数据库中总计命中:
6
条
1.
Atom probe tomography evidence for uniform incorporation of Bi across the growth front in GaAs
1−
x
Bi
x
/GaAs superlattice
作者:
Weixin Chen
a
;
wchen254@wisc.edu" class="auth_mail" title="E-mail the corresponding author
;
Paul A. Ronsheim
b
;
Adam W. Wood
a
;
Kamran Forghani
c
;
Yingxin Guan
a
;
Thomas
F. Kuech
a
;
c
;
Susan E. Babcock
a
关键词:
A1. Characterization
;
A1. Atom probe tomography
;
A3. Metalorganic vapor phase epitaxy
;
A3. Superlattices
;
B1. Bismuth compounds
;
B2. Semiconducting III&ndash
;
V materials
刊名:Journal of Crystal Growth
出版年:2016
2.
Pulmonary perfusion imaging: Qualitative comparison of TCIR MRI and SPECT/CT in porcine lung
作者:
Thomas
Gaass
a
;
b
;
c
;
thomas
.
gaass
@med.uni-muenchen.de" class="auth_mail" title="E-mail the corresponding author
;
Grzegorz Bauman
c
;
d
;
Jü
;
rgen Biederer
f
;
Christian Hintze
e
;
f
;
Moritz Schneider
a
;
Julien Dinkel
a
;
b
;
e
关键词:
Animal experimentation
;
Magnetic resonance imaging
;
Lung
;
Blood volume
刊名:European Journal of Radiology
出版年:2015
3.
Self-limiting growth when using trimethyl bismuth (TMBi) in the metal-organic vapor phase epitaxy (MOVPE) of GaAs
1鈭?span style='font-style: italic'>y
Bi
y
作者:
Kamran Forghani
a
;
b
;
forghani@wisc.edu" class="auth_mail
;
Yingxin Guan
c
;
Adam W. Wood
c
;
Amita Anand
d
;
Susan E. Babcock
c
;
Luke J. Mawst
d
;
Thomas
F. Kuech
b
关键词:
A1. High resolution x-ray diffraction
;
A3. Metalorganic vapor phase epitaxy
;
B1. Bismuth compounds
;
B2. Semiconducting III&ndash
;
V materials
;
B2. Semiconducting ternary compounds
;
B2. Semiconducting gallium arsenide
刊名:Journal of Crystal Growth
出版年:1 June 2014
4.
Rapid dynamic radial MRI via reference image enforced histogram constrained reconstruction
作者:
Thomas
Gaass
a
;
t.
gaass
@tum.de" class="auth_mail
;
Grzegorz Bauman
b
;
Guillaume Potdevin
c
;
Peter B. Noë
;
l
d
;
Axel Haase
a
关键词:
Non-Cartesian
;
Iterative reconstruction
;
Undersampling
;
Histogram entropy
;
Dynamic MRI
刊名:Journal of Magnetic Resonance
出版年:March, 2014
5.
Low temperature growth of GaAs
1?
y
Bi
y
epitaxial layers
作者:
Kamran Forghani
;
Amita An
;
Luke J. Mawst
;
Thomas
F. Kuech
关键词:
A1. High resolution X-ray diffraction
;
A3. Metalorganic vapor phase epitaxy
;
B1. Bismuth compounds
;
B2. Semiconducting III&ndash
;
V materials
;
B2. Semiconducting ternary compounds
;
B2. Semiconducting Gallium Arsenide
刊名:Journal of Crystal Growth
出版年:2013
6.
Molecular beam epitaxial growth and characterization of InP/
GaAsS
b/InP double heterojunction bipolar transistors
作者:
Rajavel
;
R.D.
;
Hussain
;
T.
;
Montes
;
M.C.
;
Sawins
;
M.W.
;
Thomas
III
;
S.
;
Chow
;
D.H.
关键词:
81.15.Hi
;
85.30.Pq
;
81.05.Ea
;
A3.Molecular beam epitaxy
;
B1.
GaAsS
b
;
B1.InP
;
B3.Bipolar transistors
刊名:Journal of Crystal Growth
出版年:2003
1
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2027年及以后(1)
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2015年(1)
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2000年及以前(1)
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