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内部出版物
Wiley电子期刊(3)
SpringerLink电子期刊(8)
NATURE电子期刊(3)
Elsevier电子期刊(21)
在“
Elsevier电子期刊
”中,
命中:
21
条,耗时:0.0159967 秒
在所有数据库中总计命中:
35
条
1.
Measurement forecast of anomalous
threshold
voltage
s in BCD LV submicron n-MOSFETs with two artificial intelligence methods
作者:
Shen-Li Chen
;
jackchen@nuu.edu.tw
;
Dun-Ying Shu
关键词:
Bipolar-CMOS-DMOS (BCD)
;
Fuzzy-neural network (FNN)
;
Grey system (GS)
;
Low-
voltage
(LV)
;
Threshold
voltage
(
Vth
)
刊名:Measurement
出版年:2017
2.
Two methods of tuning
threshold
voltage
of bulk FinFETs with replacement high-k metal-gate stacks
作者:
Miao Xu
a
;
b
;
Huilong Zhu
a
;
zhuhuilong@ime.ac.cn
;
Yanbo Zhang
a
;
zhangyanbo@ime.ac.cn
;
Qiuxia Xu
a
;
Yongkui Zhang
a
;
Changliang Qin
a
;
b
;
Qingzhu Zhang
a
;
b
;
Huaxiang Yin
a
;
b
;
Hao Xu
a
;
b
;
Shuai Chen
a
;
Jun Luo
a
;
b
;
Chunlong Li
a
;
Chao Zhao
a
;
b
;
Tianchun Ye
a
;
b
关键词:
FinFET
;
Halo
;
Work function
;
Punch through stop pocket
;
Threshold
voltage
;
High k metal gate
刊名:Solid-State Electronics
出版年:2017
3.
Electrical properties of carbon-nanotube-network transistors in air after gamma irradiation
作者:
Satoshi Ishii
a
;
s.ishii@mail.dendai.ac.jp
;
Daisuke Yabe
b
;
Shotaro Enomoto
b
;
Shigeru Koshio
c
;
Teruaki Konishi
d
;
Tsuyoshi Hamano
d
;
Toshio Hirao
c
关键词:
Carbon nanotube network transistor
;
Gamma ray
;
Threshold
voltage
shift
刊名:Physica E: Low-dimensional Systems and Nanostructures
出版年:2017
4.
Memory switching and the switching mechanism of Se
60
Ge
40
and Se
60
Ge
36
In
4
phase change alloys
作者:
A.M. Shakra
;
amshakra@yahoo.com
关键词:
Chalcogenide semiconductor
;
Memory switching
;
Electrothermal model
;
Effect of In addition to SeGe composition
刊名:Journal of Alloys and Compounds
出版年:2017
5.
Reliability of Diode-Integrated SiC Power MOSFET(DioMOS)
作者:
Osamu Kusumoto
;
kusumoto.osamu@jp.panasonic.com" class="auth_mail" title="E-mail the corresponding author
;
Atsushi Ohoka
;
Nobuyuki Horikawa
;
Kohtaro Tanaka
;
Masahiko Niwayama
;
Masao Uchida
;
Yoshihiko Kanzawa
;
Kazuyuki Sawada
;
Tetsuzo Ueda
关键词:
Silicon carbide (SiC)
;
Diode-integrated MOS (DioMOS)
;
Threshold
voltage
;
Gate oxide
;
Channel diode
;
HTGB
;
HTRB
刊名:Microelectronics Reliability
出版年:2016
6.
Origin of positive
Vth
shift and mobility effects in amorphous GaInZnO thin films
作者:
Sung Heo
a
;
1
;
Dongwha Lee
b
;
1
;
Yong Koo Kyoung
a
;
Young-Nam Kwon
a
;
KiHong Kim
a
;
JaeGwan Chung
a
;
Jae Cheol Lee
a
;
Gyeong Su Park
a
;
Jong Soo Oh
b
;
Dahlang Tahir
c
;
Hee Jae Kang
d
;
Hoon Young Cho
b
;
hycho@dongguk.edu" class="auth_mail" title="E-mail the corresponding author
关键词:
Ga-In-Zn-O
;
Band alignment
;
Vth
shift
;
Band bap
;
XPS
;
REELS
刊名:Thin Solid Films
出版年:2016
7.
Investigation into sand mura effects of a-IGZO TFT LCDs
作者:
Xiang Liu
a
;
b
;
skeyapple@126.com" class="auth_mail" title="E-mail the corresponding author
;
Hehe Hu
b
;
Ce Ning
b
;
Guangliang Shang
b
;
Wei Yang
b
;
Ke Wang
b
;
Xinhong Lu
b
;
Woobong Lee
b
;
Gang Wang
b
;
Jianshe Xue
b
;
Jung mok Jun
b
;
Shengdong Zhang
a
关键词:
a-IGZO TFTs
;
LCD reliability test
;
Sand mura
;
Threshold
voltage
shift
;
Positive
;
Thermal gate bias stress
刊名:Microelectronics Reliability
出版年:2016
8.
Analytical parameter extraction for NBTI reaction diffusion and trapping/detrapping models
作者:
YanLing Wang
a
;
XiaoJin Li
a
;
xjli@ee.ecnu.edu.cn
;
Jian Qing
a
;
Yan Zeng
a
;
YanLing Shi
a
;
Ao Guo
b
;
ShaoJian Hu
b
;
Shoumian Chen
b
;
Yuhang Zhao
b
关键词:
Negative bias temperature instability (NBTI)
;
Reaction-diffusion (R-D) model
;
Trapping/detrapping (T/D) model
;
Parameter extraction
;
Genetic algorithm
;
Coordinate system conversion
刊名:Microelectronics Reliability
出版年:2016
9.
Degradation and recovery of variability due to BTI
作者:
Christian Schlü
;
nder
a
;
christian.schluender@infineon.com" class="auth_mail" title="E-mail the corresponding author
;
Jö
;
rg Berthold
b
;
Fabian Proebster
a
;
Andreas Martin
a
;
Wolfgang Gustin
a
;
Hans Reisinger
a
关键词:
BTI
;
NBTI
;
Variability
;
Degradation
;
Recovery
;
Geometry
;
Vth
;
Sigma
刊名:Microelectronics Reliability
出版年:2016
10.
Low magnetic field Impact on NBTI degradation
作者:
S.M. Merah
a
;
B. Nadji
a
;
b_nadji@yahoo.com" class="auth_mail" title="E-mail the corresponding author
;
bnadji@umbb.dz" class="auth_mail" title="E-mail the corresponding author
;
H. Tahi
b
关键词:
NBTI
;
VDMOSFET
;
Magnetic field
刊名:Microelectronics Reliability
出版年:2015
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