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Wiley电子期刊(11)
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Elsevier电子期刊(1290)
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NATURE电子期刊(36)
ACS电子期刊(96)
在“
Elsevier电子期刊
”中,
命中:
1,290
条,耗时:0.0529733 秒
在所有数据库中总计命中:
1,591
条
1.
Microstructure and texture evolution of
ultra
-
thin
grain-oriented
silicon
steel sheet fabricated using strip casting and three-stage cold rolling method
作者:
Hong-Yu Song
;
Hai-Tao Liu
;
liuht@ral.neu.edu.cn
;
Yin-Ping Wang
;
Guo-Dong Wang
关键词:
Strip casting
;
Ultra
-
thin
grain-oriented
silicon
steel
;
Microstructure
;
Goss texture
;
Inhibitor
;
Secondary recrystallization
刊名:Journal of Magnetism and Magnetic Materials
出版年:2017
2.
Behavior of copper contamination on backside damage for
ultra
-
thin
silicon
three dimensional stacking structure
作者:
Yoriko Mizushima
a
;
b
;
mizushima.y.aa@m.titech.ac.jp
;
Youngsuk Kim
a
;
c
;
Tomoji Nakamura
b
;
Akira Uedono
d
;
Takayuki Ohba
a
关键词:
3D integration
;
Wafer-on-wafer
;
Ultra
-
thin
ning
;
Grinding damage
;
Cu contamination
;
Positron annihilation
刊名:Microelectronic Engineering
出版年:2017
3.
Ultra
-
thin
silicon
oxide layers on crystalline
silicon
wafers: Comparison of advanced oxidation techniques with respect to chemically abrupt SiO
2
/Si interfaces with low defect densities
作者:
Bert Stegemann
a
;
bert.stegemann@htw-berlin.de
;
Karim M. Gad
b
;
Patrice Balamou
a
;
c
;
Daniel Sixtensson
c
;
Daniel Vö
;
ssing
b
;
Martin Kasemann
b
;
Heike Angermann
c
关键词:
Silicon
oxide
;
Tunnel oxide
;
Surface photo voltage measurement
;
Photoemission
;
Interface state density
;
Rapid thermal oxidation
;
Wet-chemical oxidation
;
Oxidation states
刊名:Applied Surface Science
出版年:2017
4.
Characterization and modelling of layout effects in SiGe channel pMOSFETs from 14 nm UTBB FDSOI technology
作者:
R. Berthelon
a
;
b
;
c
;
remy.berthelon@st.com
;
F. Andrieu
b
;
francois.andrieu@cea.fr
;
S. Ortolland
a
;
R. Nicolas
a
;
T. Poiroux
b
;
E. Baylac
a
;
D. Dutartre
a
;
E. Josse
a
;
A. Claverie
c
;
M. Haond
a
关键词:
CMOS
;
Ultra
-
Thin
-Body and Buried-Oxide Fully-Depleted-On-Insulator (UTBB FDSOI)
;
SiGe
;
Stress
;
Strain
;
Layout effects
;
Length of diffusion (LOD)
;
SA/SB parameters
;
Threshold voltage
;
Mobility
刊名:Solid-State Electronics
出版年:2017
5.
An in-depth analysis of temperature effect on DIBL in UTBB FD SOI MOSFETs based on experimental data, numerical simulations and analytical models
作者:
A.S.N. Pereira
a
;
b
;
ariannesoares@fei.edu.br
;
G. de Streel
a
;
N. Planes
c
;
M. Haond
c
;
R. Giacomini
b
;
D. Flandre
a
;
V. Kilchytska
a
关键词:
Fully-Depleted
Silicon
-On-Insulator (FD SOI)
;
UTBB
;
DIBL
;
Temperature dependence
刊名:Solid-State Electronics
出版年:2017
6.
Study of fin tapering effect in nanoscale symmetric dual-k spacer (SDS) hybrid FinFETs
作者:
K.P. Pradhan
;
k.p.pradhan@ieee.org" class="auth_mail" title="E-mail the corresponding author
;
Priyanka
priyankarajputnit@gmail.com" class="auth_mail" title="E-mail the corresponding author
;
P.K. Sahu
pksahu@nitrkl.ac.in" class="auth_mail" title="E-mail the corresponding author
关键词:
Hybrid FinFETs
;
Dual-k spacer
;
Tapered trigate FinFETs
;
Fin angle
;
Fin height
;
Short channel effects (SCEs)
刊名:Materials Science in Semiconductor Processing
出版年:2017
7.
Ultra
-
Thin
Silicon
based Piezoelectric Capacitive Tactile Sensor
作者:
Shoubhik Gupta
a
;
b
;
Flavio Giacomozzi
b
;
Hadi Heidari
a
;
Leandro Lorenzelli
b
;
Ravinder Dahiya
a
;
Ravinder.Dahiya@glasgow.ac.uk
关键词:
Flexible Electronics
;
Tactile Sensor
;
Micro-Machining
;
Ultra
-
Thin
Chips
刊名:Procedia Engineering
出版年:2016
8.
A review of special gate coupling effects in long-channel SOI MOSFETs with lightly doped
ultra
-
thin
bodies and their compact analytical modeling
作者:
T. Rudenko
a
;
tamara@lab15.kiev.ua" class="auth_mail" title="E-mail the corresponding author
;
A. Nazarov
a
;
V. Kilchytska
b
;
D. Flandre
b
关键词:
Silicon
-on-insulator (SOI)
;
Fully-depleted SOI transistor
;
Gate coupling
;
Ultra
-
thin
-body SOI transistors
;
Threshold voltage
;
Quantum-mechanical effects
刊名:Solid State Electronics
出版年:2016
9.
Role of SiO
x
N
y
surface passivation layer on stability improvement and kink effect reduction of ELA poly
silicon
thin
film transistors
作者:
Thanh Thuy Trinh
a
;
b
;
Kyungsoo Jang
a
;
Van Duy Nguyen
a
;
c
;
Vinh Ai Dao
a
;
d
;
daovinhai@skku.edu" class="auth_mail" title="E-mail the corresponding author
;
Junsin Yi
a
;
yi@yurim.skku.ac.kr" class="auth_mail" title="E-mail the corresponding author
关键词:
Thin
film transistor
;
NH3 and N2O plasma
;
SiOxNy
ultra
-
thin
layer
;
ELA poly-
silicon
;
Kink effect reduction
刊名:Microelectronic Engineering
出版年:2016
10.
Mismatched front and back gratings for optimum light trapping in
ultra
-
thin
crystalline
silicon
solar cells
作者:
Wei-Chun Hsu
a
;
Jonathan K. Tong
a
;
Matthew S. Branham
a
;
Yi Huang
a
;
Selç
;
uk Yerci
a
;
b
;
Svetlana V. Boriskina
a
;
sborisk@mit.edu" class="auth_mail" title="E-mail the corresponding author
;
Gang Chen
a
;
gchen2@mit.edu" class="auth_mail" title="E-mail the corresponding author
关键词:
Light trapping
;
Double grating
;
Crystalline
silicon
;
Solar cell
;
Thin
absorber
刊名:Optics Communications
出版年:2016
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