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Elsevier电子期刊(59)
在“
Elsevier电子期刊
”中,
命中:
59
条,耗时:小于0.01 秒
在所有数据库中总计命中:
59
条
1.
Underlap
ped FinFET on insulator: Quasi3D analytical model
作者:
Vandana Kumari
a
;
vandanakumari511@gmail.com
;
K. Sharmetha
b
;
sharmetha208@gmail.com
;
Manoj Saxena
c
;
saxena_manoj77@yahoo.co.in
;
Mridula Gupta
d
;
mridula@south.du.ac.in
关键词:
FinFET
;
ATLAS
;
Underlap
;
3D modeling
刊名:Solid-State Electronics
出版年:2017
2.
Effect of spacer dielectric engineering on Asymmetric Source
Underlap
ped Double Gate MOSFET using Gate Stack
作者:
Ankush Chattopadhyay
b
;
Arpan Dasgupta
b
;
arpan24470367@gmail.com
;
Rahul Das
b
;
Atanu Kundu
a
;
Chandan K. Sarkar
b
关键词:
Source
underlap
;
Gate Stack
;
Analog and RF analysis
;
Non Quasi Static
;
Single stage amplifier
刊名:Superlattices and Microstructures
出版年:2017
3.
A two-dimensional (2D) analytical subthreshold swing and transconductance model of
underlap
dual-material double-gate (DMDG) MOSFET for analog/RF applications
作者:
Vadthiya Narendar
;
vadthiya@mnnit.ac.in
;
Saurabh Rai
;
Siddharth Tiwari
;
R.A. Mishra
关键词:
Analog/RF parameters
;
Dual-metal double-gate (DMDG)
;
Short channel effects (SCEs)
;
Subthreshold swing (SS)
;
Transconductance (gm)
;
Underlap
刊名:Superlattices and Microstructures
出版年:2016
4.
The effect of fabric structure on the mechanical properties of warp knitted surgical mesh for hernia repair
作者:
Mohammad Mirjavan
;
Azita Asayesh
;
a_asayesh@aut.ac.ir
;
Ali Asghar Asgharian Jeddi
关键词:
Surgical mesh
;
Warp knitted
;
Fabric structure
;
Polypropylene
;
Mechanical properties
;
Elastic modulus
刊名:Journal of the Mechanical Behavior of Biomedical Materials
出版年:2017
5.
Study of G-S/D
underlap
for enhanced analog performance and RF/circuit analysis of UTB InAs-OI-Si MOSFET using NQS small signal model
刊名:Superlattices and Microstructures
出版年:2017
6.
Improving the subthreshold performance of junctionless transistor using spacer engineering
作者:
Gaurav Saini
;
gauravsaini@nitkkr.ac.in
;
Sudhanshu Choudhary
关键词:
Dual-k spacer
;
Intrinsic delay
;
JLT
;
SCEs
刊名:Microelectronics Journal
出版年:2017
7.
Ferroelectric Schottky barrier tunnel FET with gate-drain
underlap
: Proposal and investigation
作者:
Sumit Kale
;
sumit.kale@iiitdmj.ac.in" class="auth_mail" title="E-mail the corresponding author
;
P.N. Kondekar
pnkondekar@iiitdmj.ac.in" class="auth_mail" title="E-mail the corresponding author
关键词:
Schottky barrier
;
Ferroelectric gate stack
;
Underlap
;
Tunneling barrier width
;
Ambipolar leakage current
刊名:Superlattices and Microstructures
出版年:2016
8.
Dielectric engineered symmetric
underlap
double gate tunnel FET (DGTFET): An investigation towards variation of dielectric materials
作者:
Mallikarjunarao
mallikarjunarao524@gmail.com" class="auth_mail" title="E-mail the corresponding author
;
Rajeev Ranjan
rajeevranjan212@gmail.com" class="auth_mail" title="E-mail the corresponding author
;
K.P. Pradhan
;
kp2.etc@gmail.com" class="auth_mail" title="E-mail the corresponding author
;
P.K. Sahu
pksahu@nitrkl.ac.in" class="auth_mail" title="E-mail the corresponding author
关键词:
Band-to-Band Tunneling
;
Underlap
length
;
Single-k spacer
;
Sub-threshold swing
刊名:Superlattices and Microstructures
出版年:2016
9.
Influence of
Underlap
on Gate Stack DG-MOSFET for analytical study of Analog/RF performance
作者:
Atanu Kundu
a
;
kundu.atanu@gmail.com" class="auth_mail" title="E-mail the corresponding author
;
Arpan Dasgupta
a
;
Rahul Das
a
;
Shramana Chakraborty
a
;
Arka Dutta
b
;
Chandan K. Sarkar
b
关键词:
Underlap
;
Gate stack
;
Non quasi static approach
;
Analog & RF performance of DG NMOSFET
刊名:Superlattices and Microstructures
出版年:2016
10.
Impactful study of dual work function,
underlap
and hetero gate dielectric on TFET with different drain doping profile for high frequency performance estimation and optimization
作者:
Dharmendra Singh Yadav
;
tech.dharmendra26@gmail.com" class="auth_mail" title="E-mail the corresponding author
;
Dheeraj Sharma
dheeraj24482@gmail.com" class="auth_mail" title="E-mail the corresponding author
;
Bhagwan Ram Raad
bhagwanramraad@gmail.com" class="auth_mail" title="E-mail the corresponding author
;
Varun Bajaj
bajajvarun056@yahoo.co.in" class="auth_mail" title="E-mail the corresponding author
关键词:
Band to band tunneling
;
Dual material gate
;
Source pocket
;
Gate
underlap
;
Hetero gate dielectric
刊名:Superlattices and Microstructures
出版年:2016
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