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Elsevier电子期刊(191)
在“
Elsevier电子期刊
”中,
命中:
191
条,耗时:小于0.01 秒
在所有数据库中总计命中:
191
条
1.
Measurement forecast of anomalous threshold voltages in BCD LV submicron n-MOSFETs with two artificial intelligence methods
作者:
Shen-Li Chen
;
jackchen@nuu.edu.tw
;
Dun-Ying Shu
关键词:
Bipolar-CMOS-DMOS (BCD)
;
Fuzzy-neural network (FNN)
;
Grey system (GS)
;
Low-voltage (LV)
;
Threshold voltage (
Vth
)
刊名:Measurement
出版年:2017
2.
Achievement of normally-off AlGaN/GaN high-electron mobility transistor with p-NiO
x
capping layer by sputtering and post-annealing
作者:
Shyh-Jer Huang
a
;
Cheng-Wei Chou
a
;
j2222222229@gmail.com
;
Yan-Kuin Su
a
;
yksu@mail.ncku.edu.tw
;
Jyun-Hao Lin
a
;
Hsin-Chieh Yu
a
;
De-Long Chen
a
;
Jian-Long Ruan
b
关键词:
HEMTs
;
Gallium nitride
;
Enhancement mode
;
Sputter
;
p-NiOx
刊名:Applied Surface Science
出版年:2017
3.
Electrical properties of carbon-nanotube-network transistors in air after gamma irradiation
作者:
Satoshi Ishii
a
;
s.ishii@mail.dendai.ac.jp
;
Daisuke Yabe
b
;
Shotaro Enomoto
b
;
Shigeru Koshio
c
;
Teruaki Konishi
d
;
Tsuyoshi Hamano
d
;
Toshio Hirao
c
关键词:
Carbon nanotube network transistor
;
Gamma ray
;
Threshold voltage shift
刊名:Physica E: Low-dimensional Systems and Nanostructures
出版年:2017
4.
Two methods of tuning threshold voltage of bulk FinFETs with replacement high-k metal-gate stacks
作者:
Miao Xu
a
;
b
;
Huilong Zhu
a
;
zhuhuilong@ime.ac.cn
;
Yanbo Zhang
a
;
zhangyanbo@ime.ac.cn
;
Qiuxia Xu
a
;
Yongkui Zhang
a
;
Changliang Qin
a
;
b
;
Qingzhu Zhang
a
;
b
;
Huaxiang Yin
a
;
b
;
Hao Xu
a
;
b
;
Shuai Chen
a
;
Jun Luo
a
;
b
;
Chunlong Li
a
;
Chao Zhao
a
;
b
;
Tianchun Ye
a
;
b
关键词:
FinFET
;
Halo
;
Work function
;
Punch through stop pocket
;
Threshold voltage
;
High k metal gate
刊名:Solid-State Electronics
出版年:2017
5.
Aging comparative analysis of high-performance FinFET and CMOS flip-flops
作者:
Shiva Taghipour
;
taghipoor_shiva@yahoo.com
;
Rahebeh Niaraki Asli
niaraki@guilan.ac.ir
关键词:
Aging effect
;
Bias Temperature Instability (BTI)
;
FinFET
;
Flip-flop
;
Hot Carrier Injection (HCI)
刊名:Microelectronics Reliability
出版年:2017
6.
Memory switching and the switching mechanism of Se
60
Ge
40
and Se
60
Ge
36
In
4
phase change alloys
作者:
A.M. Shakra
;
amshakra@yahoo.com
关键词:
Chalcogenide semiconductor
;
Memory switching
;
Electrothermal model
;
Effect of In addition to SeGe composition
刊名:Journal of Alloys and Compounds
出版年:2017
7.
Impact of series resistance on the operation of junctionless transistors
作者:
Dae-Young Jeon
a
;
c
;
dyjeon@kist.re.kr
;
So Jeong Park
a
;
c
;
Mireille Mouis
a
;
Sylvain Barraud
b
;
Gyu-Tae Kim
c
;
gtkim@korea.ac.kr
;
Gé
;
rard Ghibaudo
a
;
ghibaudo@minatec.inpg.fr
关键词:
Junctionless transistors (JLTs)
;
Bulk neutral conduction
;
Series resistance (Rsd)
;
Analytical modeling
;
De-embedded Rsd effects
刊名:Solid-State Electronics
出版年:2017
8.
Origin of positive
Vth
shift and mobility effects in amorphous GaInZnO thin films
作者:
Sung Heo
a
;
1
;
Dongwha Lee
b
;
1
;
Yong Koo Kyoung
a
;
Young-Nam Kwon
a
;
KiHong Kim
a
;
JaeGwan Chung
a
;
Jae Cheol Lee
a
;
Gyeong Su Park
a
;
Jong Soo Oh
b
;
Dahlang Tahir
c
;
Hee Jae Kang
d
;
Hoon Young Cho
b
;
hycho@dongguk.edu" class="auth_mail" title="E-mail the corresponding author
关键词:
Ga-In-Zn-O
;
Band alignment
;
Vth
shift
;
Band bap
;
XPS
;
REELS
刊名:Thin Solid Films
出版年:2016
9.
Degradation and recovery of variability due to BTI
作者:
Christian Schlü
;
nder
a
;
christian.schluender@infineon.com" class="auth_mail" title="E-mail the corresponding author
;
Jö
;
rg Berthold
b
;
Fabian Proebster
a
;
Andreas Martin
a
;
Wolfgang Gustin
a
;
Hans Reisinger
a
关键词:
BTI
;
NBTI
;
Variability
;
Degradation
;
Recovery
;
Geometry
;
Vth
;
Sigma
刊名:Microelectronics Reliability
出版年:2016
10.
Analytical parameter extraction for NBTI reaction diffusion and trapping/detrapping models
作者:
YanLing Wang
a
;
XiaoJin Li
a
;
xjli@ee.ecnu.edu.cn
;
Jian Qing
a
;
Yan Zeng
a
;
YanLing Shi
a
;
Ao Guo
b
;
ShaoJian Hu
b
;
Shoumian Chen
b
;
Yuhang Zhao
b
关键词:
Negative bias temperature instability (NBTI)
;
Reaction-diffusion (R-D) model
;
Trapping/detrapping (T/D) model
;
Parameter extraction
;
Genetic algorithm
;
Coordinate system conversion
刊名:Microelectronics Reliability
出版年:2016
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