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在“
Elsevier电子期刊
”中,
命中:
1,072
条,耗时:0.1259111 秒
在所有数据库中总计命中:
1,362
条
1.
Current transport and
deep
level
s in p-Si/n-Zn
0.9
Mg
0.1
O/n-ZnO heterojunction
作者:
K.M. Paradowska
a
;
karolina.paradowska@pwr.edu.pl" class="auth_mail" title="E-mail the corresponding author
;
E. Płaczek-Popko
a
;
M.A. Pietrzyk
b
;
K. Gwó
;
źdź
a
;
A. Kozanecki
b
关键词:
Zinc oxide
;
Deep
level
transient spectroscopy
;
Current transport
;
Deep
level
s
刊名:Journal of Alloys and Compounds
出版年:2017
2.
Tailoring the
defects
and carrier density for beyond 10% efficient CZTSe thin film solar cells
作者:
Jianjun Li
a
;
SeongYeon Kim
b
;
Dahyun Nam
c
;
Xiaoru Liu
a
;
JunHo Kim
b
;
Hyeonsik Cheong
c
;
Wei Liu
a
;
Hui Li
d
;
Yun Sun
a
;
Yi Zhang
a
;
关键词:
CZTSe solar cell
;
Defects
states
;
Carrier density
;
Admittance spectroscopy
;
Ratio of Zn/Sn
刊名:Solar Energy Materials and Solar Cells
出版年:2017
3.
Apolipoprotein A-I and B and Subjective Global Assessment relationship can reflect lipid
defects
in diabetic retinopathy
作者:
Yashodhara Sharma
;
M.Sc.
a
;
San
deep
Saxena
;
M.S.
;
F.R.C.S.Ed.
;
F.R.C.S.
;
F.R.C.Ophth.
;
F.A.I.C.O.
a
;
san
deep
saxena2020@yahoo.com
;
Arvind Mishra
;
M.D.
b
;
Anita Saxena
;
M.D.
;
Ph.D.
c
;
Shankar Madhav Natu
;
Ph.D.
d
关键词:
Apolipoprotein A-I
;
Apolipoprotein B
;
Subjective Global Assessment scores
;
Nutritional status
;
Diabetic retinopathy
刊名:Nutrition
出版年:2017
4.
A time-resolved current method and TSC under vacuum conditions of SEM: Trapping and detrapping processes in thermal aged XLPE insulation cables
作者:
L. Boukezzi
a
;
S. Rondot
b
;
sebastien.rondot@univ-reims.fr
;
O. Jbara
b
;
A. Boubakeur
c
关键词:
XLPE
;
Thermal aging
;
SEM
;
TSC
;
trapped charge
;
trap depth
刊名:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
出版年:2017
5.
Identification of intrinsic
deep
level
defects
responsible for electret behavior in TlGaSe
2
layered semiconductor
作者:
MirHasan Yu. Seyidov
a
;
b
;
smirhasan@gyte.edu.tr" class="auth_mail" title="E-mail the corresponding author
;
Faik A. Mikailzade
a
;
b
;
Talip Uzun
a
;
Andrei P. Odrinsky
c
;
Emin Yakar
d
;
Vafa B. Aliyeva
b
;
Sardar S. Babayev
b
;
Tofig G. Mammadov
b
关键词:
photo - induced current transient spectroscopy
;
pyroelectric current
;
deep
level
defects
;
incommensurate phase
刊名:Physica B: Physics of Condensed Matter
出版年:2016
6.
Vertically aligned ZnCdS nanowire arrays/P3HT heterojunctions for solar cell applications
作者:
Dong Jin Lee
a
;
G. Mohan Kumar
b
;
gmohankumar@dongguk.edu" class="auth_mail" title="E-mail the corresponding author
;
selvi1382@gmail.com" class="auth_mail" title="E-mail the corresponding author
;
P. Ilanchezhiyan
b
;
Jae-Chul Lee
c
;
Sung Ryong Ryu
d
;
Tae Won Kang
a
;
b
关键词:
Photovoltaics
;
Semiconductors
刊名:Journal of Colloid and Interface Science
出版年:2017
7.
Deep
level
defects
in N-rich and In-rich In
x
Ga
1−X
N: in composition dependence
作者:
Emre Gü
;
r
a
;
emregur@atauni.edu.tr
;
Fatih Akyol
b
;
Sriram Krishnamoorthy
b
;
Siddharth Rajan
b
;
Steven A. Ringel
b
关键词:
InGaN
;
Schottky diode
;
Deep
level
optical spectroscopy (DLOS)
刊名:Superlattices and Microstructures
出版年:2016
8.
Effect of
deep
native
defects
on ultrasound propagation in TlInS
2
layered crystal
作者:
MirHasan Yu. Seyidov
a
;
b
;
smirhasan@gtu.edu.tr" class="auth_mail" title="E-mail the corresponding author
;
Rauf A. Suleymanov
a
;
b
;
Andrei P. Odrinsky
c
;
Cafer Kırbaş
a
;
d
关键词:
Ferroelectric&ndash
;
semiconductors
;
Photo-induced current transient spectroscopy
;
Pulse-echo method
;
Deep
level
defects
;
Velocity of longitudinal and transverse ultrasonic waves
刊名:Physica B: Physics of Condensed Matter
出版年:2016
9.
Electrical characterization of
deep
level
s created by bombarding nitrogen-doped 4H-SiC with alpha-particle irradiation
作者:
Ezekiel Omotoso
a
;
b
;
ezekiel.omotoso@up.ac.za" class="auth_mail" title="E-mail the corresponding author
;
Walter E. Meyer
a
;
wmeyer@up.ac.za" class="auth_mail" title="E-mail the corresponding author
;
F. Danie Auret
a
;
Alexander T. Paradzah
a
;
Matshisa J. Legodi
a
关键词:
DLTS
;
4H-SiC
;
Alpha-particle irradiation
;
Annealing
;
Schottky barrier diode
刊名:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
出版年:2016
10.
Effect of gamma-ray irradiation on the device process-induced
defects
in 4H-SiC epilayers
作者:
T. Miyazaki
a
;
T. Makino
b
;
A. Takeyama
b
;
S. Onoda
b
;
T. Ohshima
b
;
Y. Tanaka
c
;
M. Kandori
c
;
T. Yoshie
c
;
Y. Hijikata
a
;
yasuto@opt.ees.saitama-u.ac.jp
关键词:
4H-SiC
;
Gamma-ray irradiation
;
Photoluminescence (PL) imaging
;
Basal plane dislocation (BPD)
;
Stacking fault
;
Deep
level
transient spectroscopy (DLTS)
刊名:Superlattices and Microstructures
出版年:2016
1
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3
4
5
6
7
8
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