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Elsevier电子期刊(298)
在“
Elsevier电子期刊
”中,
命中:
298
条,耗时:小于0.01 秒
在所有数据库中总计命中:
298
条
1.
Study of fin tapering effect in nanoscale symmetric dual-k spacer (SDS) hybrid
FinFET
s
作者:
K.P. Pradhan
;
k.p.pradhan@ieee.org" class="auth_mail" title="E-mail the corresponding author
;
Priyanka
priyankarajputnit@gmail.com" class="auth_mail" title="E-mail the corresponding author
;
P.K. Sahu
pksahu@nitrkl.ac.in" class="auth_mail" title="E-mail the corresponding author
关键词:
Hybrid
FinFET
s
;
Dual-k spacer
;
Tapered trigate
FinFET
s
;
Fin angle
;
Fin height
;
Short channel effects (SCEs)
刊名:Materials Science in Semiconductor Processing
出版年:2017
2.
Two methods of tuning threshold voltage of bulk
FinFET
s with replacement high-k metal-gate stacks
作者:
Miao Xu
a
;
b
;
Huilong Zhu
a
;
zhuhuilong@ime.ac.cn
;
Yanbo Zhang
a
;
zhangyanbo@ime.ac.cn
;
Qiuxia Xu
a
;
Yongkui Zhang
a
;
Changliang Qin
a
;
b
;
Qingzhu Zhang
a
;
b
;
Huaxiang Yin
a
;
b
;
Hao Xu
a
;
b
;
Shuai Chen
a
;
Jun Luo
a
;
b
;
Chunlong Li
a
;
Chao Zhao
a
;
b
;
Tianchun Ye
a
;
b
关键词:
FinFET
;
Halo
;
Work function
;
Punch through stop pocket
;
Threshold voltage
;
High k metal gate
刊名:Solid-State Electronics
出版年:2017
3.
Aging comparative analysis of high-performance
FinFET
and CMOS flip-flops
作者:
Shiva Taghipour
;
taghipoor_shiva@yahoo.com
;
Rahebeh Niaraki Asli
niaraki@guilan.ac.ir
关键词:
Aging effect
;
Bias Temperature Instability (BTI)
;
FinFET
;
Flip-flop
;
Hot Carrier Injection (HCI)
刊名:Microelectronics Reliability
出版年:2017
4.
Low frequency noise assessment in n- and p-channel sub-10 nm triple-gate
FinFET
s: Part II: Measurements and results
作者:
D. Boudier
a
;
dimitri.boudier@ensicaen.fr
;
B. Cretu
b
;
E. Simoen
c
;
R. Carin
a
;
A. Veloso
c
;
N. Collaert
c
;
A. Thean
c
关键词:
Triple-gate
;
FinFET
;
Low frequency noise
;
1/f noise
;
Generation recombination
;
Traps
刊名:Solid-State Electronics
出版年:2017
5.
Underlapped
FinFET
on insulator: Quasi3D analytical model
作者:
Vandana Kumari
a
;
vandanakumari511@gmail.com
;
K. Sharmetha
b
;
sharmetha208@gmail.com
;
Manoj Saxena
c
;
saxena_manoj77@yahoo.co.in
;
Mridula Gupta
d
;
mridula@south.du.ac.in
关键词:
FinFET
;
ATLAS
;
Underlap
;
3D modeling
刊名:Solid-State Electronics
出版年:2017
6.
Performance enhancement of AlGaN/GaN nanochannel omega-
FinFET
作者:
Ki-Sik Im
a
;
Jae Hwa Seo
b
;
Sindhuri Vodapally
b
;
In Man Kang
b
;
Jae-Hoon Lee
c
;
Sorin Cristoloveanu
d
;
Jung-Hee Lee
b
;
jlee@ee.knu.ac.kr
关键词:
AlGaN/GaN
;
Nanochannel
;
Omega-gate
;
FinFET
;
2DEG
;
Breakdown voltage
;
Subthreshold slope
刊名:Solid-State Electronics
出版年:2017
7.
Low frequency noise assessment in n- and p-channel sub-10 nm triple-gate
FinFET
s: Part I: Theory and methodology
作者:
D. Boudier
a
;
dimitri.boudier@ensicaen.fr
;
B. Cretu
b
;
E. Simoen
c
;
R. Carin
a
;
A. Veloso
c
;
N. Collaert
c
;
A. Thean
c
关键词:
Triple-gate
;
FinFET
;
Low frequency noise
;
1/f noise
;
Generation-recombination
;
Traps
刊名:Solid-State Electronics
出版年:2017
8.
DC and RF characterization of InGaAs replacement metal gate (RMG) nFETs on SiGe-OI
FinFET
s fabricated by 3D monolithic integration
作者:
V. Deshpande
a
;
VEE@zurich.ibm.com
;
V. Djara
a
;
E. O'Connor
a
;
P. Hashemi
b
;
K. Balakrishnan
b
;
D. Caimi
a
;
M. Sousa
a
;
L. Czornomaz
a
;
J. Fompeyrine
a
关键词:
3D monolithic
;
InGaAs
;
RMG
;
High-frequency
;
FinFET
刊名:Solid-State Electronics
出版年:2017
9.
Asymmetrically doped stacked channel strained SOI
FinFET
作者:
Shashank Dubey
;
shashank.dubey@iiitdmj.ac.in
;
Pravin N. Kondekar
pnkondekar@iiitdmj.ac.in
关键词:
Asymmetric doping
;
SSOI
;
Threshold voltage
;
OFF current
;
Stack
刊名:Superlattices and Microstructures
出版年:2017
10.
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS
FinFET
technology node considering basic arithmetic circuits
作者:
S. Strangio
a
;
seb88str@gmail.com
;
P. Palestri
a
;
M. Lanuzza
b
;
D. Esseni
a
;
F. Crupi
b
;
L. Selmi
a
关键词:
III-V
;
TFET
;
Full adders
;
Ripple carry adders
刊名:Solid-State Electronics
出版年:2017
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