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Elsevier电子期刊(713)

在“Elsevier电子期刊”中，命中：713条，耗时：0.0109955 秒

在所有数据库中总计命中：723条

1.Europium and potassium co-doped strontium metaborate single crystals grown by the Czochralski method

作者：Michał Głowacki^a ; ^{glowacki@ifpan.edu.pl} ; Piotr Solarz^b ; Witold Ryba-Romanowski^b ; Inocencio R. Martí ; n^c ; Ryszard Diduszko^a ; ^d ; Marek Berkowski^a

关键词：A2. Czochralski method ; A2. Single crystal growth ; B1. Oxides ; B2. Phosphors

刊名：Journal of Crystal Growth

出版年：2017

2.Behavior of volatile dopants (P, Sb) in Czochralski silicon growth

作者：M. Porrini ; R. Scala ; V.V. Voronkov

关键词：A2. Czochralski method ; B2. Semiconducting silicon ; A1. Doping ; A2. Industrial Crystallization

刊名：Journal of Crystal Growth

出版年：2017

3.Characterization of the loss of the dislocation-free growth during Czochralski silicon pulling

作者：Adeline Lanterne^a ; ^{adeline.lanterne@ntnu.no} ; Guilherme Gaspar^a ; Yu Hu^b ; Eivind Ø ; vrelid^c ; Marisa Di Sabatino^a

关键词：A2. Czochralski method ; B2. Semiconducting silicon ; A1. Dislocations ; B3. Solar cells

刊名：Journal of Crystal Growth

出版年：2017

4.Control of heat transfer in continuous-feeding Czochralski-silicon crystal growth with a water-cooled jacket

作者：Wenhan Zhao ; Lijun Liu ; ^{ljliu@mail.xjtu.edu.cn}

关键词：A1. Computer simulation ; A2. Continuous-feeding Czochralski method ; A1. Heat transfer enhancement ; B2. Semiconducting silicon ; A1. Stresses

刊名：Journal of Crystal Growth

出版年：2017

5.Growth and optical properties of ZnWO₄ single crystals pure and doped with Ca and Eu

作者：Z. Kowalski^a ; ^{zwkowalski@gmail.com} ; S.M. Kaczmarek^a ; M. Berkowski^b ; M. Głowacki^b ; Y.A. Zhydachevskii^b ; A. Suchocki^b

关键词：A2 Single crystal growth ; A2 Czochralski method ; B1 Tungstates ; B1 Zinc compounds ; B2 Scintillator materials

刊名：Journal of Crystal Growth

出版年：2017

6.Oxygen precipitation behavior in heavily arsenic doped silicon crystals

作者：Stephan Haringer^a ; Daniela Gambaro^b ; Maria Porrini^a ; ^{mporrini@sunedisonsemi.it}

关键词：A2. Czochralski method ; B2. Semiconducting silicon ; A1. Characterization ; A1. Volume defects

刊名：Journal of Crystal Growth

出版年：2017

7.Large-lattice-parameter perovskite single-crystal substrates

作者：Reinhard Uecker^a ; ^{reinhard.uecker@ikz-berlin.de} ; Rainer Bertram^a ; Mario Brü ; tzam^a ; Zbigniew Galazka^a ; Thorsten M. Gesing^b ; Christo Guguschev^a ; Detlef Klimm^a ; Michael Klupsch^a ; Albert Kwasniewski^a ; Darrell G. Schlom^c ; ^d

关键词：A1. Crystal structure ; A1. Phase diagrams ; A1. Substrates ; A2. Czochralski method ; B1. Perovskites ; B1. Rare-earth compounds

刊名：Journal of Crystal Growth

出版年：2017

8.Numerical simulation of the oxygen concentration distribution in silicon melt for different crystal lengths during Czochralski growth with a transverse magnetic field

作者：Jyh-Chen Chen^a ; ^{jcchen@cc.ncu.edu.tw" class="auth_mail" title="E-mail the corresponding author} ; Pei-Yi Chiang^a ; Thi Hoai Thu Nguyen^a ; Chieh Hu^a ; Chun-Hung Chen^b ; Chien-Cheng Liu^b

关键词：A1. Computer simulation ; A1. Heat transfer ; A1. Impurities ; A1. Magnetic fields ; A2. Czochralski method ; A2. Single crystal growth

刊名：Journal of Crystal Growth

出版年：2016

9.Single crystal growth of Ga₃Ni₂ by the Czochralski method

作者：Magdalena Wencka^a ; Mirtha Pillaca^b ; Peter Gille^b ; ^{peter.gille@lrz.uni-muenchen.de" class="auth_mail" title="E-mail the corresponding author}

关键词：A1. Phase diagrams ; A2. Czochralski method ; A2. Growth from high temperature solutions ; B1. Intermetallic compounds ; B2. Catalysts

刊名：Journal of Crystal Growth

出版年：2016

10.Experimental study of cold plume instability in large Prandtl number Czochralski melt: Parametric dependences and scaling laws

作者：E. Miroshnichenko ; E. Kit ; A.Yu. Gelfgat ; ^{gelfgat@tau.ac.il" class="auth_mail" title="E-mail the corresponding author}

关键词：A1. Convection ; A1. Fluid flows ; A1. Heat transfer ; A2. Czochralski method

刊名：Journal of Crystal Growth

出版年：2016

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