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Elsevier电子期刊(689)

在“Elsevier电子期刊”中，命中：689条，耗时：0.0689556 秒

在所有数据库中总计命中：724条

1.Microstructure, growth mechanism and anisotropic resistivity of quasi-one-dimensional ZrTe₅ crystal

作者：Yang-Yang Lv^a ; Fan Zhang^a ; Bin-Bin Zhang^a ; Bin Pang^a ; Shu-Hua Yao^a ; ^{shyao@nju.edu.cn} ; Y.B. Chen^b ; ^{ybchen@nju.edu.cn} ; Liwang Ye^c ; Jian Zhou^a ; Shan-Tao Zhang^a ; Yan-Feng Chen^a ; ^d

关键词：A1. Crystal morphology ; A1. Low dimensional structures ; A2. Growth from vapor ; A2. Single crystal growth ; A3. Chemical vapor transport processes

刊名：Journal of Crystal Growth

出版年：2017

2.Synthesis of zirconia (ZrO₂) nanowires via chemical vapor deposition

作者：M.K. Baek ; S.J. Park ; D.J. Choi ; ^{drchoidj@yonsei.ac.kr}

关键词：A1. Nanostructures ; A1. Growth models ; A2. Single crystal growth ; A3. Chemical vapor deposition processes ; B1. Oxides

刊名：Journal of Crystal Growth

出版年：2017

3.Pathways for synthesis of new selenium-containing oxo-compounds: Chemical vapor transport reactions, hydrothermal techniques and evaporation method

作者：Vadim M. Kovrugin^a ; ^b ; Marie Colmont^a ; ^{marie.colmont@ensc-lille.fr} ; Oleg I. Siidra^b ; Vladislav V. Gurzhiy^b ; Sergey V. Krivovichev^b ; Olivier Mentré ; ^a

关键词：A1. Crystal structure ; A2. Growth from vapor ; A2. Hydrothermal crystal growth ; A2. Single crystal growth ; A2. Growth from solutions ; B1. Inorganic compounds

刊名：Journal of Crystal Growth

出版年：2017

4.Non-classical crystallization of silicon thin films during hot wire chemical vapor deposition

作者：Jae-Soo Jung^a ; Sang-Hoon Lee^b ; Da-Seul Kim^a ; Kun-Su Kim^a ; Soon-Won Park^a ; Nong-Moon Hwang^a ; ^c ; ^{nmhwang@snu.ac.kr}

关键词：A1. Crystal morphology ; A1. Growth model ; A2 Single crystal growth ; A3. Chemical vapor deposition processes ; B1. Nanomaterials ; B2. Semiconducting silicon

刊名：Journal of Crystal Growth

出版年：2017

5.Transition metal doping of GaSe implemented with low temperature liquid phase growth

作者：Nuo Lei^a ; Youhei Sato^a ; Tadao Tanabe^a ; ^{tadao.tanabe.b1@tohoku.ac.jp} ; Kensaku Maeda^b ; Yutaka Oyama^a

关键词：A1. Point defects ; A2. Growth from melt ; A3. Liquid phase epitaxy ; B1. Gallium compounds ; B2. Semiconducting gallium compounds ; B3. Nonlinear optical

刊名：Journal of Crystal Growth

出版年：2017

6.Step density waves on growing vicinal crystal surfaces - Theory and experiment

作者：Bogdan Ranguelov^a ; ^{rangelov@ipc.bas.bg} ; Pierre Mü ; ller^b ; Jean-Jacques Metois^b ; Stoyan Stoyanov^a

关键词：A1. Growth models ; A1. Morphological stability ; A1. Surface processes ; A1. Surface structure ; A2. Growth from vapor ; B2. Semiconducting silicon

刊名：Journal of Crystal Growth

出版年：2017

7.A new heating stage for high Temperature/low fO₂ conditions

作者：L. Tissandier^a ; ^{tix@crpg.cnrs-nancy.fr} ; L. Florentin^a ; D. Lequin^a ; P. Baillot^a ; F. Faure^a ; ^b

关键词：A1. Volume defects ; A1. Crystal morphology ; A2. Growth from vapor ; A2. Natural crystal growth ; B1. Minerals ; B3. High temperature heating stage

刊名：Journal of Crystal Growth

出版年：2017

8.Growth and characterization of β-Ga₂O₃ nanowires obtained on not-catalyzed and Au/Pt catalyzed substrates

作者：Davide Calestani^a ; ^{calle@imem.cnr.it} ; Aderemi Babatunde Alabi^b ; Nicola Coppedè ; ^a ; Marco Villani^a ; Laura Lazzarini^a ; Filippo Fabbri^a ; ^c ; Giancarlo Salviati^a ; Andrea Zappettini^a

关键词：A1. Nanostructures ; A3. Chemical vapor deposition processes ; B1. Oxides ; B1. Nanomaterials ; B2. Semiconducting gallium compounds

刊名：Journal of Crystal Growth

出版年：2017

9.Growth of high quality mercurous halide single crystals by physical vapor transport method for AOM and radiation detection applications

作者：Priyanthi M. Amarasinghe^a ; ^{pamarsi@brimrose.com" class="auth_mail" title="E-mail the corresponding author} ; Joo-Soo Kim^a ; Henry Chen^a ; Sudhir Trivedi^a ; Syed B. Qadri^b ; Jolanta Soos^a ; Mark Diestler^a ; Dajie Zhang^a ; Neelam Gupta^c ; Janet L. Jensen^d ; James Jensen^d

关键词：A1. High resolution X-ray diffraction ; A1. X-ray topography ; A2. Growth from vapor ; A2. Single crystal growth ; B1. Halides ; B2. Acousto-optic materials

刊名：Journal of Crystal Growth

出版年：2016

10.Stable and high-speed SiC bulk growth without dendrites by the HTCVD method

作者：Yuichiro Tokuda^a ; ^b ; ^{YUICHIRO_TOKUDA@denso.co.jp" class="auth_mail" title="E-mail the corresponding author} ; Emi Makino^a ; ^b ; Naohiro Sugiyama^a ; ^b ; Isaho Kamata^c ; Norihiro Hoshino^c ; Jun Kojima^a ; ^b ; Kazukuni Hara^a ; ^b ; Hidekazu Tsuchida^c

关键词：A1. Dendrites ; A2. Growth from vapor ; A2. Industrial crystallization ; A2. Single crystal growth ; B2. Semiconducting silicon compounds

刊名：Journal of Crystal Growth

出版年：2016

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