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Wiley电子期刊(6)
NATURE电子期刊(2)
ACS电子期刊(17)
SpringerLink电子期刊(38)
Elsevier电子期刊(122)
在“
Elsevier电子期刊
”中,
命中:
122
条,耗时:小于0.01 秒
在所有数据库中总计命中:
185
条
1.
Nitrogen-doped
amorphous
oxide semiconductor thin film transistors with double-stacked channel layers
作者:
Haiting Xie
;
Qi Wu
;
Ling Xu
;
Lei Zhang
;
Guochao Liu
;
Chengyuan Dong
;
cydong@sjtu.edu.cn" class="auth_mail" title="E-mail the corresponding author
关键词:
Amorphous
oxide semiconductor (AOS)
;
Thin film transistor (TFT)
;
Double-stacked channel layers (DSCL)
;
Nitrogen-doped
amorphous
InGaZnO (a-
IGZO
;
N)
;
Amorphous
InZnO (a-IZO)
刊名:Applied Surface Science
出版年:2016
2.
Bending stability of flexible
amorphous
IGZO
thin film transistors with transparent IZO/Ag/IZO oxide-metal-oxide electrodes
作者:
Yun Cheol Kim
a
;
Su Jeong Lee
a
;
Il-Kwon Oh
b
;
Seunggi Seo
b
;
Hyungjun Kim
b
;
Jae-Min Myoung
a
;
jmmyoung@yonsei.ac.kr" class="auth_mail" title="E-mail the corresponding author
关键词:
Flexible transparent electrodes
;
Amorphous
indium-gallium-zinc-oxide (a-
IGZO
)
;
Oxide-metal-oxide (OMO)
;
Thin film transistor (TFT)
刊名:Journal of Alloys and Compounds
出版年:2016
3.
Improvement of the positive bias stability of a-
IGZO
TFTs by the HCN treatment
作者:
Myeong-Ho Kim
a
;
Myung-Jea Choi
a
;
Katsuya Kimura
b
;
Hikaru Kobayashi
b
;
Duck-Kyun Choi
a
;
duck@hanyang.ac.kr" class="auth_mail" title="E-mail the corresponding author
关键词:
HCN treatment
;
Amorphous
IGZO
;
PBS instability
刊名:Solid State Electronics
出版年:2016
4.
Ambient effect on thermal stability of
amorphous
InGaZnO thin film transistors
作者:
Jianeng Xu
;
Qi Wu
;
Ling Xu
;
Haiting Xie
;
Guochao Liu
;
Lei Zhang
;
Chengyuan Dong
;
cydong@sjtu.edu.cn" class="auth_mail" title="E-mail the corresponding author
关键词:
Amorphous
InGaZnO (a-
IGZO
)
;
Thin film transistor (TFT)
;
Thermal stability
;
Ambient gas
刊名:Solid State Electronics
出版年:2016
5.
Device characteristics of
amorphous
indium-gallium-zinc-oxide channel capped with silicon oxide passivation layers
作者:
Geon Jang
a
;
Su Jeong Lee
a
;
Yun Cheol Kim
a
;
Sang Hoon Lee
a
;
Pranab Biswas
a
;
Woong Lee
b
;
woonglee@changwon.ac.kr" class="auth_mail" title="E-mail the corresponding author
;
Jae-Min Myoung
a
;
jmmyoung@yonsei.ac.kr" class="auth_mail" title="E-mail the corresponding author
关键词:
a-
IGZO
TFT
;
SiO2 passivation layer
;
Plasma damage
;
Etch stop layer-free
;
RF magnetron sputtering
刊名:Materials Science in Semiconductor Processing
出版年:2016
6.
Half-Corbino short-channel
amorphous
In-Ga-Zn-O thin-film transistors with a-SiO
x
or a-SiO
x
/a-SiN
x
passivation layers
作者:
Chumin Zhao
a
;
Tze-Ching Fung
b
;
Jerzy Kanicki
a
;
kanicki@eecs.umich.edu" class="auth_mail" title="E-mail the corresponding author
关键词:
Thin-film transistors
;
Amorphous
In&ndash
;
Ga&ndash
;
Zn&ndash
O ;
Corbino
;
Asymmetric electrical properties
;
Short-channel effect
;
Bias-temperature stability
刊名:Solid State Electronics
出版年:2016
7.
Controlling In-Ga-Zn-O thin films transport properties through density changes
作者:
Jakub Kaczmarski
a
;
kaczmarski@ite.waw.pl" class="auth_mail" title="E-mail the corresponding author
;
Torben Boll
b
;
Michał A. Borysiewicz
a
;
Andrzej Taube
a
;
c
;
Mattias Thuvander
b
;
Jia Yan Law
b
;
1
;
Eliana Kamińska
a
;
Krystyna Stiller
b
关键词:
In&ndash
;
Ga&ndash
;
Zn&ndash
O ;
IGZO
;
Atom Probe Tomography
;
Amorphous
oxide semiconductors
;
Schottky contacts
刊名:Thin Solid Films
出版年:2016
8.
Effects of argon flow rate on electrical properties of
amorphous
indium gallium zinc oxide thin-film transistors
作者:
A.K. Sahoo
;
G.M. Wu
;
wu@mail.cgu.edu.tw" class="auth_mail" title="E-mail the corresponding author
关键词:
Argon
;
Gas flow rate
;
Electrical properties
;
Amorphous
indium gallium zinc oxide
;
Thin-film transistor
刊名:Thin Solid Films
出版年:2016
9.
DC sputtered
amorphous
In-Sn-Zn-O thin-film transistors: Electrical properties and stability
作者:
Mitsuru Nakata
a
;
b
;
1
;
Chumin Zhao
a
;
1
;
Jerzy Kanicki
a
;
kanicki@eecs.umich.edu" class="auth_mail" title="E-mail the corresponding author
关键词:
Thin-film transistors
;
Amorphous
In&ndash
;
Sn&ndash
;
Zn&ndash
O ;
Field-effect mobility
;
Electrical stability
刊名:Solid State Electronics
出版年:2016
10.
Amorphous
InGaZnO thin film transistors with sputtered silver source/drain and gate electrodes
作者:
Qi Wu
;
Ling Xu
;
Jianeng Xu
;
Haiting Xie
;
Chengyuan Dong
;
cydong@sjtu.edu.cn" class="auth_mail" title="E-mail the corresponding author
关键词:
Thin film transistors
;
InGaZnO
;
Silver electrodes
;
Sputtering
刊名:Materials Science in Semiconductor Processing
出版年:2016
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