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内部出版物
SpringerLink电子期刊(48)
ProQuest学位论文(2)
Elsevier电子期刊(64)
ACS电子期刊(2)
在“
Elsevier电子期刊
”中,
命中:
64
条,耗时:0.0230178 秒
在所有数据库中总计命中:
116
条
1.
A compact implementation of a negative switched-capacitor voltage regulator dedicated to
body
-
biasing
of CMOS circuits
作者:
Thomas Souvignet
a
;
Bruno Allard
a
;
bruno.allard@insa-lyon.fr
;
Alexandre Mas
b
关键词:
Body
-
biasing
;
Switched capacitor circuits
;
Closed loop systems
刊名:Microelectronics Journal
出版年:2017
2.
Selective
body
biasing
for post-silicon tuning of sub-threshold designs: A semi-infinite programming approach with Incremental Hypercubic Sampling
作者:
Hui Geng
a
;
hgrfd@mst.edu" class="auth_mail" title="E-mail the corresponding author
Author Vitae
;
Jianming Liu
a
;
jltx5@mst.edu" class="auth_mail" title="E-mail the corresponding author
Author Vitae
;
Jinglan Liu
b
;
jliu16@nd.edu" class="auth_mail" title="E-mail the corresponding author
Author Vitae
;
Pei-Wen Luo
c
;
peiwen@itri.org.tw" class="auth_mail" title="E-mail the corresponding author
Author Vitae
;
Liang-Chia Cheng
c
;
aga@itri.org.tw" class="auth_mail" title="E-mail the corresponding author
Author Vitae
;
Steven L. Grant
a
;
sgrant@mst.edu" class="auth_mail" title="E-mail the corresponding author
Author Vitae
;
Yiyu Shi
b
;
yshi4@nd.edu" class="auth_mail" title="E-mail the corresponding author
Author Vitae
关键词:
Sub-threshold designs
;
Body
biasing
;
Semi-infinite programming
;
Incremental Hypercubic Sampling
刊名:Integration, the VLSI Journal
出版年:2016
3.
Low voltage logic circuits exploiting gate level dynamic
body
biasing
in 28 nm UTBB FD-SOI
作者:
Ramiro Taco
a
;
Itamar Levi
b
;
Marco Lanuzza
a
;
m.lanuzza@dimes.unical.it" class="auth_mail" title="E-mail the corresponding author
;
Alexander Fish
b
关键词:
Low-voltage logic design
;
Dynamic
body
biasing
;
UTBB FD-SOI
刊名:Solid State Electronics
出版年:2016
4.
A 60 GOPS/W, −1.8 V to 0.9 V
body
bias ULP cluster in 28 nm UTBB FD-SOI technology
作者:
Davide Rossi
a
;
;
Antonio Pullini
b
;
Igor Loi
a
;
Michael Gautschi
b
;
Frank K. Gü
;
rkaynak
b
;
Andrea Bartolini
a
;
b
;
Philippe Flatresse
c
;
Luca Benini
a
;
b
关键词:
Ultra-low-power devices
;
Near-threshold computing
;
Multi-core architectures
;
FD-SOI
;
Body
biasing
;
Temperature compensation
刊名:Solid State Electronics
出版年:2016
5.
Performance vs. reliability adaptive
body
bias scheme in 28 nm & 14 nm UTBB FDSOI nodes
作者:
C. Ndiaye
a
;
b
;
cheikh.ndiaye@st.com" class="auth_mail" title="E-mail the corresponding author
;
V. Huard
a
;
X. Federspiel
a
;
F. Cacho
a
;
A. Bravaix
b
关键词:
FDSOI
;
Ring oscillator
;
Body
bias
;
HCI
;
BTI
刊名:Microelectronics Reliability
出版年:2016
6.
Design of low phase noise CMOS VCO using cross coupled topology with capacitor feedback
作者:
Meng-Ting Hsu
;
hsumt@yuntech.edu.tw" class="auth_mail" title="E-mail the corresponding author
Author Vitae
;
Wei-Jhih Li
g9713801@yuntech.edu.tw" class="auth_mail" title="E-mail the corresponding author
Author Vitae
;
Shuo-Chang Hsu
g9913740@yuntech.edu.tw" class="auth_mail" title="E-mail the corresponding author
Author Vitae
关键词:
Voltage controlled oscillator
;
Low phase noise
;
Q-enhancement
;
Body
-
biasing
;
Capacitor feedback
刊名:Microelectronics Journal
出版年:2016
7.
UTBB FDSOI: Evolution and opportunities
作者:
Stephane Monfray
;
stephane.monfray@st.com" class="auth_mail" title="E-mail the corresponding author
;
Thomas Skotnicki
thomas.skotnicki@st.com" class="auth_mail" title="E-mail the corresponding author
关键词:
FDSOI
;
Thin
Body
;
Thin BOX
;
Back
biasing
;
IoT
;
Sensors
;
3D integration
刊名:Solid State Electronics
出版年:2016
8.
New early Pleistocene hominin teeth from the Swartkrans Formation, South Africa
作者:
Travis Rayne Pickering
a
;
b
;
c
;
tpickering@wisc.edu" class="auth_mail" title="E-mail the corresponding author
;
Jason L. Heaton
b
;
c
;
d
;
Morris B. Sutton
e
;
Ron J. Clarke
b
;
Kathleen Kuman
e
;
Jess Hutton Senjem
a
;
C.K. Brain
c
关键词:
Swartkrans Formation
;
Paranthropus robustus
;
Dentition
;
Body
size sexual dimorphism
;
Carnivore-collecting hypothesis
刊名:Journal of Human Evolution
出版年:2016
9.
Planar Fully-Depleted-Silicon-On-Insulator technologies: Toward the 28 nm node and beyond
作者:
B. Doris
a
;
B. DeSalvo
b
;
c
;
barbara.desalvo@cea.fr" class="auth_mail" title="E-mail the corresponding author
;
K. Cheng
d
;
P. Morin
e
;
M. Vinet
b
;
c
关键词:
FDSOI
;
Ultra-thin BOX and
body
FDSOI
;
Multi-Vt
;
Back-
biasing
;
Strain enhancement
刊名:Solid State Electronics
出版年:2016
10.
UTBB FDSOI suitability for IoT applications: Investigations at device, design and architectural levels
作者:
Florent Berthier
a
;
b
;
florent.berthier@cea.fr" class="auth_mail" title="E-mail the corresponding author
;
Edith Beigne
a
;
Fré
;
dé
;
ric Heitzmann
a
;
Olivier Debicki
a
;
Jean-Fré
;
dé
;
ric Christmann
a
;
Alexandre Valentian
a
;
Olivier Billoint
a
;
Esteve Amat
a
;
1
;
Dominique Morche
a
;
Soundous Chairat
a
;
Olivier Sentieys
b
关键词:
UTBB FDSOI
;
IoT
;
Asynchronous processor
;
Power estimation
;
MCU
刊名:Solid State Electronics
出版年:2016
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