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内部出版物
SpringerLink电子期刊(9)
NATURE电子期刊(1)
Elsevier电子期刊(61)
ACS电子期刊(4)
在“
Elsevier电子期刊
”中,
命中:
61
条,耗时:0.0239583 秒
在所有数据库中总计命中:
75
条
1.
Scaling/LER study of Si
GAA
nanowire FET using 3D finite element Monte Carlo simulations
作者:
Muhammad A. Elmessary
a
;
c
;
M.A.A.Elmessary.716902@swansea.ac.uk
;
Daniel Nagy
a
;
Manuel Aldegunde
d
;
Natalia Seoane
e
;
Guillermo Indalecio
e
;
Jari Lindberg
f
;
Wulf Dettmer
b
;
Djordje Perić
b
;
Antonio J. Garcí
;
a-Loureiro
e
;
Karol Kalna
a
关键词:
Schrö
;
dinger quantum corrections
;
Monte Carlo simulations
;
GAA
nanowire FET
;
LER
;
Variability
刊名:Solid-State Electronics
出版年:2017
2.
Study of line-TFET analog performance comparing with other TFET and MOSFET architectures
作者:
Paula Ghedini Der Agopian
a
;
b
;
agopian@lsi.usp.br
;
Joã
;
o Antonio Martino
a
;
Anne Vandooren
c
;
Rita Rooyackers
c
;
Eddy Simoen
c
;
Aaron Thean
c
;
Cor Claeys
c
;
d
关键词:
Line-TFET
;
Intrinsic voltage gain
;
Different device architectures
刊名:Solid-State Electronics
出版年:2017
3.
TCAD performance analysis of high-K dielectrics for
gate
all
around
InAs nanowire transistor considering scaling of
gate
dielectric thickness
作者:
Richa Gupta
1richagupta@gmail.com" class="auth_mail" title="E-mail the corresponding author
;
Rakesh Vaid
;
rakeshvaid@ieee.org" class="auth_mail" title="E-mail the corresponding author
关键词:
Gate
All
Around
(
GAA
)
;
Lanthanum oxide (La2O3)
;
Drain Induced Barrier Lowering (DIBL)
;
Effective oxide thickness (EOT)
;
Nanowire FET (NWFET)
;
Subthreshold slope (SS)
刊名:Microelectronic Engineering
出版年:2016
4.
P
all
adium
Gate
All
Around
- Hetero Dielectric -Tunnel FET based highly sensitive Hydrogen Gas Sensor
作者:
Jaya Madan
jayamadan@dtu.ac.in
;
Rishu Chaujar
;
rishu.phy@dce.edu
关键词:
Gas sensor
;
Gas adsorption
;
Hetero
gate
dielectric
;
Tunnel FET
刊名:Superlattices and Microstructures
出版年:2016
5.
Experimental demonstration of strained Si nanowire
GAA
n-TFETs and inverter operation with complementary TFET logic at low supply voltages
作者:
G.V. Luong
a
;
g.luong@fz-juelich.de" class="auth_mail" title="E-mail the corresponding author
;
S. Strangio
b
;
A. Tiedemannn
a
;
S. Lenk
a
;
S. Trellenkamp
a
;
K.K. Bourdelle
c
;
Q.T. Zhao
a
;
q.zhao@fz-juelich.de" class="auth_mail" title="E-mail the corresponding author
;
S. Mantl
a
关键词:
Si nanowire TFET
;
Analog performance
;
Gate
-
all
-
around
;
Inverter
;
C-TFET
;
Subthreshold slope
刊名:Solid State Electronics
出版年:2016
6.
Replacement fin processing for III-V on Si: From FinFets to nanowires
作者:
Niamh Waldron
;
niamh.waldron@imec.be" class="auth_mail" title="E-mail the corresponding author
;
Clement Merckling
;
Lieve Teugels
;
Patrick Ong
;
Farid Sebaai
;
Kathy Barla
;
Nadine Collaert
;
Voon-Yew (Aaron) Thean
关键词:
III-V
;
FinFet
;
Gate
-
All
-
Around
(
GAA
)
;
Nanowire
;
In
GaA
s
;
MOS
刊名:Solid State Electronics
出版年:2016
7.
Improved analog and RF performances of
gate
-
all
-
around
junctionless MOSFET with drain and source extensions
作者:
F. Djeffal
a
;
b
;
faycal.djeffal@univ-batna.dz" class="auth_mail" title="E-mail the corresponding author
;
faycaldzdz@hotmail.com" class="auth_mail" title="E-mail the corresponding author
;
H. Ferhati
a
;
T. Bentrcia
b
关键词:
GAA
J MOSFET
;
Junctionless
;
S/D extensions
;
Analog/RF parameters
;
Linearity
刊名:Superlattices and Microstructures
出版年:2016
8.
Simulation Analysis of Hafnium-based-Oxide and Effects of Met
all
ization on Electrical Performance of
Gate
-All-
Around
Finfet Devices
作者:
M. Salami
;
M.H. Shahrokh Abadi
;
mhshahrokh@ieee.org" class="auth_mail" title="E-mail the corresponding author
关键词:
Short channel effects
;
Gate
-
all
-
around
FinFET
;
Gate
stack material and high-k material
刊名:Procedia Materials Science
出版年:2015
9.
Wire width dependence of hot carrier degradation in silicon nanowire
gate
-
all
-
around
MOSFETs
作者:
Jin Hyung Choi
;
Jong Tae Park
;
jtpark@incheon.ac.kr" class="auth_mail" title="E-mail the corresponding author
关键词:
Nanowire transistors
;
Hot carrier degradation
刊名:Microelectronics Reliability
出版年:2015
10.
Low power SRAM design for 14 nm
GAA
Si-nanowire technology
作者:
Gaurav Kaushal
a
;
H. Jeong
a
;
Satish Maheshwaram
b
;
S.K. Manhas
b
;
samanfec@iitr.ac.in" class="auth_mail" title="E-mail the corresponding author
;
S. Dasgupta
b
;
S.O. Jung
a
;
sjung@yonsei.ac.kr" class="auth_mail" title="E-mail the corresponding author
关键词:
Gate
-
all
-
around
;
Si-nanowire FET
;
SRAM cell
刊名:Microelectronics Journal
出版年:2015
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