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Wiley电子期刊(19)	SpringerLink电子期刊(154)	NATURE电子期刊(8)	Elsevier电子期刊(1929)
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在“Elsevier电子期刊”中，命中：1,929条，耗时：0.02199 秒

在所有数据库中总计命中：2,152条

1.Low frequency noise in hydrogenated p-type amorphous silicon thin films

作者：V.C. Lopes ; ^{vincent.lopes@unt.edu} ; A.J. Syllaios ; C.L. Littler

关键词：Amorphous silicon ; 1/f noise ; Low frequency noise ; Mott variable range hopping ; Hydrogen dilution ; Boron dopant

刊名：Journal of Non-Crystalline Solids

出版年：2017

2.The influence of methane flow rate on microstructure and surface morphology of a-SiC:H thin films prepared by plasma enhanced chemical vapor deposition technique

作者：Lihua Jiang^a ; ^{jlihua107@163.com} ; Xinyu Tan^a ; ^b ; ^{husttanxin@mail.tsinghua.edu.cn} ; Ting Xiao^a ; ^b ; Peng Xiang^a

关键词：Hydrogenated amorphous silicon carbide ; Thin films ; Plasma-enhanced chemical vapor deposition ; sp3 hybridized carbon ; Surface morphology

刊名：Thin Solid Films

出版年：2017

3.An investigation of the optical and structural properties of PECVD a-SiH thin films grown on a porous anodic aluminum template

作者：S. Dhahri^a ; ^{sami.dhahri.85@gmail.com} ; E. Fazio^b ; M. Ghrib^a ; F. Neri^b ; K. El Khirouni^c ; H. Ezzaouia^a

关键词：Amorphous Si nanoparticles ; Porous aluminum ; Hydrogenated amorphous silicon ; PECVD ; Substrate temperature

刊名：Journal of Alloys and Compounds

出版年：2017

4.Surface potential investigation on interdigitated back contact solar cells by Scanning Electron Microscopy and Kelvin Probe Force Microscopy: Effect of electrical bias

作者：Paul Narchi^a ; ^b ; ^{paul.narchi@polytechnique.edu} ; Vladimir Neplokh^c ; Valerio Piazza^c ; Twan Bearda^d ; Fabien Bayle^c ; Martin Foldyna^b ; Chiara Toccafondi^b ; Patricia Prod&rsquo ; homme^a ; Maria Tchernycheva^c ; Pere Roca i Cabarrocas^b

关键词：AFM ; Atomic Force Microscopy ; a-Si ; H ; hydrogenated amorphous silicon ; IBC ; Interdigitated Back Contact Solar Cell ; ITO ; Indium Tin Oxide ; J(V) ; current density &ndash ; voltage ; KPFM ; Kelvin Probe Force Microscopy ; SE ; Secondary Electrons ; SEM ; Scanning Electron Microscopy

刊名：Solar Energy Materials and Solar Cells

出版年：2017

5.The role of hydrogenated amorphous silicon oxide buffer layer on improving the performance of hydrogenated amorphous silicon germanium single-junction solar cells

作者：Jaran Sritharathikhun ; ^{jaran.sritharathikhun@nectec.or.th} ; Sorapong Inthisang ; Taweewat Krajangsang ; Patipan Krudtad ; Suttinan Jaroensathainchok ; Aswin Hongsingtong ; Amornrat Limmanee ; Kobsak Sriprapha

关键词：Hydrogenated amorphous silicon oxide layer ; Buffer layer ; Amorphous silicon germanium single junction solar cell

刊名：Optical Materials

出版年：2016

6.Improvement of hydrogenated amorphous silicon germanium thin film solar cells by different p-type contact layer

作者：Jaehyun Cho^a ; ¹ ; Duy Phong Pham^b ; ¹ ; Junhee Jung^a ; Chonghoon Shin^a ; Jinjoo Park^b ; Sangho Kim^a ; Anh Huy Tuan Le^b ; Hyeongsik Park^b ; S.M. Iftiquar^b ; Junsin Yi^a ; ^b ; ^{yi@yurim.skku.ac.kr" class="auth_mail" title="E-mail the corresponding author}

关键词：a-SiGe ; H thin film solar cells ; Hydrogenated microcrystalline silicon oxide ; p-type contact layer

刊名：Materials Science in Semiconductor Processing

出版年：2016

7.The influence of annealing temperature on the synthesis of silicon quantum dots embedded in hydrogenated amorphous Si-rich silicon carbide matrix

作者：Guozhi Wen^a ; ^{wwenguozhi@163.com" class="auth_mail" title="E-mail the corresponding author} ; Xiangbin Zeng^b ; Xianghu Li^a

关键词：Silicon ; Quantum dots ; Bonding configuration ; Temperature ; PECVD

刊名：Journal of Non-Crystalline Solids

出版年：2016

8.Bright luminescence in amorphous hydrogenated silicon-nitride quantum-dot films prepared by a special designed PECVD system

作者：D.Q. Shi ; B.C. Hu ; W. Xu ; X.N. Li ; C.Y. Ma ; Q.Y. Zhang ; ^{qyzhang@dlut.edu.cn" class="auth_mail" title="E-mail the corresponding author}

关键词：Amorphous silicon-nitride ; Quantum dot ; Photoluminescence

刊名：Journal of Luminescence

出版年：2016

9.High Quality Hydrogenated Amorphous Silicon Thin Films with Enhanced Growth Rates for Surface Passivation in an Al₂O₃ Based ICP Reactor

作者：J.W.M. Lim ; ^{marklim84th@gmail.com" class="auth_mail" title="E-mail the corresponding author} ; C.S. Chan ; L. Xu ; T.M. Ong ; S.Y. Huang ; D.Y. Wei ; Y.N. Guo ; S. Xu

关键词：Plasma ; Materials processing ; OES ; FTIR ; SIMS ; Surface passivation ; Amorphous silicon

刊名：Procedia Engineering

出版年：2016

10.Influence of the Dopant Penetration Depth on the Solar Cell Performance of n-type Interdigitated Back Contact Silicon Solar Cells

作者：Alexander V. Korovin^a ; ^b ; ^{alexander.korovin@lgep.supelec.fr" class="auth_mail" title="E-mail the corresponding author} ; José ; Alvarez^a ; Jean-Paul Kleider^a

关键词：crystalline silicon PV ; hydrogenated amorphous silicon PV ; back contacts ; modeling

刊名：Energy Procedia

出版年：2016

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