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Elsevier电子期刊(26)
在“
Elsevier电子期刊
”中,
命中:
26
条,耗时:小于0.01 秒
在所有数据库中总计命中:
26
条
1.
Capacitance–voltage analysis of InAs quantum dots grown on InAlAs/InP(0 0 1)
作者:
O. Saad
;
M. Baira
;
R. Ajjel
;
H. Maaref
;
B. Salem
;
G. Bré
;
mond
;
M. Gendry
关键词:
Capacitance–
;
voltage analysis
;
InAs/InAlAs/InP(0 0 1)
;
Quantum dots
刊名:Microelectronics Journal
出版年:2008
2.
DLTS and PL study of defects in InAlAs/InP heterojunctions grown by metal organic chemical vapor deposition
作者:
Bouzgarrou
;
S.
;
Ben Salem
;
M.M.
;
Hassen
;
F.
;
Kalboussi
;
A.
;
Souifi
;
A.
关键词:
DLTS
;
PL
;
Defect
;
Semiconductor
;
MOCVD
刊名:Materials Science & Engineering B
出版年:2005
3.
Capacitance–voltage profile characteristics of Schottky barrier structure with InAs quantum dots grown on InAlAs/InP(001)
作者:
M. Baira
;
R. Ajjel
;
H. Maaref
;
B. Salem
;
G. Bré
;
mond
;
M. Gendry and O. Marty
关键词:
Capacitance–
;
voltage profile
;
Quantum dots
;
InAs/InAlAs/InP structure
刊名:Materials Science and Engineering: C
出版年:2006
4.
Defect structure of InAlAs/InP layers
作者:
A. Shalimov
;
J. Bak-Misiuk
;
J. Kaniewski
;
J. Trela
;
W. Wierzchowski
;
K. Wieteska and W. Graeff
刊名:Journal of Alloys and Compounds
出版年:2005
5.
Bistability of electroluminescence in InAlAs/InP type II MQW diodes
作者:
Hakone
;
Yukihide
;
Kawamura
;
Yuichi
;
Yoshimatsu
;
Kiyotsune
;
Iwamura
;
Hidetoshi
;
Ito
;
Taichiro
;
et. al.
关键词:
InAlAs/InP
;
Type II MQW
;
EL spectrum
;
Bistability
;
Tunneling effect
刊名:Applied Surface Science
出版年:1997
6.
Characteristics of InAIAs/InP and InAIP/GaAs native oxides
作者:
Seong-Ju Bae
;
Jong-Min Kim
;
Chang-Young Park and Yong-Tak Lee
关键词:
InAlAs
;
InAlP
;
Oxidation
刊名:Solid-State Electronics
出版年:2006
7.
Infrared spectroscopy of self-organized InAs nanostructures grown on InAlAs/InP(001) for infrared photodetection applications
作者:
Fossard
;
F.
;
Julien
;
F.H.
;
Pé
;
ronne
;
E.
;
Alexandrou
;
A.
;
Brault
;
J.
;
Gendry
;
M.
关键词:
78.66
;
73.20.D
;
61.16.C
;
78.47
;
07.57.K
;
III&ndash
;
V semiconductors
;
Quantum wires
;
Quantum dots
;
Intraband transitions
;
Femtosecond spectroscopy
刊名:Infrared Physics and Technology
出版年:2001
8.
Optical properties of self-organized InAs nanostructures grown on InAlAs/InP(001)
作者:
Hjiri
;
M.
;
Hassen
;
F.
;
Maaref
;
H.
;
Salem
;
B.
;
Bremond
;
G.
;
Marty
;
O.
;
Brault
;
J.
;
Gendry
;
M.
关键词:
Quantum dots
;
Quantum wires
;
Polarized photoluminescence
;
InAs
刊名:Physica E
出版年:2003
9.
InAs nanostructure grown with different growth rate in InAlAs matrix on InP
(001)
substrate
作者:
Zhao
;
F.A.
;
Wu
;
J.
;
Jin
;
P.
;
Xu
;
B.
;
Wang
;
Z.G.
;
Zhang
;
C.L.
关键词:
68.55.
&minus
;
a
;
68.65.Hb
;
68.65.La
;
78.67.
&minus
;
n
;
InAs
;
InAlAs/InP
;
Quantum dots
;
Quantum wires
;
Polarized photoluminescence
刊名:Physica E
出版年:2004
10.
Effect of layer thickness of immiscible alloy In
0.52
Al
0.48
As on the morphology of InAs nanostructure grown on In
0.52
Al
0.48
As/InP (001)
作者:
Zhao
;
F.A.
;
Chen
;
Y.H.
;
Ye
;
X.L.
;
Xu
;
B.
;
Jin
;
P.
;
Wu
;
J.
;
Wang
;
Z.G.
;
Zhang
;
C.L.
关键词:
78.55.Cr
;
68.55.&minus
a ;
64.75.+g
;
78.67.&minus
n ;
A1. Nanostructures
;
A3. Molecular beam epitaxy
;
B2. Semiconducting III&ndash
;
V materials
刊名:Journal of Crystal Growth
出版年:2005
1
2
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