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Wiley电子期刊(2)
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Elsevier电子期刊(57)
在“
Elsevier电子期刊
”中,
命中:
57
条,耗时:小于0.01 秒
在所有数据库中总计命中:
87
条
1.
Cross-correlation based high resolution electron backscatter diffraction and electron channelling contrast imaging for strain mapping and dislocation distributions in
InAlN
thin films
作者:
A. Vilalta-Clemente
a
;
arantxa.vilalta-clemente@materials.ox.ac.uk
;
G. Naresh-Kumar
b
;
M. Nouf-Allehiani
b
;
P. Gamarra
c
;
M.A. di Forte-Poisson
c
;
C. Trager-Cowan
b
;
A.J. Wilkinson
a
关键词:
EBSD
;
ECCI
;
Dislocations
;
InAlN
;
HEMTs
刊名:Acta Materialia
出版年:2017
2.
In
0.18
Al
0.82
N/AlN/GaN MIS-HEMT on Si with Schottky-drain contact
作者:
P.-G. Chen
a
;
b
;
M. Tang
c
;
M.-H. Liao
b
;
M.H. Lee
a
;
mhlee@ntnu.edu.tw
关键词:
InAlN
;
Ohmic
;
Schottky
;
High-electron-mobilitytransistor (HEMT)
刊名:Solid-State Electronics
出版年:2017
3.
The function of an In
0.17
Al
0.83
N interlayer in n-ZnO/In
0.17
Al
0.83
N/p-GaN heterojunctions
作者:
Xiao Wang
;
Xuewei Gan
;
Guozhen Zhang
;
Xi Su
;
Meijuan Zheng
;
Zhiwei Ai
;
Hao Wu
;
h.wu@whu.edu.cn" class="auth_mail" title="E-mail the corresponding author
;
Chang Liu
;
chang.liu@whu.edu.cn" class="auth_mail" title="E-mail the corresponding author
关键词:
ZnO/
InAlN
/GaN hetrojunction
;
InAlN
interlayer
;
Light emitting diode
;
Electroluminescence
;
Band alignment
刊名:Applied Surface Science
出版年:2017
4.
Effect of film thickness on the surface, structural and electrical properties of
InAlN
films prepared by reactive co-sputtering
作者:
Naveed Afzal
a
;
naveed.phys@gmail.com" class="auth_mail" title="E-mail the corresponding author
;
Mutharasu Devarajan
a
;
Kamarulazizi Ibrahim
b
关键词:
III-nitride
;
InAlN
;
Thickness variations
;
Nanomaterial
;
Surface
;
Resistivity
刊名:Materials Science in Semiconductor Processing
出版年:2016
5.
Temperature Dependent Characteristics of
InAlN
/GaN HEMTs for mm-Wave Applications
作者:
Weichuan Xing
a
;
b
;
Zhihong Liu
a
;
Geok Ing Ng
b
;
Tomas Palacios
c
关键词:
InAlN
/GaN HEMTs
;
RF performance
;
temperature dependent.
刊名:Procedia Engineering
出版年:2016
6.
Comparison of electrical characteristics between AlGaN/GaN and lattice-matched
InAlN
/GaN heterostructure Schottky barrier diodes
作者:
Jian Ren
;
Dawei Yan
;
Yang Zhai
;
Wenjie Mou
;
Xiaofeng Gu
;
xgu@jiangnan.edu.cn" class="auth_mail" title="E-mail the corresponding author
关键词:
Lattice-matched
InAlN
/GaN Schottky barrier diode
;
AlGaN/GaN Schottky barrier diode
;
Electrical characteristics
;
Dislocation
刊名:Microelectronics Reliability
出版年:2016
7.
Hot electrons induced degradation in lattice-matched
InAlN
/GaN high electron mobility transistors
作者:
Jian Ren
;
Dawei Yan
;
Wenjie Mou
;
Yang Zhai
;
Guofeng Yang
;
Xiaofeng Gu
;
xgu@jiangnan.edu.cn" class="auth_mail" title="E-mail the corresponding author
关键词:
Lattice-matched
InAlN
/GaN HEMTs
;
Gate leakage degradation
;
Step-stress test
;
Hot electron model
刊名:Microelectronics Reliability
出版年:2016
8.
A comparative study on the growth of
InAlN
films on different substrates
作者:
Naveed Afzal
a
;
naveed.phys@gmail.com" class="auth_mail" title="E-mail the corresponding author
;
Mutharasu Devarajan
a
;
Kamarulazizi Ibrahim
b
关键词:
Semiconductor
;
III-nitride
;
Reactive sputtering
;
Structure
;
Surface
;
Different substrates
刊名:Materials Science in Semiconductor Processing
出版年:2016
9.
Two-dimensional electron gas (2DEG) mobility affected by the in mole fraction fluctuation in In
x
Al
1−
x
N/GaN heterostructures
作者:
Guipeng Liu
a
;
;
Jinfeng Zhang
b
;
Kunyi Lu
c
;
Wenjie Chen
a
;
Yonghui Tian
a
;
Jianhong Yang
a
关键词:
InAlN
/GaN heterostructures
;
Electron mobility
;
Mole fraction fluctuation
刊名:Physica E: Low-dimensional Systems and Nanostructures
出版年:2016
10.
Impact of gate engineering in enhancement mode n
++
GaN/
InAlN
/AlN/GaN HEMTs
作者:
Sarosij Adak
a
;
sarosijadak@gmail.com
;
Sanjit Kumar Swain
b
;
Hafizur Rahaman
a
;
Chandan Kumar Sarkar
c
关键词:
DMG
;
TMG
;
Enhancement mode HEMT
;
InAlN
/GaN
;
Mixed signal application
;
Radio-frequency (RF) applications
刊名:Superlattices and Microstructures
出版年:2016
1
2
3
4
5
6
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