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Elsevier电子期刊(91)
在“
Elsevier电子期刊
”中,
命中:
91
条,耗时:小于0.01 秒
在所有数据库中总计命中:
91
条
1.
A theory study of the multiplication characteristics of InP/InGaAs avalanche photodiodes with double multiplication layers and double charge layers
作者:
Guipeng Liu
a
;
liugp@lzu.edu.cn" class="auth_mail" title="E-mail the corresponding author
;
Wenjie Chen
a
;
Linsheng Liu
b
;
Peng Jin
b
;
Yonghui Tian
a
;
Jianhong Yang
a
关键词:
In0.53Ga0.47As/InP avalanche photodiodes (APD)
;
Dead space
;
Excess noise factor
;
Mean gain
刊名:Optics Communications
出版年:2016
2.
Investigation of InP/In
0.65
Ga
0.35
As metamorphic p-channel doped-channel field-effect transistor
作者:
Jung-Hui Tsai
jhtsai@nknucc.nknu.edu.tw" class="auth_mail" title="E-mail the corresponding author
关键词:
InP/InGaAs
;
Metamorphic
;
p-channel
;
Field-effect transistor
;
Pseudomorphic
;
Transconductance
刊名:Superlattices and Microstructures
出版年:2016
3.
High-performance InP/InGaAs co-integrated metamorphic heterostructure bipolar and field-effect transistors with pseudomorphic base-emitter spacer and channel layers
作者:
Yi-Chen Wu
;
Jung-Hui Tsai
;
Te-Kuang Chiang
;
Chung-Cheng Chiang
;
Fu-Min Wang
关键词:
InP/InGaAs
;
Metamorphic
;
Co-integrated
;
BiFETs
;
Pseudomorphic
;
Transconductance
刊名:Solid-State Electronics
出版年:February, 2014
4.
Investigation of InP/InGaAs metamorphic co-integrated complementary doping-channel field-effect transistors for logic application
作者:
Jung-Hui Tsai
关键词:
InP/InGaAs
;
Metamorphic
;
Co-integrated
;
Complementary
;
Doping-channel
;
Field-effect transistor
;
Transconductance
;
Noise margins
刊名:Superlattices and Microstructures
出版年:January, 2014
5.
An improved model for InP/InGaAs double heterojunction bipolar transistors
作者:
Yuxia Shi
a
;
shiyuxia07@gmail.com
;
Zhi Jin
b
;
Yongbo Su
b
;
Yuxiong Cao
b
;
Yan Wang
a
;
wangy46@tsinghua.edu.cn
关键词:
Double heterojunction bipolar transistors
;
InP/InGaAs
;
Device model
;
Vertical bipolar inter-company (VBIC) model
刊名:Solid-State Electronics
出版年:2013
6.
An InP/InGaAs metamorphic ¦Ä-doped heterojunction bipolar transistor with high current gain and low offset voltage
作者:
Jung-Hui Tsai
;
Wen-Shiung Lour
;
Yi-Ting Chao
;
Sheng-Shiun Ye
;
Yung-Chun Ma
;
Jia-Cing Jhou
;
You-Ren Wu
;
Jhih-Jhong Ou-Yang
关键词:
InP/InGaAs
;
Metamorphic
;
Heterojunction bipolar transistor
;
Current gain
;
Offset voltage
刊名:Thin Solid Films
出版年:2012
7.
Impact of gate length and barrier thickness on performance of InP/InGaAs based Double Gate Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistor (DG MOS-HFET)
作者:
Sudhansu Kumar Pati
a
;
sudhansupt@gmail.com
;
Hemant Pardeshi
a
;
Godwin Raj
a
;
N. Mohan Kumar
b
;
Chandan Kumar Sarkar
a
关键词:
DGMOSFET
;
Short channel effect
;
Heterostructure
;
TCAD
;
Drift-diffusion
刊名:Superlattices and Microstructures
出版年:2013
8.
Optimization of MOCVD-diffused p-InP for planar avalanche photodiodes
作者:
O.J. Pitts
a
;
oliver.pitts@nrc-cnrc.gc.ca" class="auth_mail
;
M. Hisko
a
;
W. Benyon
a
;
S. Raymond
b
;
A.J. SpringThorpe
a
关键词:
A1. Diffusion
;
A3. Metalorganic chemical vapor deposition
;
A3. Metalorganic vapor phase epitaxy
;
A3. Organometallic vapor phase epitaxy
;
B1. Phosphides
;
B2. Semiconducting III&ndash
;
V materials
刊名:Journal of Crystal Growth
出版年:1 May, 2014
9.
On the mechanisms limiting mobility in InP/InGaAs buried channel nMISFETs
作者:
Y. Urabe
a
;
T. Yasuda
a
;
yasuda-t@aist.go.jp"" rel=""nofollow
;
H. Ishii
a
;
T. Itatani
a
;
N. Miyata
a
;
H. Yamada
a
;
N. Fukuhara
b
;
M. Hata
b
;
M. Takenaka
c
;
S. Takagi
c
关键词:
MISFET
;
Buried channel
;
InP
;
InGaAs
;
Al
2
O
3
;
Mobility
刊名:Microelectronic Engineering
出版年:2011
10.
Highly p-typed superlattices consist of undoped InAs and carbon-doped GaAs layers
作者:
Kazuo Uchida
;
uchida@ee.uec.ac.jp
;
Heisuke Kanaya
;
Hiroshi Imanishi
;
Atushi Koizumi
;
Shinji Nozaki
关键词:
A1. Characterization
;
A1. Interfaces
;
A3. Low press. Metalorganic vapor phase epitaxy
;
B1. Semiconducting III&ndash
;
V materials
;
B3. Bipolar transistor
刊名:Journal of Crystal Growth
出版年:2013
1
2
3
4
5
6
7
8
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