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SpringerLink电子期刊(8)
Elsevier电子期刊(15)
ACS电子期刊(1)
在“
Elsevier电子期刊
”中,
命中:
15
条,耗时:小于0.01 秒
在所有数据库中总计命中:
24
条
1.
Realization of Silicon nanotube tunneling
FET
on
junctionless
structure using single and multiple gate workfunction
作者:
R. Ambika
a
;
omambika3@gmail.com
;
N. Keerthana
b
;
keerthanaec12@gmail.com
;
R. Srinivasan
a
;
srinivasanr@ssn.edu.in
关键词:
Tunnel
FET
;
Junctionless
Silicon nanotube
;
Single gate workfunction
刊名:Solid-State Electronics
出版年:2017
2.
Analytical modeling of subthreshold characteristics of ion-implanted symmetric double gate
junctionless
field effect transistors
作者:
Balraj Singh
balraj.bits@gmail.com
;
Deepti Gola
er.deeptigola@gmail.com
;
Kunal Singh
kunals.rs.ece@itbhu.ac.in
;
Ekta Goel
ekta.goel.ece11@iitbhu.ac.in
;
Sanjay Kumar
sanjay.kumar.ece11@iitbhu.ac.in
;
Satyabrata Jit
;
sjit.ece@iitbhu.ac.in
关键词:
Junctionless
FET
;
Double-gate
;
Gaussian-like doping
;
Short channel effects
;
Subthreshold current
;
Subthreshold swing
刊名:Materials Science in Semiconductor Processing
出版年:2017
3.
Representation of strained gate-all-around
junctionless
tunneling nanowire filed effect transistor for analog applications
作者:
Rouzbeh Molaei Imen Abadi
rmolaei@iaurasht.ac.ir" class="auth_mail" title="E-mail the corresponding author
;
Seyed Ali Sedigh Ziabari
;
sedigh@iaurasht.ac.ir" class="auth_mail" title="E-mail the corresponding author
关键词:
Junctionless
tunnel field effect transistor
;
Strain
;
Band-to-band tunneling
;
Cut-off-frequency
刊名:Microelectronic Engineering
出版年:2016
4.
Asymmetric dual-gate tunneling
FET
with improved performance
作者:
Ying Wang
a
;
wangying7711@yahoo.com" class="auth_mail" title="E-mail the corresponding author
;
Yan-fu Wang
b
;
Wei Xue
b
;
Fei Cao
a
关键词:
High-κ dielectric material
;
Dual material gate (DMG)
;
Junctionless
field effect transistor (JL
FET
)
;
Tunnel field effect transistor (T
FET
)
刊名:Superlattices and Microstructures
出版年:2016
5.
Improved analog/RF performance of double gate
junctionless
MOS
FET
using both gate material engineering and drain/source extensions
作者:
E. Chebaki
a
;
F. Djeffal
a
;
b
;
faycal.djeffal@univ-batna.dz" class="auth_mail" title="E-mail the corresponding author
;
faycaldzdz@hotmail.com" class="auth_mail" title="E-mail the corresponding author
;
H. Ferhati
a
;
T. Bentrcia
c
关键词:
Analog/RF
;
Gate engineering
;
D/S extensions
;
Junctionless
;
Optimization
;
DG MOS
FET
刊名:Superlattices and Microstructures
出版年:2016
6.
Effect of uniaxial strain on electrical properties of CNT-based
junctionless
field-effect transistor: Numerical study
作者:
Parisa Pourian
pourianp@yahoo.com" class="auth_mail" title="E-mail the corresponding author
;
Reza Yousefi
;
r.yousefi@iaunour.ac.ir" class="auth_mail" title="E-mail the corresponding author
;
Seyed Saleh Ghoreishi
s.ghoreishi@iaunour.ac.ir" class="auth_mail" title="E-mail the corresponding author
关键词:
Carbon nanotube
;
Field effect transistors
;
Junctionless
transistors
;
Non-equilibrium Green's function
刊名:Superlattices and Microstructures
出版年:2016
7.
Tri-gate InGaAs-OI
junctionless
FET
s with PE-ALD Al
2
O
3
gate dielectric and H
2
/Ar anneal
作者:
Vladimir Djara
;
vdj@zurich.ibm.com" class="auth_mail" title="E-mail the corresponding author
;
Lukas Czornomaz
;
Veeresh Deshpande
;
Nicolas Daix
;
Emanuele Uccelli
;
Daniele Caimi
;
Marilyne Sousa
;
Jean Fompeyrine
刊名:Solid State Electronics
出版年:2016
8.
Trans-capacitance modeling in
junctionless
gate-all-around nanowire
FET
s
作者:
Farzan Jazaeri
;
Farzan.jazaeri@epfl.ch" class="auth_mail
;
Lucian Barbut
;
Jean-Michel Sallese
关键词:
AC analysis
;
Trans-capacitance
;
Compact model
;
Gate-all-around
;
Nanowire
;
Junctionless
刊名:Solid-State Electronics
出版年:June 2014
9.
Junctionless
silicon nanowire transistors for the tunable operation of a highly sensitive, low power sensor
作者:
Elizabeth Buitrago
a
;
elizabeth.buitrago@epfl.ch
Author Vitae
;
Giorgos Fagas
b
;
georgios.fagas@tyndall.ie
Author Vitae
;
Montserrat Ferná
;
ndez-Bolañ
;
os Badia
a
;
montserrat.fernandez-bolanos@epfl.ch
Author Vitae
;
Yordan M. Georgiev
c
;
yordan.georgiev@tyndall.ie
Author Vitae
;
Matthieu Berthomé
;
a
;
matthieu.berthome@epfl.ch
Author Vitae
;
Adrian Mihai Ionescu
a
;
adrian.ionescu@epfl.ch
Author Vitae
关键词:
SiNW
;
silicon nanowire
;
FET
;
field effect transistors
;
S/V
;
surface to volume ratio
;
JNT
;
junctionless
transistor
;
Vth
;
threshold voltage
;
¦År
;
dielectric constant
;
TCAD
;
Technology Computer Aided Design
;
Nd
;
Nch
;
channel doping concentration
;
Fw
;
fin wid
刊名:Sensors and Actuators B: Chemical
出版年:2013
10.
Numerical investigation on the
junctionless
nanowire
FET
作者:
E. Gnani
a
;
egnani@arces.unibo.it
;
A. Gnudi
a
;
S. Reggiani
a
;
G. Baccarani
a
;
N. Shen
b
;
N. Singh
b
;
G.Q. Lo
b
;
D.L. Kwong
b
关键词:
Junctionless
field-effect transistor (JL-
FET
)
;
Nanowire field-effect transistor (NW-
FET
)
;
Depletion-mode
FET
刊名:Solid-State Electronics
出版年:2012
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