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SpringerLink电子期刊(9)
Elsevier电子期刊(39)
ACS电子期刊(7)
在“
Elsevier电子期刊
”中,
命中:
39
条,耗时:0.0269606 秒
在所有数据库中总计命中:
55
条
1.
Thick
nonpolar
m-plane and semipolar
GaN
on an ammonothermal seed by tri-halide vapor-phase epitaxy using GaCl
3
作者:
Kenji Iso
;
isokenji@cc.tuat.ac.jp
;
Karen Matsuda
;
Nao Takekawa
;
Kazuhiro Hikida
;
Naoto Hayashida
;
Hisashi Murakami
;
Akinori Koukitu
关键词:
A1. Substrates
;
A3. Hydride vapor-phase epitaxy
;
B1. Nitrides
;
B2. Semiconducting III-V materials
刊名:Journal of Crystal Growth
出版年:2017
2.
Epitaxial growth of
nonpolar
GaN
films
on r-plane sapphire substrates by pulsed laser deposition
作者:
Weijia Yang
a
;
Wenliang Wang
a
;
Haiyan Wang
a
;
Yunnong Zhu
a
;
Guoqiang Li
a
;
b
;
c
;
msgli@scut.edu.cn" class="auth_mail" title="E-mail the corresponding author
关键词:
Nonpolar
GaN
films
;
r-plane sapphire
;
Pulsed laser deposition
;
Interfacial layer
刊名:Materials Science in Semiconductor Processing
出版年:2016
3.
Current mapping of
nonpolar
a-plane and polar c-plane
GaN
films
by conductive atomic force microscopy
作者:
Shengrui Xu
a
;
shengruixidian@126.com" class="auth_mail" title="E-mail the corresponding author
;
Teng Jiang
a
;
Zhiyu Lin
a
;
Ying Zhao
a
;
Linan Yang
a
;
Jincheng Zhang
a
;
jchzhang@xidian.edu.cn" class="auth_mail" title="E-mail the corresponding author
;
Peixian Li
b
;
c
;
Yue Hao
a
关键词:
A1. Crystal morphology
;
A3. Metalor
gan
ic chemical vapor deposition
;
B1. Nitrides
;
B2. Semiconducting III&ndash
;
V materials
刊名:Journal of Crystal Growth
出版年:2016
4.
Formation of two-dimensional SiNx layers on
GaN
nonpolar
surfaces
作者:
Rafael Gonzá
;
lez-Herná
;
ndez
;
rhernandezj@uninorte.edu.co" class="auth_mail" title="E-mail the corresponding author
;
Alvaro Gonzá
;
lez-Garcia
;
Gustavo Martí
;
nez
;
William Ló
;
pez-Perez
关键词:
Atomic layer epitaxy
;
Nonpolar
surfaces
;
Nanostructures
;
Surface energy
;
Gallium nitride
;
Density functional theory
刊名:Thin Solid
Films
出版年:2016
5.
Structural and optical characterization of
nonpolar
(10-10) m-InN/m-
GaN
epilayers grown by PAMBE
作者:
Shruti Mukundan
a
;
shruti1988@gmail.com" class="auth_mail" title="E-mail the corresponding author
;
Greeshma Chandan
a
;
Lokesh Mohan
a
;
Basanta Roul
a
;
b
;
S.B. Krupanidhi
a
;
sbk@mrc.iisc.ernet.in" class="auth_mail" title="E-mail the corresponding author
关键词:
A1. Atomic force microscopy
;
A1. High resolution X-ray diffraction
;
A3. Molecular beam epitaxy
;
B1. Nitrides
;
B2. Semiconducting III&ndash
;
V materials
刊名:Journal of Crystal Growth
出版年:2016
6.
Characteristics of a-plane
GaN
films
grown on optimized silicon-dioxide-patterned r-plane sapphire substrates
作者:
Ji-Su Son
;
Yoshio Honda
;
Masahito Yamaguchi
;
Hiroshi Amano
;
Kwang Hyeon Baik
;
Yong Gon Seo
;
Sung-Min Hwang
关键词:
EPISS
;
Nonpolar
;
a-plane
GaN
;
r-plane sapphire
;
SiO2 pattern
刊名:Thin Solid
Films
出版年:2013
7.
Investigation of blue luminescence in Mg-doped
nonpolar
a-plane
GaN
作者:
Hogyoung Kim
;
Keun Man Song
关键词:
Blue luminescence
;
a-plane
GaN
;
Donor-acceptor pair
;
Potential fluctuations
;
Mg doping
刊名:Journal of Luminescence
出版年:January, 2014
8.
Nonpolar
a-
GaN
epilayers with reduced defect density using patterned r-plane sapphire substrates
作者:
Bo Hyun Kong
;
Byung Oh. Jung
;
Hyung Koun Cho
;
Geunho Yoo
;
Okhyun Nam
关键词:
Planar defects
;
Crystal structure
;
Metalor
gan
ic chemical vapor deposition
;
Nitrides
;
Semiconducting III&ndash
;
V materials
刊名:Thin Solid
Films
出版年:2013
9.
Growth and characterization of a-plane (110)
GaN
films
on (010) LiGaO
2
substrate by chemical vapor deposition
作者:
Mitch M.C. Chou
;
mitch@faculty.nsysu.edu.tw
;
Chenlong Chen
;
Chunyu Chang
;
Chu-An Li
关键词:
A1. X-ray diffraction
;
A3. Chemical vapor deposition processes
;
B1. Nitrides
;
B2. Semiconducting III-V materials
刊名:Journal of Crystal Growth
出版年:2013
10.
High quality a-plane
GaN
films
grown on cone-shaped patterned r-plane sapphire substrates
作者:
Y.Q. Sun
a
;
Z.H. Wu
a
;
zhihao.wu@mail.hust.edu.cn
;
J. Yin
a
;
Y.-Y. Fang
a
;
H. Wang
a
;
C.H. Yu
a
;
Xiong Hui
a
;
C.Q. Chen
a
;
Q.Y. Wei
b
;
T. Li
b
;
K.W. Sun
b
;
F.A. Ponce
b
关键词:
Nonpolar
gallium nitride
;
Patterned sapphire substrate
;
Metal-or
gan
ic chemical vapor deposition
;
X-ray diffraction
;
Transmission electron microscopy
;
Cathodoluminescence
刊名:Thin Solid
Films
出版年:2011
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