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内部出版物
SpringerLink电子期刊(3)
Elsevier电子期刊(10)
在“
Elsevier电子期刊
”中,
命中:
10
条,耗时:小于0.01 秒
在所有数据库中总计命中:
13
条
1.
Characterization and modelling of layout effects in SiGe channel pMOSFETs from 14 nm
UTBB
FDSOI
technology
作者:
R. Berthelon
a
;
b
;
c
;
remy.berthelon@st.com
;
F. Andrieu
b
;
francois.andrieu@cea.fr
;
S. Ortolland
a
;
R. Nicolas
a
;
T. Poiroux
b
;
E. Baylac
a
;
D. Dutartre
a
;
E. Josse
a
;
A. Claverie
c
;
M. Haond
a
关键词:
CMOS
;
Ultra-Thin-Body and Buried-Oxide Fully-Depleted-On-Insulator (
UTBB
FDSOI
)
;
SiGe
;
Stress
;
Strain
;
Layout effects
;
Length of diffusion (LOD)
;
SA/SB parameters
;
Threshold voltage
;
Mobility
刊名:Solid-State Electronics
出版年:2017
2.
UTBB
FDSOI
suitability for IoT applications: Investigations at device, design and architectural levels
作者:
Florent Berthier
a
;
b
;
florent.berthier@cea.fr" class="auth_mail" title="E-mail the corresponding author
;
Edith Beigne
a
;
Fré
;
dé
;
ric Heitzmann
a
;
Olivier Debicki
a
;
Jean-Fré
;
dé
;
ric Christmann
a
;
Alexandre Valentian
a
;
Olivier Billoint
a
;
Esteve Amat
a
;
1
;
Dominique Morche
a
;
Soundous Chairat
a
;
Olivier Sentieys
b
关键词:
UTBB
FDSOI
;
IoT
;
Asynchronous processor
;
Power estimation
;
MCU
刊名:Solid State Electronics
出版年:2016
3.
Ultra-wide voltage range pulse-triggered flip-flops and register file with tunable energy-delay target in 28 nm
UTBB
-
FDSOI
作者:
Sé
;
bastien Bernard
a
;
b
;
c
;
Marc Belleville
a
;
b
;
marc.belleville@cea.fr" class="auth_mail" title="E-mail the corresponding author
;
Jean-Didier Legat
c
;
Alexandre Valentian
a
;
b
;
David Bol
c
关键词:
CMOS digital circuits
;
Standard-cell
;
FDSOI
;
Ultra wide voltage range
;
Pulsed flip-flop
;
Low-voltage
;
Delay generator
;
Register file
刊名:Microelectronics Journal
出版年:2016
4.
Performance vs. reliability adaptive body bias scheme in 28 nm & 14 nm
UTBB
FDSOI
nodes
作者:
C. Ndiaye
a
;
b
;
cheikh.ndiaye@st.com" class="auth_mail" title="E-mail the corresponding author
;
V. Huard
a
;
X. Federspiel
a
;
F. Cacho
a
;
A. Bravaix
b
关键词:
FDSOI
;
Ring oscillator
;
Body bias
;
HCI
;
BTI
刊名:Microelectronics Reliability
出版年:2016
5.
UTBB
FDSOI
: Evolution and opportunities
作者:
Stephane Monfray
;
stephane.monfray@st.com" class="auth_mail" title="E-mail the corresponding author
;
Thomas Skotnicki
thomas.skotnicki@st.com" class="auth_mail" title="E-mail the corresponding author
关键词:
FDSOI
;
Thin Body
;
Thin BOX
;
Back biasing
;
IoT
;
Sensors
;
3D integration
刊名:Solid State Electronics
出版年:2016
6.
Body Bias usage in
UTBB
FDSOI
designs: A parametric exploration approach
作者:
Diego Puschini
;
Jorge Rodas
;
Edith Beigne
;
Mauricio Altieri
;
Suzanne Lesecq
刊名:Solid State Electronics
出版年:2016
7.
A band-modulation device in advanced
FDSOI
technology: Sharp switching characteristics
作者:
Hassan El Dirani
a
;
b
;
hassan.eldirani1@st.com" class="auth_mail" title="E-mail the corresponding author
;
Yohann Solaro
b
;
Pascal Fonteneau
a
;
Charles-Alex Legrand
a
;
David Marin-Cudraz
a
;
Dominique Golanski
a
;
Philippe Ferrari
b
;
Sorin Cristoloveanu
b
刊名:Solid State Electronics
出版年:2016
8.
Properties and mechanisms of Z
2
-FET at variable temperature
作者:
Hassan El Dirani
a
;
b
;
hassan_dir@hotmail.com" class="auth_mail" title="E-mail the corresponding author
;
Yohann Solaro
b
;
Pascal Fonteneau
a
;
Philippe Ferrari
b
;
Sorin Cristoloveanu
b
刊名:Solid State Electronics
出版年:2016
9.
Transistors on hybrid
UTBB
/Bulk substrates fabricated by local internal BOX dissolution
作者:
P. Nguyen
;
F. Andrieu
;
M. Cass茅
;
C. Tabone
;
P. Perreau
;
D. Lafond
;
H. Dansas
;
L. Tosti
;
C. Veytizou
;
D. L
;
ru
;
O. Kononchuk
;
E. Guiot
;
B.-Y. Nguyen
;
O. Faynot
;
T. Poiroux
关键词:
Local internal BOX dissolution
;
Hybrid
UTBB
/Bulk substrate
;
FDSOI
;
ESD protection
;
Diodes
刊名:Solid-State Electronics
出版年:December, 2013
10.
Z
2
-FET: A promising
FDSOI
device for ESD protection
作者:
Yohann Solaro
a
;
b
;
c
;
costin.anghel@isep.fr" class="auth_mail
;
Jing Wan
c
;
Pascal Fonteneau
a
;
Claire Fenouillet-Beranger
b
;
Cyrille Le Royer
b
;
Alexander Zaslavsky
d
;
Philippe Ferrari
c
;
Sorin Cristoloveanu
c
刊名:Solid-State Electronics
出版年:July 2014
1
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