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在“
Elsevier电子期刊
”中,
命中:
3,817
条,耗时:0.1429331 秒
在所有数据库中总计命中:
6,503
条
1.
Doping of
semiconductors
by molecular monolayers: monolayer formation, dopant diffusion and applications
作者:
Liang Ye
a
;
b
;
Michel P. de Jong
b
;
Tibor Kudernac
a
;
Wilfred G.
v
an der Wiel
b
;
Jurriaan Huskens
a
;
j.huskens@utwente.nl" class="auth_mail" title="E-mail the corresponding author
关键词:
Monolayer doping
;
Silicon
;
Germanium
;
Group III-
V
semiconductors
;
Dopant
;
Transistor
刊名:Materials Science in Semiconductor Processing
出版年:2017
2.
Bi
V
O
4
nanowires decorated with CdS nanoparticles as Z-scheme photocatalyst with enhanced H
2
generation
作者:
Fan Qi Zhou
a
;
Jin Chen Fan
a
;
Jinchen_Jin@gmail.com" class="auth_mail" title="E-mail the corresponding author
;
Qun Jie Xu
a
;
xuqunjie@shiep.edu.cn" class="auth_mail" title="E-mail the corresponding author
;
Yu Lin Min
a
;
b
;
ahaqmylin@126.com" class="auth_mail" title="E-mail the corresponding author
关键词:
Bi
V
O4 nanowires
;
CdS
;
Z-scheme
;
Photocatalytic H2 generation
;
V
isible light
刊名:Applied Catalysis B: En
v
ironmental
出版年:2017
3.
N-type doping strategies for InGaAs
作者:
Henry Aldridge Jr
a
;
;
Aaron G. Lind
a
;
Cory C. Bomberger
b
;
Ye
v
geniy Puzyre
v
c
;
Joshua M.O. Zide
b
;
Sokrates T. Pantelides
c
;
Mark E. Law
a
;
Ke
v
in S. Jones
a
关键词:
III&ndash
;
V
semiconductors
;
Semiconductor processing
;
Thermal processing
;
Dopant acti
v
ation
;
Dopant diffusion
刊名:Materials Science in Semiconductor Processing
出版年:2017
4.
Properties of InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors modified by surface treatment
作者:
D. Gregu&scaron
;
o
v
á
;
a
;
Dagmar.Greguso
v
a@sa
v
ba.sk
;
elekgreg@sa
v
ba.sk
;
F. Gucmann
a
;
R. Kú
;
dela
a
;
M. Miču&scaron
;
í
;
k
b
;
R. Stoklas
a
;
L.
V
á
;
lik
a
;
J. Gregu&scaron
;
c
;
M. Blaho
a
;
P. Kordo&scaron
;
d
关键词:
Surface treatment
;
III&ndash
;
V
Semiconductors
;
Gallium arsenide
;
Heterostructure field effect transistors
;
Transistor characteristics
;
Trap state density
刊名:Applied Surface Science
出版年:2017
5.
Room temperature current-
v
oltage (I-V) characteristics of Ag/InGaN/n-Si Schottky barrier diode
作者:
Erman Erdoğan
a
;
e.erdogan@alparslan.edu.tr
;
Mutlu Kundakç
;
ı
b
关键词:
Current-
v
oltage characteristics
;
Ag Schottky contact
;
InGaN
;
Room temperature
;
Schottky barrier diode
;
Thermionic
v
acuum arc (TVA)
刊名:Physica B: Condensed Matter
出版年:2017
6.
Stability and properties of the friendly en
v
ironmental Zintl phases: Ca
3
Si
4
and Ca
14
Si
19
作者:
Adrien Moll
a
;
Romain
V
iennois
a
;
Patrick Hermet
a
;
Abel Haidoux
a
;
Jean-Louis Bantignies
b
;
Mickaë
;
l Beaudhuin
a
;
mickael.beaudhuin@umontpellier.fr
关键词:
Semiconductors
;
Stability
;
Raman spectroscopy
;
Ab initio calculation
;
Phase diagram
刊名:Acta Materialia
出版年:2017
7.
Compositing effects of CuBi
2
O
4
on
v
isible-light responsi
v
e photocatalysts
作者:
Masami Nishikawa
;
nishikawa@
v
os.nagaokaut.ac.jp" class="auth_mail" title="E-mail the corresponding author
;
Soichiro Yuto
;
Takahiro Hasegawa
;
Wataru Shiroishi
;
Hou Honghao
;
Yukihiro Nakabayashi
;
Yoshio Nosaka
;
Nobuo Saito
关键词:
Photocatalyst
;
Composite
;
z-scheme
;
CuBi2O4
;
WO3
;
Bi
V
O4
刊名:Materials Science in Semiconductor Processing
出版年:2017
8.
Synergistic effect of p-n heterojunction, supporting and zeolite nanoparticles in enhanced photocatalytic acti
v
ity of NiO and SnO
2
作者:
Hadis Derik
v
andi
a
;
b
;
Alireza Nezamzadeh-Ejhieh
a
;
b
;
c
;
arnezamzadeh@iaush.ac.ir
关键词:
Clinoptilolite nanoparticles
;
Metronidazole
;
NiO-SnO2
;
Heterogeneous photocatalysis
刊名:Journal of Colloid and Interface Science
出版年:2017
9.
Process modules for GeSn nanoelectronics with high Sn-contents
作者:
C. Schulte-Braucks
a
;
c.schulte-Braucks@fz-juelich.de
;
S. Glass
a
;
E. Hofmann
a
;
D. Stange
a
;
N.
v
on den Driesch
a
;
J.M. Hartmann
b
;
c
;
Z. Ikonic
d
;
Q.T. Zhao
a
;
D. Buca
a
;
S. Mantl
a
关键词:
GeSn
;
MOSFET
;
High-k/metal gate
;
NiGeSn
刊名:Solid-State Electronics
出版年:2017
10.
Heterostructures construction on TiO
2
nanobelts: A powerful tool for building high-performance photocatalysts
作者:
Xiaofei Zhang
a
;
1
Author
V
itae
;
Yana Wang
a
;
1
Author
V
itae
;
Baishan Liu
b
Author
V
itae
;
Yuanhua Sang
a
;
sangyh@sdu.edu.cn" class="auth_mail" title="E-mail the corresponding author
Author
V
itae
;
Hong Liu
a
;
b
;
hongliu@sdu.edu.cn" class="auth_mail" title="E-mail the corresponding author
Author
V
itae
关键词:
TiO2-based NSHs
;
Photocatalysis
;
Acti
v
e surface
;
Charge separation
;
Light absorption
刊名:Applied Catalysis B: En
v
ironmental
出版年:2017
1
2
3
4
5
6
7
8
9
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