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Elsevier电子期刊(10)
在“
Elsevier电子期刊
”中,
命中:
10
条,耗时:0.0239571 秒
在所有数据库中总计命中:
10
条
1.
Nonradiative centers in InAs quantum dots revealed by two-wavelength excited photoluminescence
作者:
N. Kamata
;
S. Saravanan
;
J.M.
Zanardi
Ocampo
;
P.O. Vaccaro and Y. Arakawa
关键词:
Quantum dot
;
Photoluminescence
;
Nonradiative recombination center
;
Two-wavelength excitation
刊名:Physica B
出版年:2006
2.
Lateral junctions for high-density integration of optoelectronic devices
作者:
Vaccaro
;
P.O.
;
Dharmarasu
;
N.
;
Saravanan
;
S.
;
Zanardi
Ocampo
;
J.M.
;
Kubota
;
K.
;
Saito
;
N.
关键词:
73.40Kp
;
72.80Ey
;
73.61Ey
;
78.66Fd
;
GaAs (311)A
;
LED array
;
Si-doping
;
MBE
刊名:Physica E
出版年:2004
3.
Si doped p- and n-type Al
x
Ga
1−x
As epilayers for high density lateral-junction LED arrays on (3 1 1)A patterned substrate
作者:
Saravanan
;
S.
;
Dharmarasu
;
N.
;
Vaccaro
;
P.O.
;
Zanardi
Ocampo
;
J.M.
;
Kubota
;
K.
;
Saito
;
N.
关键词:
Si-doping
;
MBE
;
(311)A Patterned substrate
;
LED arrays
;
I&ndash
;
V
;
E&ndash
;
L
刊名:Solid-State Electronics
出版年:2004
4.
Optimization of InAs quantum dots formation on (311)A substrate
作者:
Saravanan
;
S.
;
Vaccaro
;
P.O.
;
Zanardi
Ocampo
;
J.M.
;
Perissol
;
C.
;
Kubota
;
K.
;
Saito
;
N.
刊名:Journal of Crystal Growth
出版年:2005
5.
Characterization of GaAs-based micro-origami mirrors by optical actuation
作者:
José
;
M.
Zanardi
Ocampo
;
Pablo O. Vaccaro
;
Kazuyoshi Kubota
;
Thomas Fleischmann
;
Te-Sheng Wang
;
Tahito Aida
;
Toshiaki Ohnishi
;
Akira Sugimura
;
Ryo Izumoto
;
Makoto Hosoda
;
Shigeki Nashima
刊名:Microelectronic Engineering
出版年:2005
6.
Lateral p–n junctions for high-density LED arrays
作者:
Vaccaro
;
Pablo O.
;
Vorobev
;
A.
;
Dharmarasu
;
N.
;
Fleischmann
;
T.
;
Zanardi
Ocampo
;
J.M.
;
Saravanan
;
S.
;
et. al.
关键词:
Lateral p&ndash
;
n junction
;
Molecular-beam epitaxy
;
Light-emitting diode
刊名:Microelectronics Journal
出版年:2003
7.
Below-gap recombination dynamics in GaN revealed by time-resolved and two-wavelength excited photoluminescence
作者:
Kamata
;
N.
;
Zanardi
Ocampo
;
J.M.
;
Okamoto
;
W.
;
Hoshino
;
K.
;
Someya
;
T.
;
Arakawa
;
Y.
;
Yamada
;
K.
关键词:
GaN
;
Photoluminescence
;
Nonradiative recombination
;
Yellow luminescence
;
Below-gap excitation
刊名:Materials Science and Engineering: B
出版年:2002
8.
Spectroscopy of non-radiative recombination centers in quantum wells by two-wavelength excited photoluminescence
作者:
Zanardi
Ocampo
;
J.M.
;
Kamata
;
N.
;
Hoshino
;
K.
;
Endoh
;
K.
;
Yamada
;
K.
;
Nishioka
;
M.
;
Someya
;
T.
;
et. al.
关键词:
Photoluminescence
;
Trap centers
;
AlGaAs
;
InGaN
刊名:Journal of Luminescence
出版年:2000
9.
Spectroscopic discrimination of non-radiative centers in quantum wells by two wavelength excited photoluminescence
作者:
Zanardi
Ocampo
;
J.M.
;
Kamata
;
N.
;
Hoshino
;
K.
;
Hirasawa
;
M.
;
Yamada
;
K.
;
Nishioka
;
M.
;
Arakawa
;
Y.
关键词:
78.55
;
Photoluminescence
;
Deep levels
;
Nonradiative recombination
;
Quantum well
;
AlGaAs
刊名:Journal of Crystal Growth
出版年:2000
10.
Absence of nonradiative recombination centers in modulation-doped quantum wells revealed by two-wavelength excited photoluminescence
作者:
Hoshino
;
K.
;
Ocampo
;
J.M.
Zanardi
;
Kamata
;
N.
;
Yamada
;
K.
;
Nishioka
;
M.
;
Arakawa
;
Y.
关键词:
78.55
;
Below-gap excitation
;
Nonradiative recombination
;
Quantum well
;
Modulation doping
刊名:Physica E
出版年:2000
1
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