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在“
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”中,
命中:
6,877
条,耗时:小于0.01 秒
在所有数据库中总计命中:
9,771
条
1.
The Effect of the number of
InGa
N/GaN pairs on the photoelectrochemical properties of InGaN/GaN multi quantum wells
作者:
Hyojung Bae
a
;
Jun-Beom Park
a
;
Katsushi Fujii
b
;
Hyo-Jong Lee
c
;
Sang-Hyun Lee
d
;
Sang-Wan Ryu
a
;
June Key Lee
a
;
Jun-Seok Ha
a
;
jsha@jnu.ac.kr
关键词:
Hydrogen generation
;
InGa
N/GaN
;
Multi quantum well
;
Photoelectrochemistry
;
Water splitting
刊名:Applied Surface Science
出版年:2017
2.
Strain and microstructures of GaN epilayers with thick
InGa
N interlayer grown by MOCVD
作者:
Jianxun Liu
;
Hongwei Liang
;
hwliang@dlut.edu.cn
;
Yang Liu
;
Xiaochuan Xia
;
Huolin Huang
;
Pengcheng Tao
;
Qasim Abbas Sandhu
;
Rensheng Shen
;
Yingmin Luo
;
Guotong Du
关键词:
GaN
;
InGa
N interlayer
;
Strain
;
Microstructure
刊名:Materials Science in Semiconductor Processing
出版年:2017
3.
DC and RF characterization of
InGa
As replacement metal gate (RMG) nFETs on SiGe-OI FinFETs fabricated by 3D monolithic integration
作者:
V. Deshpande
a
;
VEE@zurich.ibm.com
;
V. Djara
a
;
E. O'Connor
a
;
P. Hashemi
b
;
K. Balakrishnan
b
;
D. Caimi
a
;
M. Sousa
a
;
L. Czornomaz
a
;
J. Fompeyrine
a
关键词:
3D monolithic
;
InGa
As
;
RMG
;
High-frequency
;
FinFET
刊名:Solid-State Electronics
出版年:2017
4.
Improving
InGa
N heterojunction solar cells efficiency using a semibulk absorber
作者:
M. Arif
a
;
b
;
;
W. Elhuni
c
;
J. Streque
a
;
S. Sundaram
a
;
S. Belahsene
d
;
Y. El Gmili
a
;
M. Jordan
a
;
e
;
X. Li
a
;
e
;
G. Patriarche
d
;
A. Slaoui
f
;
A. Migan
c
;
R. Abderrahim
d
;
Z. Djebbour
c
;
g
;
P.L. Voss
a
;
e
;
J.P. Salvestrini
a
;
b
;
jean-paul.salvestrini@univ-lorraine.fr" class="auth_mail" title="E-mail the corresponding author
;
A. Ougazzaden
a
;
e
关键词:
InGa
N
;
Solar cells
;
Semibulk
刊名:Solar Energy Materials and Solar Cells
出版年:2017
5.
Nebular
inga
ssing as a source of volatiles to the Terrestrial planets
作者:
Zachary D. Sharp
zsharp@unm.edu
关键词:
Nebular
inga
ssing
;
Volatiles
;
Hydrogen isotope
;
Chondrites
;
Source of volatiles
;
Late delivery
刊名:Chemical Geology
出版年:2017
6.
Multiband
InGa
N nanowires with enhanced visible photon absorption for efficient photoelectrochemical water splitting
作者:
M. Gopalakrishnan
a
;
S. Gopalakrishnan
a
;
G.M. Bhalerao
b
;
K. Jeganathan
a
;
kjeganathan@yahoo.com
;
jagan@physics.bdu.ac.in
关键词:
InGa
N nanowires
;
Chemical vapour deposition
;
Photoanode
;
Photoelectrochemical water splitting
;
Light absorption
;
Charge carrier diffusion
刊名:Journal of Power Sources
出版年:2017
7.
Electronic excitation induced structural and optical modifications in
InGa
N/GaN quantum well structures grown by MOCVD
作者:
K. Prabakaran
a
;
R. Ramesh
a
;
M. Jayasakthi
a
;
S. Surender
a
;
S. Pradeep
a
;
M. Balaji
c
;
K. Asokan
d
;
K. Baskar
a
;
b
;
drbaskar2009@gmail.com
;
karanphy07@gmail.com
关键词:
InGa
N
;
Quantum well
;
Electronic excitation
;
Intermixing effects
;
Photoluminescence
刊名:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
出版年:2017
8.
Temperature-dependent Raman scattering in cubic (
InGa
)
2
O
3
thin films
作者:
Xu Wang
;
Zhengwei Chen
;
Katsuhiko Saito
;
Tooru Tanaka
;
Mitsuhiro Nishio
;
Qixin Guo
;
guoq@cc.saga-u.ac.jp" class="auth_mail" title="E-mail the corresponding author
关键词:
(
InGa
)2O3 film
;
Pulsed laser deposition
;
Raman scattering
;
Temperature coefficients
刊名:Journal of Alloys and Compounds
出版年:2017
9.
Back-gated
InGa
As-on-insulator lateral N
+
NN
+
MOSFET: Fabrication and typical conduction mechanisms
作者:
H.J. Park
a
;
hyungjin.park@imep.grenoble-inp.fr
;
L. Pirro
a
;
L. Czornomaz
b
;
I. Ionica
a
;
M. Bawedin
a
;
V. Djara
b
;
V. Deshpande
b
;
S. Cristoloveanu
a
关键词:
III&ndash
V ;
InGa
As
;
SOI
;
pseudo-MOSFET
;
MOSFET
;
Wafer bonding
;
Carrier mobility
;
Strain
;
Selective regrowth
刊名:Solid-State Electronics
出版年:2017
10.
Unintentional gallium incorporation in
InGa
N layers during epitaxial growth
作者:
Kun Zhou
a
;
zhoukun2011@sinano.ac.cn
;
Huaijin Ren
a
;
Masao Ikeda
b
;
Jianping Liu
b
;
Yi Ma
a
;
Songxin Gao
a
;
Chun Tang
a
;
Deyao Li
b
;
Liquan Zhang
b
;
Hui Yang
b
关键词:
Unintentional incorporation
;
Metalorganic vapor phase epitaxy
;
InGa
N
;
Growth rate
;
Surface morphology
刊名:Superlattices and Microstructures
出版年:2017
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