设为首页
收藏本站
网站地图
|
English
|
公务邮箱
About the library
Background
History
Leadership
Organization
Readers' Guide
Opening Hours
Collections
Help Via Email
Publications
Electronic Information Resources
常用资源
电子图书
期刊论文
学位会议
外文资源
特色专题
内部出版物
在“
Elsevier电子期刊
”中,
命中:
13
条,耗时:0.0649643 秒
1.
Defect and dislocation str
u
ct
u
res in low-temperat
u
re-grown Ge and Ge
ub>1 − x
ub>Sn
ub>x
ub> epitaxial layers on Si(110) s
u
bstrates
作者:
Shohei Kidowaki
up>a
up>
;
Takanori Asano
up>a
up>
up>
;
up>
up>b
up>
;
Yos
u
ke Shim
u
ra
up>a
up>
;
Masashi K
u
rosawa
up>a
up>
up>
;
up>
up>c
up>
;
Noriy
u
ki Taoka
up>a
up>
up>
;
up>
up>1
up>
;
Osam
u
Nakats
u
ka
up>a
up>
up>
;
up>
up>nakat
u
ka@alice.
xtal
.
nagoya
-
u
.
ac
.
jp
" class="a
u
th_mail" title="E-mail the corresponding a
u
thor
up>
;
Shigeaki Zaima
up>a
up>
up>
;
up>
up>c
up>
关键词:
Epitaxial growth
;
Semicond
u
ctor
;
Germani
u
m tin
;
Defect
;
Dislocation
;
Strain
刊名:Thin Solid Films
出版年:2016
2.
Char
ac
terization of crystallinity of Ge
ub>1 ∿x
ub>Sn
ub>x
ub> epitaxial layers grown
u
sing metal-organic chemical vapor deposition
作者:
Y
u
ki In
u
z
u
ka
up>a
up>
;
Shinichi Ike
up>a
up>
up>
;
up>
up>b
up>
;
Takanori Asano
up>a
up>
up>
;
up>
up>b
up>
;
Wakana Take
u
chi
up>a
up>
;
Osam
u
Nakats
u
ka
up>a
up>
up>
;
up>
up>nakat
u
ka@alice.
xtal
.
nagoya
-
u
.
ac
.
jp
" class="a
u
th_mail" title="E-mail the corresponding a
u
thor
up>
;
Shigeaki Zaima
up>a
up>
up>
;
up>
up>c
up>
关键词:
Germani
u
m
;
Tin
;
Epitaxial growth
;
Chemical vapor deposition
;
Metal-organic material
刊名:Thin Solid Films
出版年:2016
3.
Direct growth of s
u
percond
u
cting NdFeAs(O,F) thin films by MBE
作者:
Masashi Chihara
up>a
up>
up>
;
up>
up>chihara@ik
u
.
xtal
.
nagoya
-
u
.
ac
.
jp
" class="a
u
th_mail" title="E-mail the corresponding a
u
thor
up>
;
Naoki S
u
miya
up>a
up>
;
Kenta Arai
up>a
up>
;
Atar
u
Ichinose
up>b
up>
;
Ichiro Ts
u
kada
up>b
up>
;
Takaf
u
mi Hatano
up>a
up>
;
Kaz
u
masa Iida
up>a
up>
;
Hiroshi Ik
u
ta
up>a
up>
关键词:
Molec
u
lar beam epitaxy
;
Iron-based s
u
percond
u
ctor
;
LnFeAs(O
;
F)
;
Epitaxial thin film
;
Oxypnictide
刊名:Physica C: S
u
percond
u
ctivity
出版年:2015
4.
Char
ac
terization of crystalline str
u
ct
u
res of SiGe s
u
bstrate formed by traveling liq
u
id
u
s-zone method for devices with Ge/SiGe str
u
ct
u
res
作者:
Takashi Yamaha
up>a
up>
up>
;
up>
up>tyamaha@alice.
xtal
.
nagoya
-
u
.
ac
.
jp
" class="a
u
th_mail
up>
;
Osam
u
Nakats
u
ka
up>a
up>
;
Noriy
u
ki Taoka
up>a
up>
;
Kyoichi Kinoshita
up>b
up>
;
Shinichi Yoda
up>b
up>
;
Shigeaki Zaima
up>a
up>
关键词:
Silicon germani
u
m
;
Germani
u
m
;
Strain
;
Traveling liq
u
id
u
s-zone
刊名:Thin Solid Films
出版年:30 April, 2014
5.
Epitaxial formation and electrical properties of Ni germanide/Ge(110) cont
ac
ts
作者:
Y
u
nsheng Deng
up>
;
up>
up>ydeng@alice.
xtal
.
nagoya
-
u
.
ac
.
jp
" class="a
u
th_mail
up>
;
Osam
u
Nakats
u
ka
;
J
u
n Yokoi
;
Noriy
u
ki Taoka
;
Shigeaki Zaima
关键词:
Germanide
;
Nickel
;
Epitaxial growth
;
Orientation
;
Schottky barrier height
;
Cont
ac
t
刊名:Thin Solid Films
出版年:30 April, 2014
6.
Formation and char
ac
terization of locally strained Ge
ub>1 鈭?#xa0;x
ub>Sn
ub>x
ub>/Ge microstr
u
ct
u
res
作者:
Shinichi Ike
up>a
up>
up>
;
up>
up>1
up>
up>
;
up>
up>sike@alice.
xtal
.
nagoya
-
u
.
ac
.
jp
" class="a
u
th_mail
up>
;
Yoshihiko Moriyama
up>b
up>
;
Masashi K
u
rosawa
up>a
up>
up>
;
up>
up>c
up>
;
Noriy
u
ki Taoka
up>a
up>
;
Osam
u
Nakats
u
ka
up>a
up>
;
Yas
u
hiko Imai
up>d
up>
;
Shiger
u
Kim
u
ra
up>d
up>
;
Ts
u
tom
u
Tez
u
ka
up>b
up>
;
Shigeaki Zaima
up>a
up>
关键词:
Germani
u
m
;
Tin
;
X-ray microdiffr
ac
tion
;
Strain
;
Epitaxial growth
;
GeSn
;
Finite element method
刊名:Thin Solid Films
出版年:30 April, 2014
7.
Infl
u
ence of Ge s
u
bstrate orientation on crystalline str
u
ct
u
res of Ge
ub>1 鈭?#xa0;x
ub>Sn
ub>x
ub> epitaxial layers
作者:
Takanori Asano
up>a
up>
up>
;
up>
up>tasano@alice.
xtal
.
nagoya
-
u
.
ac
.
jp
" class="a
u
th_mail
up>
;
Shohei Kidowaki
up>a
up>
;
Masashi K
u
rosawa
up>a
up>
up>
;
up>
up>b
up>
;
Noriy
u
ki Taoka
up>a
up>
;
Osam
u
Nakats
u
ka
up>a
up>
;
Shigeaki Zaima
up>a
up>
关键词:
Germani
u
m
;
Tin
;
Epitaxial growth
;
Strain relaxation
;
Ge(111)
;
Ge(110)
刊名:Thin Solid Films
出版年:30 April, 2014
8.
Stabilized formation of tetragonal ZrO
ub>2
ub> thin film with high permittivity
作者:
Kimihiko Kato
up>a
up>
up>
;
up>
up>kkato@alice.
xtal
.
nagoya
-
u
.
ac
.
jp
" class="a
u
th_mail
up>
;
Takatoshi Saito
up>a
up>
up>
;
up>
up>1
up>
;
Shigehisa Shibayama
up>a
up>
up>
;
up>
up>b
up>
up>
;
up>
up>1
up>
;
Mits
u
o Sakashita
up>a
up>
up>
;
up>
up>1
up>
;
Wakana Take
u
chi
up>a
up>
up>
;
up>
up>1
up>
;
Noriy
u
ki Taoka
up>a
up>
up>
;
up>
up>1
up>
;
Osam
u
Nakats
u
ka
up>a
up>
up>
;
up>
up>1
up>
;
Shigeaki Zaima
up>a
up>
up>
;
up>
up>1
up>
关键词:
Higher-k
;
Zr oxide
;
Tetragonal ZrO2
;
Atomic layer deposition
;
Film thickness
;
Lattice sp
ac
ing
;
Stabilization mechanisms
;
Permittivity
刊名:Thin Solid Films
出版年:30 April, 2014
9.
Importance of control of oxidant partial press
u
re on str
u
ct
u
ral and electrical properties of Pr-oxide films
作者:
Kimihiko Kato
up>
;
up>
up>1
up>
up>
;
up>
up>kkato@alice.
xtal
.
nagoya
-
u
.
ac
.
jp
" class="a
u
th_mail
up>
;
Mits
u
o Sakashita
up>1
up>
;
Wakana Take
u
chi
up>1
up>
;
Noriy
u
ki Taoka
up>1
up>
;
Osam
u
Nakats
u
ka
up>1
up>
;
Shigeaki Zaima
up>1
up>
关键词:
Praseodymi
u
m oxide
;
H2O partial press
u
re
;
Annealing
;
Permittivity
;
Valence states
;
Diff
u
sion
;
Phase str
u
ct
u
re
;
Oxygen
刊名:Thin Solid Films
出版年:30 April, 2014
10.
Imp
ac
ts of AlGeO formation by post thermal oxidation of Al
ub>2
ub>O
ub>3
ub>/Ge str
u
ct
u
re on interf
ac
ial properties
作者:
Shigehisa Shibayama
up>a
up>
up>
;
up>
up>b
up>
up>
;
up>
up>ssibayam@alice.
xtal
.
nagoya
-
u
.
ac
.
jp
" class="a
u
th_mail
up>
;
Kimihiko Kato
up>a
up>
;
Mits
u
o Sakashita
up>a
up>
;
Wakana Take
u
chi
up>a
up>
;
Noriy
u
ki Taoka
up>a
up>
;
Osam
u
Nakats
u
ka
up>a
up>
;
Shigeaki Zaima
up>a
up>
关键词:
Al2O3/Ge
;
Thermal oxidation
;
Interf
ac
e state density
;
AlGeO
;
Re
ac
tion mechanism
;
Ac
tivation energy
刊名:Thin Solid Films
出版年:30 April, 2014
1
2
按检索点细分(13)
作者(13)
按出版年细分(13)
2027年及以后(7)
2016年(2)
2015年(1)
2011年(3)
NGLC 2004-2010.National Geological Library of China All Rights Reserved.
Add:29 Xueyuan Rd,Haidian District,Beijing,PRC. Mail Add: 8324 mailbox 100083
For exchange or info please contact us via
email
.