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在“
Elsevier电子期刊
”中,
命中:
1
条,耗时:小于0.01 秒
1.
Characterization of P-channel power trench MOSFETs with polycrystalline silicon germanium gate electrode for faster switching
作者:
Rohit
Dikshit
;
rohitd80
@
gmail
.
com
;
rohit
.dixit@fairchildsemi.
com
;
Manmohan Daggubati
关键词:
Polycrystalline silicon&ndash
;
germanium
;
p-MOSFET gate
;
Switching time reduction
;
Gate resistance
;
Boron doping profile
;
Threshold voltage
;
Boron diffusion
刊名:Solid-State Electronics
出版年:2012
1
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作者(1)
按出版年细分(1)
2012年(1)
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