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CNKI学位论文(3)
知网期刊论文(1)
在“
Elsevier电子期刊
”中，
命中：
7
条，耗时：0.1618928 秒
在所有数据库中总计命中：
4
条
1.
Electrical characteristics of a-
IGZ
O transistors along the in-plane axis during outward bending
作者：
Chang Bum Park
;
bum319@snu.ac.kr"
class
="
auth
_mail" title="E-mail the corresponding
auth
or
;
HyungIl Na
;
Soon Sung Yoo
;
Kwon-Shik Park
关键词：
a-
IGZ
O transistor
;
Bending stress
;
Flexible display
;
Mechanical strain
;
Polyimi
de
substrate
刊名：Microelectronics Reliability
出版年：2016
2.
Non-
de
structive measurement of nitrogen status of leafy ornamental cuttings by near infrared reflectance spectroscopy (NIRS) for assessment of rooting capacity
作者：
Dieter Lohr
a
;
dieter.lohr@hswt.
de
"
class
="
auth
_mail" title="E-mail the corresponding
auth
or
;
Peter Tillmann
b
;
1
;
Peter.Tillmann@vdlufa.
de
"
class
="
auth
_mail" title="E-mail the corresponding
auth
or
;
Siegfried Zerche
c
;
2
;
zerche@erfurt.
igz
ev.
de
"
class
="
auth
_mail" title="E-mail the corresponding
auth
or
;
Uwe Druege
c
;
3
;
druege@erfurt.
igz
ev.
de
"
class
="
auth
_mail" title="E-mail the corresponding
auth
or
;
Thomas Rath
d
;
4
;
t.rath@hs-osnabrueck.
de
"
class
="
auth
_mail" title="E-mail the corresponding
auth
or
;
Elke Meinken
a
;
5
;
elke.meinken@hswt.
de
"
class
="
auth
_mail" title="E-mail the corresponding
auth
or
关键词：
PLSR
;
Partial least square regression
;
Chemometrics
;
Adventitious rooting
刊名：Biosystems Engineering
出版年：2016
3.
A higher sink competitiveness of the rooting zone and invertases are involved in dark stimulation of adventitious root formation in Petunia hybrida cuttings
作者：
Yvonne Klopotek
a
;
Philipp Franken
a
;
Hans-Peter Klaering
b
;
Kerstin Fischer
b
;
Bettina Hause
c
;
Mohammad-Reza Hajirezaei
d
;
Uwe Druege
a
;
druege@erfurt.
igz
ev.
de
"
class
="
auth
_mail" title="E-mail the corresponding
auth
or
关键词：
AR
;
adventitious root
;
cw
;
cell wall
;
cyt
;
cytosolic
;
DM
;
dry matter
;
dpe
;
days post excision
;
dpin
;
days post insertion
;
FW
;
fresh weight
;
INV
;
invertase
;
PN
;
net photosynthesis
;
PPFD
;
photosynthetic photon flux
de
nsity
;
RD
;
dark respiration
;
vac
;
vacuolar
刊名：Plant Science
出版年：2016
4.
Structure and optical properties of [In
1−2x
Sn
x
Zn
x
]GaO
3
(ZnO)
m
作者：
Simon Eichhorn
;
Werner Ma
de
r
;
ma
de
r@uni-bonn.
de
"
class
="
auth
_mail" title="E-mail the corresponding
auth
or
关键词：
Indium gallium tin zinc oxi
de
s
;
Aliovalent substitution
;
Single crystal X-ray diffraction
;
Electron diffraction
刊名：Journal of Solid State Chemistry
出版年：2016
5.
Effects of wavelength and number of bends on the performance of z
igz
ag
de
misters with drainage channels
作者：
M.H. Hamedi Estakhrsar
;
R. Rafee
;
rafee@semnan.ac.ir"
class
="
auth
_mail" title="E-mail the corresponding
auth
or
关键词：
Numerical simulation
;
Z
igz
ag
de
mister
;
Bend wavelength
;
Removal efficiency
;
Number of bends
刊名：Applied Mathematical Mo
de
lling
出版年：2016
6.
DC sputtered amorphous In-Sn-Zn-O thin-film transistors: Electrical properties and stability
作者：
Mitsuru Nakata
a
;
b
;
1
;
Chumin Zhao
a
;
1
;
Jerzy Kanicki
a
;
kanicki@eecs.umich.edu"
class
="
auth
_mail" title="E-mail the corresponding
auth
or
关键词：
Thin-film transistors
;
Amorphous In&ndash
;
Sn&ndash
;
Zn&ndash
O ;
Field-effect mobility
;
Electrical stability
刊名：Solid State Electronics
出版年：2016
7.
Ellipsometry study of process
de
position of amorphous Indium Gallium Zinc Oxi
de
sputtered thin films
作者：
C. Talagrand
a
;
talagrand@emse.fr"
class
="
auth
_mail" title="E-mail the corresponding
auth
or
;
X. Boddaert
a
;
D.G. Selmeczi
b
;
C.
De
franoux
b
;
P. Collot
c
关键词：
InGaZnO
;
Spectroscopic ellipsometry
;
Dielectric function
;
Process
de
position
;
Amorphous semiconductor
刊名：Thin Solid Films
出版年：2015
1
按检索点细分(7)
作者(2)
按出版年细分(7)
2016年(6)
2015年(1)
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