设为首页
收藏本站
网站地图
|
English
|
公务邮箱
About the library
Background
History
Leadership
Organization
Readers' Guide
Opening Hours
Collections
Help Via Email
Publications
Electronic Information Resources
常用资源
电子图书
期刊论文
学位会议
外文资源
特色专题
内部出版物
在“
Elsevier电子期刊
”中,
命中:
42
条,耗时:小于0.01 秒
1.
Evidence of minority carrier traps contribution in deep level transient spectroscopy measurement in n-GaN Schottky diode
作者:
S. Amor
a
;
b
;
A. Ahaitouf
a
;
Az Ahaitouf
c
;
J.P. Salvestrini
b
;
d
;
jean-paul.salvestrini@univ-lorraine.fr
;
A.
Ougazzaden
d
关键词:
DLTS
;
Carrier traps
;
GaN
;
Schottky diode
刊名:Superlattices and Microstructures
出版年:2017
2.
Improving InGaN heterojunction solar cells efficiency using a semibulk absorber
作者:
M. Arif
a
;
b
;
;
W. Elhuni
c
;
J. Streque
a
;
S. Sundaram
a
;
S. Belahsene
d
;
Y. El Gmili
a
;
M. Jordan
a
;
e
;
X. Li
a
;
e
;
G. Patriarche
d
;
A. Slaoui
f
;
A. Migan
c
;
R. Abderrahim
d
;
Z. Djebbour
c
;
g
;
P.L. Voss
a
;
e
;
J.P. Salvestrini
a
;
b
;
jean-paul.salvestrini@univ-lorraine.fr" class="auth_mail" title="E-mail the corresponding author
;
A.
Ougazzaden
a
;
e
关键词:
InGaN
;
Solar cells
;
Semibulk
刊名:Solar Energy Materials and Solar Cells
出版年:2017
3.
Chemical lift-off and direct wafer bonding of GaN/InGaN P-I-N structures grown on ZnO
作者:
K. Pantzas
a
;
b
;
Konstantinos.pantzas@gatech.edu" class="auth_mail" title="E-mail the corresponding author
;
D.J. Rogers
c
;
P. Bove
c
;
V.E. Sandana
c
;
F.H. Teherani
c
;
Y. El Gmili
d
;
M. Molinari
e
;
G. Patriarche
b
;
L. Largeau
d
;
O. Mauguin
d
;
S. Suresh
d
;
P.L. Voss
a
;
d
;
M. Razeghi
f
;
A.
Ougazzaden
a
;
b
;
Abdallah.
ougazzaden
@ece.gatech.edu" class="auth_mail" title="E-mail the corresponding author
关键词:
A1. Characterization
;
A3. Metalorganic vapor phase epitaxy
;
B1. Nitrides
;
B1. Zinc compounds
;
B3. Solar cells
刊名:Journal of Crystal Growth
出版年:2016
4.
Structural and optical investigations of AlGaN MQWs grown on a relaxed AlGaN buffer on AlN templates for emission at 280 nm
作者:
X. Li
a
;
b
;
G. Le Gac
c
;
S. Bouchoule
d
;
Y. El Gmili
b
;
G. Patriarche
d
;
S. Sundaram
b
;
P. Disseix
c
;
F. Ré
;
veret
c
;
J. Leymarie
c
;
J. Streque
b
;
F. Genty
e
;
J-P. Salvestrini
b
;
f
;
R.D. Dupuis
g
;
X.-H. Li
g
;
P.L. Voss
a
;
b
;
A.
Ougazzaden
a
;
b
;
aougazza@georgiatech-metz.fr" class="auth_mail" title="E-mail the corresponding author
关键词:
A1. Defects
;
A3. Metalorganic vapor phase epitaxy
;
A3. Quantum wells
;
B1. III-nitrides
;
B3. DUV devices
刊名:Journal of Crystal Growth
出版年:2015
5.
Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE
作者:
K. Pantzas
a
;
b
;
konstantinos.pantzas@gatech.edu
;
Y. El Gmili
b
;
J. Dickerson
a
;
b
;
S. Gautier
c
;
b
;
L. Largeau
d
;
O. Mauguin
d
;
G. Patriarche
d
;
S. Suresh
b
;
T. Moudakir
b
;
C. Bishop
a
;
b
;
A. Ahaitouf
b
;
T. Rivera
e
;
C. Tanguy
e
;
1
;
P.L. Voss
a
;
b
;
A.
Ougazzaden
a
;
b
;
abdallah.
ougazzaden
@ece.gatech.edu
关键词:
A3. Metalorganic vapor phase epitaxy
;
B1. Nitrides
;
B2. Semiconducting ternary compounds
;
B3. Solar cells
刊名:Journal of Crystal Growth
出版年:2013
6.
Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer bonding and GaN wafer scale MOVPE growth on ZnO-buffered sapphire
作者:
S. Gautier
a
;
b
;
c
;
simon.gautier@metz.supelec.fr
;
T. Moudakir
c
;
G. Patriarche
d
;
D.J. Rogers
e
;
V.E. Sandana
e
;
F. Hosseini Té
;
herani
e
;
P. Bove
e
;
Y. El Gmili
c
;
K. Pantzas
c
;
h
;
Suresh Sundaram
c
;
D. Troadec
f
;
P.L. Voss
c
;
h
;
M. Razeghi
g
;
A.
Ougazzaden
c
;
h
关键词:
A3. Chemical lift-off
;
A3. Direct wafer bonding
;
A3. MOVPE
;
B1. GaN
刊名:Journal of Crystal Growth
出版年:2013
7.
Suppression of crack generation in AlGaN/GaN distributed Bragg reflectors grown by MOVPE
作者:
T. Moudakir
a
;
tarik.moudakir@georgiatech-metz.fr
;
S. Gautier
a
;
b
;
S. Suresh
a
;
M. Abid
c
;
Y. El Gmili
a
;
G. Patriarche
d
;
K. Pantzas
c
;
D. Troadec
e
;
J. Jacquet
b
;
f
;
F. Genty
b
;
f
;
P. Voss
c
;
A.
Ougazzaden
c
关键词:
A3. Metalorganic vapor phase epitaxy
;
B1. Nitrides
;
B2. Semiconducting gallium compounds
刊名:Journal of Crystal Growth
出版年:2013
8.
Theoretical analysis of the influence of defect parameters on photovoltaic performances of composition graded InGaN solar cells
作者:
V. Gorge
a
;
A. Migan-Dubois
a
;
Z. Djebbour
a
;
b
;
zakaria.djebbour@uvsq.fr
;
K. Pantzas
c
;
d
;
S. Gautier
d
;
e
;
T. Moudakir
d
;
S. Suresh
d
;
A.
Ougazzaden
c
;
d
关键词:
InGaN
;
Solar cell
;
Modeling
;
Defect
;
Graded bandgap
刊名:Materials Science and Engineering: B
出版年:2013
9.
Analytical formulations of image forces on dislocations with surface stress in nanowires and nanorods
作者:
Wei Ye
;
Abdallah
Ougazzaden
;
Mohammed Cherkaoui
关键词:
Dislocation
;
Image force
;
Surface stress
;
Nanowire
;
Nanorod
刊名:International Journal of Solids and Structures
出版年:2013
10.
Nondestructive mapping of chemical composition and structural qualities of group III-nitride nanowires using submicron beam synchrotron-based X-ray diffraction
作者:
P.L. Bonanno
;
S. Gautier
;
Y.El. Gmili
;
T. Moudakir
;
A.A. Sirenko
;
A. Kazimirov
;
Z.-H. Cai
;
J. Martin
;
W.H. Goh
;
A. Martinez
;
A. Ramdane
;
L. Le Gratiet
;
N. Maloufi
;
M.B. Assouar
;
A.
Ougazzaden
关键词:
Nondestructive
;
GaN
;
Synchrotron
;
X-ray diffraction
;
Nano
;
Nanowire
;
RSM
;
MQW
刊名:Thin Solid Films
出版年:2013
1
2
3
4
5
按检索点细分(42)
作者(42)
按出版年细分(42)
2017年(2)
2016年(1)
2015年(1)
2013年(7)
2012年(2)
2011年(3)
2010年(2)
2008年(9)
2006年(2)
2005年(1)
2003年(1)
2000年(3)
2000年及以前(8)
NGLC 2004-2010.National Geological Library of China All Rights Reserved.
Add:29 Xueyuan Rd,Haidian District,Beijing,PRC. Mail Add: 8324 mailbox 100083
For exchange or info please contact us via
email
.