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CNKI学位论文(129)
知网期刊论文(7)
在“
Elsevier电子期刊
”中,
命中:
5
条,耗时:0.0729708 秒
在所有数据库中总计命中:
136
条
1.
Chemical lift-off and
direct
wafer
bonding
of GaN/InGaN P-I-N structures grown on ZnO
作者:
K. Pantzas
a
;
b
;
Konstantinos.pantzas@gatech.edu" class="auth_mail" title="E-mail the corresponding author
;
D.J. Rogers
c
;
P. Bove
c
;
V.E. Sandana
c
;
F.H. Teherani
c
;
Y. El Gmili
d
;
M. Molinari
e
;
G. Patriarche
b
;
L. Largeau
d
;
O. Mauguin
d
;
S. Suresh
d
;
P.L. Voss
a
;
d
;
M. Razeghi
f
;
A. Ougazzaden
a
;
b
;
Abdallah.ougazzaden@ece.gatech.edu" class="auth_mail" title="E-mail the corresponding author
关键词:
A1. Characterization
;
A3
. Metalorganic vapor phase epitaxy
;
B1. Nitrides
;
B1. Zinc compounds
;
B3. Solar cells
刊名:Journal of Crystal Growth
出版年:2016
2.
Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature
direct
wafer
bonding
and GaN
wafer
scale MOVPE growth on ZnO-buffered sapphire
作者:
S. Gautier
a
;
b
;
c
;
simon.gautier@metz.supelec.fr
;
T. Moudakir
c
;
G. Patriarche
d
;
D.J. Rogers
e
;
V.E. Sandana
e
;
F. Hosseini Té
;
herani
e
;
P. Bove
e
;
Y. El Gmili
c
;
K. Pantzas
c
;
h
;
Suresh Sundaram
c
;
D. Troadec
f
;
P.L. Voss
c
;
h
;
M. Razeghi
g
;
A. Ougazzaden
c
;
h
关键词:
A3
. Chemical lift-off
;
A3
.
Direct
wafer
bonding
;
A3
. MOVPE
;
B1. GaN
刊名:Journal of Crystal Growth
出版年:2013
3.
Growth of GaInAs/InP MQW using MOVPE on
direct
ly-bonded InP/Si substrate
作者:
K. Matsumoto
;
T. Makino
;
K. Kimura
;
K. Shimomura
;
shimo@pic.ee.sophia.ac.jp
关键词:
A3
. Metalorganic vapor phase epitaxy
;
A3
. Quantum wells
;
B2. Semiconducting III&ndash
;
V materials
;
B2. Semiconducting indium phosphide
;
B2. Semiconducting silicon
刊名:Journal of Crystal Growth
出版年:2013
4.
Epitaxial growth of quasi-phase matched GaP for nonlinear applications: Systematic process improvements
作者:
V. Tassev
;
M. Snure
;
R. Peterson
;
R. Bedford
;
D. Bliss
;
G. Bryant
;
M. Mann
;
W. Goodhue
;
S. Vangala
;
K. Termkoa
;
A. Lin
;
J.S. Harris
;
M.M. Fejer
;
C. Yapp
;
S. Tetlak
关键词:
A3
. Hydride vapor phase epitaxy
;
B1. Gallium phosphide and gallium arsenide
;
B2. Nonlinear optic materials
刊名:Journal of Crystal Growth
出版年:2012
5.
Gas-source MBE growth of Ga(In)NP/GaP structures and their applications for red light-emitting diodes
作者:
Xin
;
H.P.
;
Welty
;
R.J.
;
Hong
;
Y.G.
;
Tu
;
C.W.
关键词:
81.15.Hi
;
81.05.Zx
;
78.55
;
81.05.Ea
;
A1.High resolution X-ray diffraction
;
A3
.Molecular beam epitaxy
;
B1.Nitrides
;
B2.Semiconducting III&ndash
;
V materials
;
B3.Light emitting diodes
刊名:Journal of Crystal Growth
出版年:2001
1
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