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CNKI学位论文(13)
在“
Elsevier电子期刊
”中,
命中:
8
条,耗时:0.0169932 秒
在所有数据库中总计命中:
13
条
1.
Influence of growth temperature on carrier localization in InGaN/GaN MQWs with strongly redshifted emission band
作者:
J. Mickevičius
;
juras.mickevicius@ff.vu.lt
;
D. Dobrovolskas
;
R. Aleksiejūnas
;
K. Nomeika
;
T. Grinys
;
A. Kadys
;
G. Tamulaitis
关键词:
A1. Carrier localization
;
A3
. MOCVD
;
A3
. Quantum wells
;
A3
.
SPSL
;
B1. Nitrides
刊名:Journal of Crystal Growth
出版年:2017
2.
Growth and characterization of Mg-doped AlGaN–AlN short-period superlattices for deep-UV optoelectronic devices
作者:
A.A. Allerman
;
M.H. Crawford
;
M.A. Miller
;
S.R. Lee
关键词:
A3
. Metalorganic chemical vapor deposition
;
A3
. Superlattices
;
B1. Nitrides
;
B2. Semiconducting aluminum compounds
;
B2. AlGaN
刊名:Journal of Crystal Growth
出版年:2010
3.
MBE growth of mid-IR diode lasers based on InAs/GaSb/InSb short-period superlattice active zones
作者:
A. Gassenq
;
L. Cerutti
;
A.N. Baranov
;
E. Tournié
关键词:
A3
. Molecular beam epitaxy
;
A3
. Superlattices
;
B1. Antimonides
;
B2. Semiconductor III–
;
V materials
;
B3. Laser diodes
刊名:Journal of Crystal Growth
出版年:2009
4.
MBE growth of ultra-low disorder 2DEG with mobility exceeding 35×10
6
cm
2
/V s
作者:
V. Umansky
;
M. Heiblum
;
Y. Levinson
;
J. Smet
;
J. Nü
;
bler
;
M. Dolev
关键词:
A1. Low-dimensional structures
;
A3
. Molecular beam epitaxy
;
B2. Semiconducting gallium arsenide
刊名:Journal of Crystal Growth
出版年:2009
5.
(InP)
5
/(Ga
0.47
In
0.53
As)
4
short-period superlattices waveguides for InAs quantum wires lasers
作者:
F. Suá
;
rez
;
D. Fuster
;
L. Gonzá
;
lez
;
Y. Gonzá
;
lez
;
J.M. Garcí
;
a
;
M.L. Dotor
关键词:
A1. Low-dimensional structures
;
A1. Nanostructures
;
A3
. Molecular beam epitaxy
;
A3
. Superlattices
;
B2. Semiconducting III–
;
V materials
;
B3. Laser diodes
刊名:Journal of Crystal Growth
出版年:2007
6.
De La Rue scoops UK ePassport contract
刊名:Card Technology Today
出版年:2009
7.
De La Rue scoops UK ePassport contract
刊名:Biometric Technology Today
出版年:2009
8.
Lateral composition modulation in strain compensated (GaInP)
m
(GaInAs)
m
short-period superlattices grown on (0 0 1) InP by atomic layer molecular beam epitaxy
作者:
Golmayo
;
D.
;
Dotor
;
M.L.
;
Quintana
;
C.
关键词:
A3
. Atomic layer epitaxy
;
A3
. Superlattices
;
B2. Semiconducting III&ndash
;
V materials
刊名:Journal of Crystal Growth
出版年:2003
1
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