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内部出版物
在“
Elsevier电子期刊
”中,
命中:
60
条,耗时:0.0269871 秒
1.
Characteristics and electrical properties of reactively sputtered
AlInGaN
films from three different Al
0.05
In
x
Ga
0.95−x
N targets with x=0.075, 0.15, and 0.25
作者:
Kaifan Lin
;
Dong-Hau Kuo
;
dhkuo@mail.ntust.edu.tw" class="auth_mail" title="E-mail the corresponding author
关键词:
AlInGaN
;
Thin film
;
Sputtering
;
Electrical property
;
High turn-on voltage
刊名:Materials Science in Semiconductor Processing
出版年:2017
2.
Room temperature hydrogen gas sensing characteristics of porous quaternary
AlInGaN
film prepared via UV-assisted photo-electrochemical etching
作者:
Hock Jin Quah
a
;
Naser Mahmoud Ahmed
b
;
Norzaini Zainal
a
;
Fong Kwong Yam
b
;
Zainuriah Hassan
a
;
zai@usm.my" class="auth_mail" title="E-mail the corresponding author
;
Way Foong Lim
a
;
wayfoong317@yahoo.com.sg" class="auth_mail" title="E-mail the corresponding author
;
way_foong@usm.my" class="auth_mail" title="E-mail the corresponding author
关键词:
Porous
AlInGaN
;
Semiconductors
;
Sensors
;
Ultraviolet-assisted photo-electrochemical etching
;
Hydrogen
刊名:Superlattices and Microstructures
出版年:2016
3.
Effects of growth temperature on characteristics of Mg-delta-doped p-
AlInGaN
epi-layers
作者:
Zili Wu
a
;
Xiong Zhang
a
;
xzhang62@aliyun.com" class="auth_mail" title="E-mail the corresponding author
;
Tianhui Liang
a
;
Zhe Chuan Feng
b
;
Yiping Cui
a
关键词:
MOCVD
;
p-
AlInGaN
;
Mg-delta-doping
;
Mg-H complex
;
Hole concentration
刊名:Superlattices and Microstructures
出版年:2016
4.
Homogeneity and composition of
AlInGaN
: A multiprobe nanostructure study
作者:
Florian F. Krause
a
;
f.krause@ifp.uni-bremen.de" class="auth_mail" title="E-mail the corresponding author
;
Jan-Philipp Ahl
b
;
Darius Tytko
c
;
Pyuck-Pa Choi
c
;
Ricardo Egoavil
d
;
Marco Schowalter
a
;
Thorsten Mehrtens
a
;
Knut Mü
;
ller-Caspary
a
;
Johan Verbeeck
d
;
Dierk Raabe
c
;
Joachim Hertkorn
b
;
Karl Engl
b
;
Andreas Rosenauer
a
关键词:
HAADF STEM
;
AlInGaN
;
Homogeneity
;
InAlGaN
;
EDX
;
APT
;
AlGaInN
刊名:Ultramicroscopy
出版年:2015
5.
Droop-multimode trade-off in GaN-InGaN LEDs: Effect of polarization-matched
AlInGaN
blocking layers
作者:
Vikas Pendem
a
;
b
;
vikas6@outlook.com" class="auth_mail" title="E-mail the corresponding author
;
Sonachand Adhikari
a
;
b
;
Manish Mathew
a
;
Sumitra Singh
a
;
b
;
Suchandan Pal
a
;
b
关键词:
Droop cut-off condition (DCC)
;
Efficiency droop
;
Internal quantum efficiency (IQE)
;
Light-emitting diode (LED)
;
Multimode cut-off condition (MCC)
;
Polarization-matched
AlInGaN
刊名:Superlattices and Microstructures
出版年:2015
6.
High-efficiency of
AlInGaN
/Al(In)GaN-delta AlGaN quantum wells for deep-ultraviolet emission
作者:
Hosni Saidi
a
;
hosni.saidi@yahoo.fr" class="auth_mail" title="E-mail the corresponding author
;
Said Ridene
a
;
b
关键词:
Large optical gain
;
Al(In)GaN-delta AlGaN quantum wells laser active regions
;
Deep-ultraviolet emission
刊名:Superlattices and Microstructures
出版年:2016
7.
Structural and optical investigation of porous quaternary Al
0.10
In
0.10
Ga
0.80
N films produced via ultraviolet-assisted photo-electrochemical etching in acidic solutions
作者:
Hock Jin Quah
a
;
b
;
Way Foong Lim
a
;
b
;
way_foong@usm.my" class="auth_mail" title="E-mail the corresponding author
;
wayfoong317@yahoo.com.sg" class="auth_mail" title="E-mail the corresponding author
;
Zainuriah Hassan
a
;
b
;
zai@usm.my" class="auth_mail" title="E-mail the corresponding author
;
Fong Kwong Yam
a
;
Norzaini Zainal
a
关键词:
Photo-electrochemical
;
Porous
;
AlInGaN
;
Mechanism
;
Strain analysis
;
Photoluminescence
刊名:Journal of Alloys and Compounds
出版年:2016
8.
Structural and optical properties of Si-doped Al
0.08
In
0.08
Ga
0.84
N thin films grown on different substrates for optoelectronic devices
作者:
Alaa Jabbar Ghazai
a
;
b
;
alaaphys74@gmail.com" class="auth_mail" title="E-mail the corresponding author
;
Haslan Abu Hassan
b
;
Zanuri Bint Hassan
b
关键词:
AlInGaN
quaternary
;
XRD
;
PL
;
Strain
;
Si-doped
刊名:Superlattices and Microstructures
出版年:2016
9.
Influence of TMIn flow rate on structural and optical quality of
AlInGaN
/GaN epilayers grown by MOCVD
作者:
R. Loganathan
logu73511@gmail.com" class="auth_mail" title="E-mail the corresponding author
;
K. Prabakaran
;
S. Pradeep
;
S. Surender
;
Shubra Singh
;
K. Baskar
;
drbaskar2009@gmail.com" class="auth_mail" title="E-mail the corresponding author
关键词:
Nitride materials
;
Optical materials
;
Vapor deposition
;
AFM
;
Luminescence
刊名:Journal of Alloys and Compounds
出版年:2016
10.
Effect of different EBL structures on deep violet InGaN laser diodes performance
作者:
Gh. Alahyarizadeh
a
;
g_alahyarizadeh@yahoo.com" class="auth_mail" title="E-mail the corresponding author
;
M. Amirhoseiny
a
;
b
;
Z. Hassan
c
关键词:
InGaN DQW laser diode
;
Quantum well
;
Electron blocking layer
;
Quaternary
;
Numerical simulation
刊名:Optics & Laser Technology
出版年:2016
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