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CNKI学位论文(7)
在“
Elsevier电子期刊
”中,
命中:
19
条,耗时:0.0249902 秒
在所有数据库中总计命中:
7
条
1.
Structural and optical properties of Al
x
Ga
1−x
N (0.33 ≤ x ≤ 0.79) layers on high-temperature AlN interlayer grown by metal organic chemical vapor deposition
作者:
Qingjun Xu
a
;
b
;
Bin Liu
a
;
bliu@nju.edu.cn
;
Shiying Zhang
a
;
b
;
Tao Tao
a
;
Jiangping Dai
a
;
Guotang He
a
;
Zili Xie
a
;
Xiangqian Xiu
a
;
Dunjun Chen
a
;
Peng Chen
a
;
Ping Han
a
;
Rong Zhang
a
;
rzhang@nju.edu.cn
关键词:
AlxGa1
&
minus
;
xN
;
High Al content
;
High-temperature AlN interlayer
;
MOCVD
刊名:Superlattices and Microstructures
出版年:2017
2.
Acoustic phonon modes in asymmetric Al
x
Ga
1−
x
N/GaN/Al
y
Ga
1−
y
N quantum wells
作者:
Y.H. Zan
;
S.L. Ban
;
slban@imu.edu.cn
;
Y.J. Chai
;
Y. Qu
关键词:
Acoustic phonon
;
Asymmetric quantum well
;
AlxGa1
&
minus
;
xN/GaN/Al1&
minus
;
yGayN
刊名:Superlattices and Microstructures
出版年:2017
3.
The effects of a geometrical size, external electric fields and impurity on the optical gain of a quantum dot laser with a semi-parabolic spherical well potential
作者:
Erfan Owji
a
;
erfanowji@gmail.com
;
Alireza Keshavarz
b
;
keshavarz@sutech.ac.ir
;
Hosein Mokhtari
a
;
phmh.mokhtari@yazd.ac.ir
关键词:
Geometrical size
;
Hydrostatic pressure
;
Impurity
;
Optical gain
;
Quantum dot laser
刊名:Physica B: Condensed Matter
出版年:2017
4.
Effect of epitaxial layer thickness on the electrical properties of Ti/n-AlGaAs grown by MBE
作者:
N.A. Al-Ahmadi
;
nalahmadi@kau.edu.sa
;
H.A. Al-Jawhari
关键词:
Schottky barrier height
;
Si
;
AlxGa1
&
minus
;
xAs
;
Epitaxial layer thickness
刊名:Results in Physics
出版年:2016
5.
Electron transport in Al
x
Ga
1−
x
As δ-MIGFETs: Conductivity enhancement induced by magnetic field effects
作者:
O. Oubram
a
;
I. Rodrí
;
guez-Vargas
b
;
c
;
isaac@fisica.uaz.edu.mx
;
L.M. Gaggero-Sager
d
;
L. Cisneros-Villalobos
a
;
A. Bassam
e
;
J.G. Velá
;
squez-Aguilar
a
;
M. Limó
;
n-Mendoza
a
关键词:
Electron transport
;
Mobility
;
Conductivity
;
AlxGa1
&
minus
;
xAs
;
δ-MIGFET
刊名:Superlattices and Microstructures
出版年:2016
6.
Epitaxial alloys of Al
x
Ga
1−
x
As:Mg with different types of conductivity
作者:
P.V. Seredin
a
;
paul@phys.vsu.ru" class="auth_mail" title="E-mail the corresponding author
;
A.S. Lenshin
a
;
I.N. Arsentyev
b
;
arsentyev@mail.ioffe.ru" class="auth_mail" title="E-mail the corresponding author
;
I.S. Tarasov
b
;
Тatiana Prutskij
c
;
prutskij@yahoo.com" class="auth_mail" title="E-mail the corresponding author
;
Harald Leiste
d
;
Monika Rinke
d
关键词:
MOCVD heterostructures
;
AlxGa1
&
minus
;
xAs
;
Mg
;
Structural and optical properties
刊名:Physica B: Physics of Condensed Matter
出版年:2016
7.
Comments on a peak of Al
x
Ga
1
−
x
N observed by infrared reflectance
作者:
G. Marx
a
;
J.A.A. Engelbrecht
a
;
Japie.Engelbrecht@nmmu.ac.za" class="auth_mail" title="E-mail the corresponding author
;
M.E. Lee
a
;
M.C. Wagener
b
;
A. Henry
c
关键词:
AlxGa1
&
minus
;
xN
;
Infrared reflectance
;
Unassigned peak origin
刊名:Infrared Physics & Technology
出版年:2016
8.
Quantum efficiency of transmission-mode Al
x
Ga
1∿span style='font-style: italic'>x
As/GaAs photocathodes with graded-composition and exponential-doping structure
作者:
Cheng Feng
a
;
Yijun Zhang
a
;
zhangyijun423@126.com" class="auth_mail" title="E-mail the corresponding author
;
Yunsheng Qian
a
;
Yuan Xu
a
;
Xinxin Liu
a
;
Gangcheng Jiao
b
关键词:
AlxGa1
&
minus
;
xAs/GaAs photocathodes
;
Quantum efficiency
;
Graded-composition
;
Exponential-doping
刊名:Optics Communications
出版年:2016
9.
Analysis of the Tb
3+
recombination in ion implanted Al
x
Ga
1−
x
N (0≤
x≤1) layers
作者:
J. Rodrigues
a
;
joana.catarina@ua.pt" class="auth_mail" title="E-mail the corresponding author
;
M. Fialho
b
;
S. Magalhã
;
es
b
;
M.R. Correia
a
;
L. Rino
a
;
E. Alves
b
;
A.J. Neves
a
;
K. Lorenz
b
;
T. Monteiro
a
关键词:
AlxGa1
&
minus
;
xN
;
Tb3+
;
RBS
;
PL
;
PLE
;
TRPL
刊名:Journal of Luminescence
出版年:2016
10.
Growth Al
x
Ga
1−x
N films on Si substrates by magnetron sputtering and high ammoniated two-step method
作者:
Xuewen Wang
a
;
wangxuew@nwu.edu.cn" class="auth_mail" title="E-mail the corresponding author
;
Xingxing Su
a
;
Feng Hu
a
;
Lin He
a
;
Lewan He
a
;
Zhiyong Zhang
a
;
Wu Zhao
a
;
Kai-Ge Wang
b
;
Shuang Wang
b
关键词:
Magnetron sputtering
;
AlxGa1
&
minus
;
xN
;
Thin film
;
Optical properties
;
Crystal growth
;
X-ray diffraction
刊名:Journal of Alloys and Compounds
出版年:2016
1
2
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