设为首页
收藏本站
网站地图
|
English
|
公务邮箱
About the library
Background
History
Leadership
Organization
Readers' Guide
Opening Hours
Collections
Help Via Email
Publications
Electronic Information Resources
常用资源
电子图书
期刊论文
学位会议
外文资源
特色专题
内部出版物
CNKI学位论文(4)
知网期刊论文(1)
在“
Elsevier电子期刊
”中,
命中:
7
条,耗时:小于0.01 秒
在所有数据库中总计命中:
5
条
1.
Nitrogen-induced localized level observed by photoreflectance in GaAsN thin films grown by chemical beam epitaxy
作者:
Hidetoshi Suzuki
;
Akio Suzuki
;
Atsuhiko
Fukuyama
;
Tetsuo Ikari
关键词:
A1. Photoreflectance
;
A3. Chemical beam epitaxy
;
B1. Dilute nitride
刊名:Journal of Crystal Growth
出版年:1 December, 2013
2.
Reduction of rotational twin formation by indium pre-evaporation in epitaxially grown GaAs films on Si (111) substrate
作者:
Hidetoshi Suzuki
;
Daiki Ito
;
Atsuhiko
Fukuyama
;
Tetsuo Ikari
关键词:
A1. Rotational twin
;
A3. Molecular beam epitaxy
;
B1. GaAs
;
B2. III&ndash
;
V on Si
刊名:Journal of Crystal Growth
出版年:2013
3.
Investigation of the photovoltaic performance of the polycrystalline silicon p-n junction by a photothermal measurement
作者:
Atsuhiko
Fukuyama
;
Daisuke Ishibashi
;
Yohei Sato
;
Kentaro Sakai
;
Hidetoshi Suzuki
;
Kensuke Nishioka
;
Tetsuo Ikari
关键词:
Polycrystalline silicon
;
Solar cells
;
Photothermal measurements
;
Non-radiative recombination
刊名:Journal of Non-Crystalline Solids
出版年:2012
4.
Surface states and band-to-band non-radiative transitions in silicon single crystal investigated by piezoelectric photothermal spectroscopy
作者:
Memon
;
Aftab A.
;
Fukuyama
;
Atsuhiko
;
Sato
;
Syoichiro
;
Ikari
;
Tetsuo
关键词:
PPTS
;
Non-radiative
;
Silicon
;
Surface states
;
Band-to-band
;
78.20.Nv
;
81.05.Cy
;
71.55.Cn
刊名:Materials Science and Engineering: B
出版年:2003
5.
Photoacoustic spectra of zincselenide thin films grown by molecular beam epitaxy
作者:
Yoshino
;
Kenji
;
Nakagawa
;
Yasuhiro
;
Fukuyama
;
Atsuhiko
;
Maeda
;
Kouji
;
Yoneta
;
Minoru
;
Ohishi
;
Masakazu
;
et. al.
关键词:
Zincselenide (ZnSe)
;
Molecular beam epitaxy (MBE)
;
Piezoelectric&ndash
;
photoacoustic (PPA)
;
Intrinsic defects
;
Material
刊名:Microelectronic Engineering
出版年:1998
6.
Shallow donor levels of Li-doped ZnSe single crystals
作者:
Ikari
;
Tetsuo
;
Maeda
;
Kouji
;
Yokoyama
;
Hirosumi
;
Fukuyama
;
Atsuhiko
;
Yoshino
;
Kenji
关键词:
ZnSe
;
Photoluminescence (PL)
;
Activation energy
;
Donor&ndash
;
acceptor pair (DAP)
;
Free-to-acceptor (FA)
;
Material
刊名:Microelectronic Engineering
出版年:1998
7.
Deep levels in ZnSe epitaxial layers examined by piezoelectric photoacoustic spectroscopy
作者:
Yoshino
;
Kenji
;
Nakagawa
;
Yasuhiro
;
Fukuyama
;
Atsuhiko
;
Maeda
;
Kouji
;
Yoneta
;
Minoru
;
Saito
;
Hiroshi
;
et. al.
关键词:
Zinc selenide (ZnSe)
;
Molecular beam epitaxy (MBE)
;
Piezoelectric photoacoustic (PPA)
;
Photoluminescence (PL)
;
Nonradiative recombination
刊名:Journal of Crystal Growth
出版年:1998
1
按检索点细分(7)
作者(7)
按出版年细分(7)
2013年(1)
2012年(1)
2003年(1)
2000年及以前(4)
NGLC 2004-2010.National Geological Library of China All Rights Reserved.
Add:29 Xueyuan Rd,Haidian District,Beijing,PRC. Mail Add: 8324 mailbox 100083
For exchange or info please contact us via
email
.