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在“Elsevier电子期刊”中，命中：92条，耗时：0.0169922 秒

在所有数据库中总计命中：166条

1.Improvement of radiation stability of semi-insulating gallium arsenide crystals by deposition of diamond-like carbon films

作者：N.I. Klyui^a ; ^b ; V.B. Lozinskii^a ; ^b ; ^{lvb60@ukr.net} ; A.I. Liptuga^b ; V.Yu. Izotov^a ; ^b ; Wei Han^a ; Bingbing Liu^a ; ^{liubb@jlu.edu.cn}

关键词：Semi-insulating GaAs ; γ-irradiation ; Degradation stability ; IR transmittance

刊名：Optical Materials

出版年：2016

2.Chemical composition of native oxides on noble gases implanted GaAs

作者：M. Kulik^a ; ^b ; ^{mkulik@hektor.umcs.lublin.pl" class="auth_mail" title="E-mail the corresponding author} ; D. Kołodyńska^c ; A.P. Kobzev^b ; F.F. Komarov^d ; Z. Hubicki^c ; K. Pyszniak^a

关键词：Native oxides ; Ion implantation ; Gallium arsenide ; X-ray photoelectron spectroscopy ; Rutherford back-scattering spectroscopy ; Nuclear reaction

刊名：Thin Solid Films

出版年：2016

3.Chromium compensated gallium arsenide detectors for X-ray and 纬-ray spectroscopic imaging

作者：M.C. Veale^a ; ^{matthew.veale@stfc.ac.uk" class="auth_mail} ; S.J. Bell^a ; ^b ; D.D. Duarte^a ; ^b ; M.J. French^a ; A. Schneider^a ; P. Seller^a ; M.D. Wilson^a ; A.D. Lozinskaya^c ; V.A. Novikov^c ; O.P. Tolbanov^c ; A. Tyazhev^c ; A.N. Zarubin^c

关键词：Gallium arsenide ; Radiation ; X-ray detector ; Imaging ; Pixel detector ; Compensation

刊名：Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

出版年：11 July 2014

4.Numerical simulation of the response of substrate traps to a voltage applied to the gate of a gallium arsenide field effect transistor

作者：N. Sengouga^a ; ^{n.sengouga@univ-biskra.dz" class="auth_mail} ; ^{nouredine_sengouga@yahoo.co.uk" class="auth_mail} ; Af. Meftah^a ; Am. Meftah^a ; M. Henini^b

关键词：Substrate traps ; Gate voltage ; GaAs MESFET ; SILVACO simulation

刊名：Materials Science in Semiconductor Processing

出版年：August 2014

5.THz wave emission of GaAs induced by He⁺ ion implantation

作者：Kang Yang^a ; ^b ; Jianqing Cao^a ; Can Huang^a ; ^b ; Te Ji^a ; Zengyan Zhang^a ; Qi Liu^a ; Shengwei Wu^a ; Jun Lin^a ; Hongwei Zhao^a ; Zhiyong Zhu^a ; ^{zhuzhiyong@sinap.ac.cn}

关键词：Ion implantation ; THz spectroscopy ; Photoconductive antenna

刊名：Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

出版年：2013

6.Near band-edge luminescence of semi-insulating undoped gallium arsenide at high levels of excitation

作者：V.F. Kovalenko ; S.V. Shutov ; Ye.A. Baganov ; M.M. Smyikalo

关键词：Semi-insulating undoped GaAs ; Near band-edge luminescence ; High level of excitation ; Electron– ; hole plasma

刊名：Journal of Luminescence

出版年：2009

7.Effects of thermal annealing on the electrical properties of large diameter semi-insulating gallium arsenide

作者：Hongyan Liu ; Weizhong Sun ; Qiuyan Hao ; Haiyun Wang ; Caichi Liu

关键词：SI-GaAs ; Thermal annealing ; Electrical properties ; As interstitial atoms

刊名：Journal of Alloys and Compounds

出版年：2009

8.Stable p-type ZnO films grown by atomic layer deposition on GaAs substrates and treated by post-deposition rapid thermal annealing

作者：Yung-Chen Cheng^a ; Ying-Shen Kuo^b ; Yun-Hsiu Li^b ; Jing-Jong Shyue^b ; ^c ; Miin-Jang Chen^b ; ^{mjchen@ntu.edu.tw"" rel=""nofollow}

关键词：Atomic layer deposition ; Rapid thermal annealing ; p-type Zinc oxide ; Thin films ; Gallium arsenide substrates ; Photoluminescence ; X-ray photoelectron spectroscopy

刊名：Thin Solid Films

出版年：2011

9.RBS-C and ellipsometric investigations of radiation damage in hot-implanted GaAs layers

作者：M. Kulik^a ; ^{mkulik@hektor.umcs.lublin.pl} ; J. Ż ; uk^a ; ¹ ; A. Droź ; dziel^a ; ¹ ; K. Pyszniak^a ; ¹ ; F.F. Komarov^b ; W. Rzodkiewicz^c

关键词：Gallium arsenide ; Ion implantation ; Variable Angle Spectroscopic Ellipsometry ; RBS/C

刊名：Materials Science and Engineering: B

出版年：2011

10.The influence of the scatter of heat flux at the m/c interface on the frequency of appearance of poly body and twin defects during 6″ semi-insulating GaAs crystal growth by the VGF method

作者：Marina P. Marchenko ; Weiguo Liu ; M. Hani Badawi ; Phil Yin

关键词：A1. Computer simulation ; A1. Defects ; A2. Gradient freeze technique ; A2. Single-crystal growth ; B2. Semiconducting gallium arsenide

刊名：Journal of Crystal Growth

出版年：2008

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