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在“Elsevier电子期刊”中，命中：360条，耗时：0.126938 秒

在所有数据库中总计命中：212条

1.Growth and characterization of β-Ga₂O₃ crystals

作者：V.I. Nikolaev^a ; ^b ; ^c ; V. Maslov^c ; S.I. Stepanov^b ; ^d ; ^{s.i.stepanov@googlemail.com} ; A.I. Pechnikov^a ; ^b ; V. Krymov^b ; ^c ; I.P. Nikitina^c ; L.I. Guzilova^b ; ^c ; V.E. Bougrov^b ; A.E. Romanov^b ; ^c

关键词：A2. Growth from vapour ; A3. Physical vapour deposition processes ; B1. Gallium compounds ; B1. Oxides ; B2. Semiconducting gallium compounds ; B2. Wide bandgap semiconductors

刊名：Journal of Crystal Growth

出版年：2017

2.Growth and characterization of β-Ga₂O₃ nanowires obtained on not-catalyzed and Au/Pt catalyzed substrates

作者：Davide Calestani^a ; ^{calle@imem.cnr.it} ; Aderemi Babatunde Alabi^b ; Nicola Coppedè ; ^a ; Marco Villani^a ; Laura Lazzarini^a ; Filippo Fabbri^a ; ^c ; Giancarlo Salviati^a ; Andrea Zappettini^a

关键词：A1. Nanostructures ; A3. Chemical vapor deposition processes ; B1. Oxides ; B1. Nanomaterials ; B2. Semiconducting gallium compounds

刊名：Journal of Crystal Growth

出版年：2017

3.Transition metal doping of GaSe implemented with low temperature liquid phase growth

作者：Nuo Lei^a ; Youhei Sato^a ; Tadao Tanabe^a ; ^{tadao.tanabe.b1@tohoku.ac.jp} ; Kensaku Maeda^b ; Yutaka Oyama^a

关键词：A1. Point defects ; A2. Growth from melt ; A3. Liquid phase epitaxy ; B1. Gallium compounds ; B2. Semiconducting gallium compounds ; B3. Nonlinear optical

刊名：Journal of Crystal Growth

出版年：2017

4.Ammonothermal synthesis of GaN using Ba(NH₂)₂ as mineralizer

作者：J. Hertrampf^a ; N.S.A. Alt^b ; E. Schlü ; cker^b ; M. Knetzger^c ; E. Meissner^c ; R. Niewa^a ; ^{niewa@iac.uni-stuttgart.de}

关键词：A1. Solubility ; A2. Growth from solution ; B1. Nitrides ; B2. Semiconducting III-V materials ; B2. Semiconducting gallium compounds

刊名：Journal of Crystal Growth

出版年：2016

5.The orientational relationship between monoclinic β-Ga₂O₃ and cubic NiO

作者：Shinji Nakagomi ; ^{nakagomi@isenshu-u.ac.jp" class="auth_mail" title="E-mail the corresponding author} ; Shohei Kubo ; Yoshihiro Kokubun

关键词：A1. Crystal structure ; A1. X-ray diffraction ; B1. Gallium compounds ; B1. Oxides ; B2. Semiconducting gallium compounds

刊名：Journal of Crystal Growth

出版年：2016

6.Growth of β-Ga₂O₃ single crystals using vertical Bridgman method in ambient air

作者：K. Hoshikawa^a ; ^{khoshi1@shinshu-u.ac.jp" class="auth_mail" title="E-mail the corresponding author} ; E. Ohba^b ; T. Kobayashi^b ; J. Yanagisawa^b ; C. Miyagawa^b ; Y. Nakamura^b

关键词：A2. Bridgman technique ; A2. Growth from melt ; A2. Single crystal growth ; B1. Oxides ; B2. Semiconducting gallium compounds

刊名：Journal of Crystal Growth

出版年：2016

7.Lateral GaN nanowire prepared by using two-step TMAH wet etching and HfO₂ sidewall spacer

作者：Ki-Sik Im^a ; ^b ; Chul-Ho Won^a ; Sindhuri Vodapally^a ; Dong-Hyeok Son^a ; Young-Woo Jo^a ; YoHan Park^a ; Jae-Hoon Lee^c ; Jung-Hee Lee^a ; ^{jlee@ee.knu.ac.kr" class="auth_mail" title="E-mail the corresponding author}

关键词：A1. Nanostructures ; A1. Etching ; A1. Crystal structure ; A3. Metalorganic chemical vapor deposition ; B1. Nitride ; B2. Semiconducting gallium compounds

刊名：Journal of Crystal Growth

出版年：2016

8.Anomalous elongation of c-axis of GaN on Al₂O₃ grown by MBE using NH₃-cluster ions

作者：Yoshihiro Ichinohe^a ; ; Kazuaki Imai^a ; Kazuhiko Suzuki^a ; Hiroshi Saito^b

关键词：A1. X-ray diffraction ; A3. Molecular beam epitaxy ; B1. Nitrides ; B1. GaN ; B2. Semiconducting gallium compounds

刊名：Journal of Crystal Growth

出版年：2016

9.Fe-doping in hydride vapor-phase epitaxy for semi-insulating gallium nitride

作者：E. Richter ; ^{eberhard.richter@fbh-berlin.de} ; E. Gridneva ; M. Weyers ; G. Trä ; nkle

关键词：A1. Doping ; A2. Growth from vapor ; A3. Hydride vapor phase epitaxy ; B2. Semiconducting gallium compounds ; B2. Semiconducting III&ndash ; V materials

刊名：Journal of Crystal Growth

出版年：2016

10.Direct MOCVD epitaxy of GaAsP on SiGe virtual substrate without growth of SiGe

作者：Bing Wang^a ; ^{wangbing@smart.mit.edu" class="auth_mail" title="E-mail the corresponding author} ; Cong Wang^a ; ^b ; David A. Kohen^a ; Riko I. Made^a ; Kenneth Eng Kian Lee^a ; Taewan Kim^d ; Tim Milakovich^c ; Eugene A. Fitzgerald^a ; ^c ; Soon Fatt Yoon^a ; ^b ; Jurgen Michel^a ; ^d

关键词：A3. Metalorganic vapor phase epitaxy ; B2. Semiconducting III&ndash ; V materials ; B2. Semiconducting gallium compounds ; B2. Semiconducting silicon compounds ; B3. Light emitting diodes

刊名：Journal of Crystal Growth

出版年：2016

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