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在“Elsevier电子期刊”中，命中：29条，耗时：0.01999 秒

在所有数据库中总计命中：14条

1.Gate Drain Underlapped-PNIN-GAA-TFET for Comprehensively Upgraded Analog/RF Performance

作者：Jaya Madan ^{jayamadan.2012@gmail.com} ; Rishu Chaujar ; ^{rishu.phy@dce.edu}

关键词：Band to band tunneling (BTBT) ; Source pocket ; Gate-drain underlapping (GDU) ; Parasitic capacitance ; Tunneling FET (TFET)

刊名：Superlattices and Microstructures

出版年：2017

2.Influence of Germanium source on dopingless tunnel-FET for improved analog/RF performance

作者：Kanchan Cecil ; ^{c.kanchan@iiitdmj.ac.in} ; Jawar Singh ^{jawar@iiitdmj.ac.in}

关键词：Tunnel field effect transistor (TFETs) ; Band-to-band tunneling (BTBT) ; Charge plasma ; Band gap engineering ; Germanium (Ge) ; Analog FOMs ; RF FOMs ; TCAD

刊名：Superlattices and Microstructures

出版年：2017

3.Performance comparison of single and dual metal dielectrically modulated TFETs for the application of label free biosensor

作者：Madhulika Verma ^{madhulikaverma@iiitdmj.ac.in} ; Dheeraj Sharma ^{dheeraj@iiitdmj.ac.in} ; Sunil Pandey ; ^{sunilpandey@iiitdmj.ac.in} ; Kaushal Nigam ^{kaushal.nigam@iiitdmj.ac.in} ; P.N. Kondekar ^{pnkondekar@iiitdmj.ac.in}

关键词：Band to band tunneling (BTBT) ; Dielectrically modulated TFETs ; Biosensors ; Technology computer aided design (TCAD) ; Sensitivity

刊名：Superlattices and Microstructures

出版年：2017

4.Double gate impact ionization MOS transistor: Proposal and investigation

作者：Zhaonian Yang ; ^{yzn@xaut.edu.cn} ; Yue Zhang ; Yuan Yang ; Ningmei Yu

关键词：Band-to-band tunneling (BTBT) ; Double gate ; Impact ionization ; IMOS ; Leakage current

刊名：Superlattices and Microstructures

出版年：2017

5.Performance investigation of bandgap, gate material work function and gate dielectric engineered TFET with device reliability improvement

作者：Bhagwan Ram Raad ; ^{bhagwanramraad@gmail.com" class="auth_mail" title="E-mail the corresponding author} ; Kaushal Nigam ^{kaushalnigam3@gmail.com" class="auth_mail" title="E-mail the corresponding author} ; Dheeraj Sharma ^{dheeraj24482@gmail.com" class="auth_mail" title="E-mail the corresponding author} ; P.N. Kondekar ^{pnkondekar@iiitdmj.ac.in" class="auth_mail" title="E-mail the corresponding author}

关键词：Band to band tunneling (BTBT) ; Bandgap engineering ; Gate material work function engineering ; Gate dielectric engineering

刊名：Superlattices and Microstructures

出版年：2016

6.InN/InGaN complementary heterojunction-enhanced tunneling field-effect transistor with enhanced subthreshold swing and tunneling current

作者：Yue Peng^a ; Genquan Han^a ; ^{hangenquan@ieee.org" class="auth_mail" title="E-mail the corresponding author} ; ^{gqhan@xidian.edu.cn" class="auth_mail" title="E-mail the corresponding author} ; Hongjuan Wang^a ; Chunfu Zhang^a ; Yan Liu^a ; Yibo Wang^a ; Shenglei Zhao^b ; Jincheng Zhang^a ; Yue Hao^a

关键词：TFET ; Band to band tunneling (BTBT) ; Heterojunction ; InN/In0.75Ga0.25N

刊名：Superlattices and Microstructures

出版年：2016

7.Negative differential resistance in BN co-doped coaxial carbon nanotube field effect transistor

作者：Khurshed A. Shah ; ^{drkhursheda@gmail.com} ; M. Shunaid Parvaiz

关键词：Coaxial CNTFET ; Negative differential resistance ; Non-equilibrium Green's function ; BN co-doping ; Band to band tunneling

刊名：Superlattices and Microstructures

出版年：2016

8.Performance investigation of InAs based dual electrode tunnel FET on the analog/RF platform

作者：Sunny Anand ; ^{sunnyanand.ec.13@nitj.ac.in" class="auth_mail" title="E-mail the corresponding author} ; R.K. Sarin

关键词：Dual electrode doping-less TFET (DEDLTFET) ; Low bandgap material ; Analog performance ; Charge plasma ; Band to band tunneling (BTBT)

刊名：Superlattices and Microstructures

出版年：2016

9.Spacer engineered Trigate SOI TFET: An investigation towards harsh temperature environment applications

作者：Mallikarjunarao^a ; ^{mallikarjunarao524@gmail.com" class="auth_mail" title="E-mail the corresponding author} ; Rajeev Ranjan^a ; ^{rajeevranjan212@gmail.com" class="auth_mail" title="E-mail the corresponding author} ; K.P. Pradhan^a ; ^{kp2.etc@gmail.com" class="auth_mail" title="E-mail the corresponding author} ; L. Artola^b ; ^{laurent.artola@onera.fr" class="auth_mail" title="E-mail the corresponding author} ; P.K. Sahu^a ; ^{pksahu@nitrkl.ac.in" class="auth_mail" title="E-mail the corresponding author}

关键词：Trigate TFET ; Band-to-band tunneling (BTBT) ; Subthreshold swing (SS) ; High-k spacer ; Ambipolar conduction ; Reliability

刊名：Superlattices and Microstructures

出版年：2016

10.Design of Si_0.5Ge_0.5 based tunnel field effect transistor and its performance evaluation

作者：Gurmeet Singh ; S. Intekhab Amin ; ^{intekhabamin@gmail.com" class="auth_mail" title="E-mail the corresponding author} ; Sunny Anand ; R.K. Sarin

关键词：Heterojunction ; Tunnel resistance ; Channel resistance ; Band to band tunneling (BTBT) ; Tunnel field effect transistor (TFET)

刊名：Superlattices and Microstructures

出版年：2016

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