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CNKI学位论文(2)
知网期刊论文(3)
在“
Elsevier电子期刊
”中,
命中:
7
条,耗时:0.0179807 秒
在所有数据库中总计命中:
5
条
1.
Effect of gamma-ray irradiation on the device process-induced defects in 4H-SiC epilayers
作者:
T. Miyazaki
a
;
T. Makino
b
;
A. Takeyama
b
;
S. Onoda
b
;
T. Ohshima
b
;
Y. Tanaka
c
;
M. Kandori
c
;
T. Yoshie
c
;
Y. Hijikata
a
;
yasuto@opt.ees.saitama-u.ac.jp
关键词:
4H-SiC
;
Gamma-ray irradiation
;
Photoluminescence (PL) imaging
;
Basal
plane
dislocation
(
BPD
)
;
Stacking fault
;
Deep level transient spectroscopy (DLTS)
刊名:Superlattices and Microstructures
出版年:2016
2.
Basal
plane
dislocation
conversion near the epilayer/substrate interface in epitaxial growth of 4¡ã off-axis 4H-SiC
作者:
Haizheng Song
;
shz.song@gmail.com
;
songha@engr.sc.edu
;
Tangali S. Sudarshan
关键词:
A1. Anisotropic etching
;
A1.
Basal
plane
dislocation
;
A1. Modified KOH&ndash
;
NaOH&ndash
;
MgO eutectic
;
A1. Substrate etching
;
A3. Chemical vapor deposition epitaxy
;
B1. Silicon carbide
刊名:Journal of Crystal Growth
出版年:2013
3.
Optimization of power control in the reduction of
basal
plane
dislocation
s during PVT growth of 4H-SiC single crystals
作者:
B. Gao
;
gaobing@riam.kyushu-u.ac.jp" class="auth_mail
;
K. Kakimoto
关键词:
A1. Line defects
;
A1. Computer simulation
;
A2. Growth from vapor
;
A2. Industrial crystallization
刊名:Journal of Crystal Growth
出版年:15 April 2014
4.
Investigations of defect evolution and
basal
plane
dislocation
elimination in CVD epitaxial growth of silicon carbide on eutectic etched epilayers
作者:
Haizheng Song
;
a
;
songha@engr.sc.edu
;
shz.song@gmail.com
;
Tawhid Rana
a
;
Tangali S. Sudarshan
a
关键词:
A1. Defects
;
A1.
Basal
plane
dislocation
;
A1. Etching
;
A3. Chemical vapor deposition processes
;
A3. Vapor phase epitaxy
;
B1. Silicon carbide
刊名:Journal of Crystal Growth
出版年:2011
5.
Fast homoepitaxial growth of 4H-SiC with low
basal
-
plane
dislocation
density and low trap concentration by hot-wall chemical vapor deposition
作者:
Tsutomu Hori
;
Katsunori Danno
;
Tsunenobu Kimoto
关键词:
A3. Hot-wall epitaxy
;
A3. Vapor phase epitaxy
;
B2. Semiconducting materials
刊名:Journal of Crystal Growth
出版年:2007
6.
Defect reduction in sublimation grown SiC bulk crystals
作者:
Erwin Schmitt
;
Thomas Straubinger
;
Michael Rasp
;
Arnd-Dietrich Weber
关键词:
SiC
;
Bulk growth
;
Micropipes
;
Dislocation
;
Low angle grain boundaries
;
Basal
plane
dislocation
s
;
Numerical simulation
;
Schottky-diode
;
Slip systems
刊名:Superlattices and Microstructures
出版年:2006
7.
Nucleation of AlN on SiC substrates by seeded sublimation growth
作者:
P. Lu
;
J.H. Edgar
;
R.G. Lee
;
J. Chaudhuri
关键词:
A1. Nucleation
;
A2. Growth from vapor
;
B1. Nitrides
刊名:Journal of Crystal Growth
出版年:2007
1
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