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内部出版物
在“
Elsevier电子期刊
”中,
命中:
63
条,耗时:0.0609707 秒
1.
Photoreflectance investigation of band gap renormalization and the
Burstein
-Moss effect in Si doped GaN grown by MOVPE
作者:
M. Bouzidi
;
elbouzidimed16@yahoo.com" class="auth_mail" title="E-mail the corresponding author
;
Z. Benzarti
;
I. Halidou
;
S. Soltani
;
Z. Chine
;
B. EL Jani
关键词:
GaN
;
Si
;
Photoreflectance
;
Burstein
&
ndash
;
Moss effect
;
Band gap renormalization
;
Nonparabolic conduction band
刊名:Materials Science in Semiconductor Processing
出版年:2016
2.
Study of valence band tailing effect induced by electronic excitations in nanocrystalline cadmium oxide thin films
作者:
Sanjeev Kumar
a
;
sanjeevkumarphy@gmail.com" class="auth_mail" title="E-mail the corresponding author
;
Fouran Singh
b
;
A. Kapoor
a
关键词:
Nanocrystalline CdO film
;
Burstein
&
ndash
;
Moss (BM) shift
;
Valence band tailing
;
Urbach energy
;
Energetic ions
刊名:Optik - International Journal for Light and Electron Optics
出版年:2016
3.
Effect of carrier concentration on the optical band gap of TiO
2
nanoparticles
作者:
Shamsa Munir
a
;
Syed Mujtaba Shah
a
;
smschem69@yahoo.com" class="auth_mail" title="E-mail the corresponding author
;
Hazrat Hussain
a
;
Rafaqat Ali khan
b
关键词:
Doping
;
Bathochromic shift
;
Burstein
&
ndash
;
Moss effect
;
Carrier concentration
刊名:Materials & Design
出版年:2016
4.
Band gap engineering and low temperature transport phenomenon in highly conducting antimony doped tin oxide thin films
作者:
M.P.S. Rana
a
;
mpsrrana@gmail.com" class="auth_mail" title="E-mail the corresponding author
;
Fouran Singh
b
;
fouran@gmail.com" class="auth_mail" title="E-mail the corresponding author
;
Sandhya Negi
a
;
Subodh K. Gautam
b
;
R.G. Singh
c
;
R.C. Ramola
a
关键词:
Transparent Conducting Oxide (TCO)
;
Burstein
&
ndash
;
Moss (BM) shift
;
Quantum Confinement
;
Amorphization
;
Nearest neighbour hopping (NNH) and Variable Range Hopping (VRH)
刊名:Ceramics International
出版年:2016
5.
Investigation of the effect of Mg doping for improvements of optical and electrical properties
作者:
Mujdat Caglar
;
mcaglar@anadolu.edu.tr" class="auth_mail" title="E-mail the corresponding author
;
mcaglar@semiconductorslab.com" class="auth_mail" title="E-mail the corresponding author
;
Yasemin Caglar
;
Saliha Ilican
关键词:
Mg doped ZnO films
;
Sol gel
;
Burstein
&
ndash
;
Moss effect
;
Single oscillator parameters
;
Hall effect
刊名:Physica B: Physics of Condensed Matter
出版年:2016
6.
Influence of electronic excitations on structural, optical and electrical properties of undoped and antimony doped tin oxide thin films
作者:
M.P.S. Rana
a
;
mpsrrana@gmail.com" class="auth_mail" title="E-mail the corresponding author
;
Fouran Singh
b
;
Kanchan Joshi
a
;
Sandhya Negi
a
;
R.C. Ramola
a
关键词:
Transparent conducting oxide (TCO)
;
IV&
ndash
;
VI semiconductors
;
Ion irradiations effects
;
Burstein
-Moss (BM) shift
;
Quantum confinement
;
Urbach energy
刊名:Thin Solid Films
出版年:2016
7.
Room temperature ferromagnetism in undoped and Mn doped t-ZrO
2
nanostructures originated due to oxygen vacancy and effect of Mn doping on its optical properties
作者:
Sachin Kumar
;
Animesh K. Ojha
;
animesh@mnnit.ac.in" class="auth_mail" title="E-mail the corresponding author
;
animesh198@gmail.com" class="auth_mail" title="E-mail the corresponding author
关键词:
Magnetic materials
;
Nanostructures
;
Sol&
ndash
;
gel growth
;
Optical properties
刊名:Materials Chemistry & Physics
出版年:2016
8.
ZnO thin films prepared by atomic layer deposition at various temperatures from 100 to 180 °C with three-pulsed precursors in every growth cycle
作者:
Yung-Chen Cheng
a
;
Kai-Yun Yuan
b
;
Miin-Jang Chen
b
;
mjchen@ntu.edu.tw" class="auth_mail" title="E-mail the corresponding author
关键词:
Zinc oxide thin films
;
Three-pulsed precursors
;
Atomic layer deposition (ALD)
;
Burstein
&
ndash
;
Moss effect
;
Bandgap renormalization
刊名:Journal of Alloys and Compounds
出版年:2016
9.
Utility of Procedural Sedation as a Marker for Quality Assurance in Emergency Medicine
作者:
Elizabeth M. Foley
;
MD
;
Richard E. Wolfe
;
MD
;
Jonathan L.
Burstein
;
MD
;
Jonathan A. Edlow
;
MD
;
Shamai A. Grossman
;
MD
;
MS
关键词:
procedural sedation
;
quality assurance
;
error
;
adverse event
;
conscious sedation
刊名:Journal of Emergency Medicine
出版年:2016
10.
Many-body, Pauli blocking and carrier-impurity interaction effects on the band gap of aluminum doped zinc oxide thin films: A new method to evaluate both hole and electron effective masses of degenerate semiconductors
作者:
Asghar Esmaeili
a
;
b
;
a.esmaeili@urmia.ac.ir" class="auth_mail" title="E-mail the corresponding author
关键词:
Burstein
-Moss effect
;
Many-body interaction effect
;
Al doped ZnO
;
Optical properties
;
Band gap widening and narrowing
刊名:Current Applied Physics
出版年:2016
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