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在“Elsevier电子期刊”中，命中：185条，耗时：0.0459778 秒

在所有数据库中总计命中：1,640条

1.Impact of quantum confinement on transport and the electrostatic driven performance of silicon nanowire transistors at the scaling limit

作者：Talib Al-Ameri^a ; ^b ; ^{t.ali.1@research.gla.ac.uk} ; Vihar P. Georgiev^a ; Toufik Sadi^a ; Yijiao Wang^a ; ^c ; Fikru Adamu-Lema^a ; Xingsheng Wang^d ; Salvatore M. Amoroso^d ; Ewan Towie^d ; Andrew Brown^d ; Asen Asenov^a ; ^d

关键词：CMOS ; Electrostatics ; Nanowire transistors ; Performance ; Quantum effects ; TCAD

刊名：Solid-State Electronics

出版年：2017

2.Reevaluating dune scaling relations

作者：Ryan W. Bradley ; ^{rwbradle@sfu.ca} ; Jeremy G. Venditti

刊名：Earth-Science Reviews

出版年：2017

3.Entrance length effects on Graetz number scaling in laminar duct flows with periodic obstructions: Transport number correlations for spacer-filled membrane channel flows

作者：Wilko Rohlfs^a ; ^b ; ; John H. Lienhard V^a

关键词：Laminar duct flow ; Heat transfer coefficient ; Mass transfer coefficient ; Nusselt number correlation ; Prandtl number ; Numerical simulation ; Sherwood number ; Schmidt number

刊名：International Journal of Heat and Mass Transfer

出版年：2016

4.A 2D compact model for lightly doped DG MOSFETs (P-DGFETs) including negative bias temperature instability (NBTI) and short channel effects (SCEs)

作者：Omnia Samy^a ; ^b ; Hamdy Abdelhamid^b ; ^{hamdy.abdelhamid@gmail.com} ; Yehea Ismail^b ; Abdelhalim Zekry^a

关键词：Negative bias temperature instability (NBTI) ; Analytical modeling ; 2D Poisson equation ; Double-gate (DG) ; Reliability ; Aging ; Short channel effects (SCEs)

刊名：Microelectronics Reliability

出版年：2016

5.Multiple-photon disambiguation on stripline-anode Micro-Channel Plates

作者：Glenn R. Jocher^a ; ^{glenn.jocher@ultralytics.com" class="auth_mail" title="E-mail the corresponding author} ; Matthew J. Wetstein^b ; ^{mwetstein@uchicago.edu" class="auth_mail" title="E-mail the corresponding author} ; Bernhard Adams^e ; ^{badams@incomusa.com" class="auth_mail" title="E-mail the corresponding author} ; Kurtis Nishimura^a ; ^{kurtis.nishimura@ultralytics.com" class="auth_mail" title="E-mail the corresponding author} ; Shawn M. Usman^c ; ^d ; ^{shawn.usman@nga.mil" class="auth_mail" title="E-mail the corresponding author}

关键词：Stripline ; Anode ; Micro-Channel Plate (MCP) ; Large Area Picosecond Photo-Detector (LAPPD) ; Photo-electron (PE)

刊名：Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

出版年：2016

6.Investigation of specimen size effects by in-situ microcompression of equal channel angular pressed copper

作者：C. Howard^a ; ^{cam7745@berkeley.edu" class="auth_mail" title="E-mail the corresponding author} ; D. Frazer^a ; A. Lupinacci^b ; S. Parker^a ; R.Z. Valiev^c ; ^d ; C. Shin^e ; B. William Choi^f ; P. Hosemann^a

关键词：Microcompression tests ; Scaling effects ; Mechanical properties ; Grain size

刊名：Materials Science & Engineering A

出版年：2016

7.A comprehensive analysis of nanoscale single- and multi-gate MOSFETs

作者：Rupendra Kumar Sharma^a ; ¹ ; ^{rupendra1984@gmail.com" class="auth_mail" title="E-mail the corresponding author} ; Charalabos A. Dimitriadis^b ; Matthias Bucher^a ; ¹ ; ^{bucher@electronics.tuc.gr" class="auth_mail" title="E-mail the corresponding author}

关键词：Multi-gate MOSFETs ; Analog/RF performance ; Linearity ; ATLAS device simulator

刊名：Microelectronics Journal

出版年：2016

8.The hysteresis-free negative capacitance field effect transistors using non-linear poly capacitance

作者：S.-T. Fan^a ; J.-Y. Yan^a ; D.-C. Lai^a ; C.W. Liu^a ; ^b ; ^c ; ^{chee@cc.ee.ntu.edu.tw" class="auth_mail" title="E-mail the corresponding author}

关键词：Negative capacitance ; NCFET ; Ferroelectric ; FeFET

刊名：Solid State Electronics

出版年：2016

9.A review of the mechanical stressors efficiency applied to the ultra-thin body & buried oxide fully depleted silicon on insulator technology

作者：Pierre Morin^a ; ^{pierre.morin@st.com" class="auth_mail" title="E-mail the corresponding author} ; Sylvain Maitrejean^b ; Frederic Allibert^d ; Emmanuel Augendre^b ; Qing Liu^a ; Nicolas Loubet^a ; Laurent Grenouillet^b ; Alexandre Pofelski^f ; Kangguo Chen^c ; Ali Khakifirooz^c ; Romain Wacquez^b ; Shay Reboh^e ; Aurore Bonnevialle^e ; ^f ; Cyrille le Royer^e ; Yves Morand^f ; Joel Kanyandekwe^a ; Daniel Chanemougamme^a ; Yann Mignot^a ; Yann Escarabajal^a ; Benoit Lherron^a ; Fadoua Chafik^a ; Sonia Pilorget^a ; Pierre Caubet^f ; Maud Vinet^e ; Laurent Clement^f ; Barbara Desalvo^b ; Bruce Doris^c ; Walter Kleemeier^a

刊名：Solid State Electronics

出版年：2016

10.Advantages of different source/drain engineering on scaled UTBOX FDSOI nMOSFETs at high temperature operation

作者：Talitha Nicoletti ; Sara Dereste dos Santos ; Jo茫o Antonio Martino ; Marc Aoulaiche ; Anabela Veloso ; Malgorzata Jurczak ; Eddy Simoen ; Cor Claeys

关键词：UTBOX ; FDSOI ; High temperature ; Underlap devices ; Channel length scaling

刊名：Solid-State Electronics

出版年：January, 2014

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