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CNKI学位论文(81)
知网期刊论文(45)
在“
Elsevier电子期刊
”中,
命中:
79
条,耗时:小于0.01 秒
在所有数据库中总计命中:
126
条
1.
Stress analysis of Cu/low-
k
interconnect structure during whole Cu-CMP process using finite element method
作者:
Chenglong Liao
;
Dan Guo
;
guodan26@mail.tsinghua.edu.cn
;
Shizhu Wen
;
Xinchun Lu
;
Jianbin Luo
刊名:Microelectronics Reliability
出版年:2013
2.
Enhanced growth and Cu diffusion barrier properties of thermal ALD TaNC films in Cu/low-
k
interconnects
作者:
Henry Wojci
k
;
Christoph Hossbach
;
Christoph
K
ubasch
;
Patric
k
Verdonc
k
;
Yohan Barbarin
;
Ulrich. Mer
k
el
;
Johann W. Bartha
;
Rene H¨¹bner
;
Hans-J¨¹rgen Engelmann
;
Michael Friedemann
关键词:
ALD TaN
;
Cu diffusion barrier
;
Triangular voltage sweep
;
Plasma treatment
;
Low-
k
刊名:Microelectronic Engineering
出版年:2013
3.
Co capping layers for Cu/low-
k
interconnects
作者:
C.-C. Yang
a
;
b
;
ChihChao@us.ibm.com
;
P. Flaitz
c
;
B. Li
d
;
F. Chen
d
;
C. Christiansen
d
;
S.-Y. Lee
e
;
P. Ma
e
;
D. Edelstein
a
;
b
关键词:
Cobalt
;
Chemical vapor deposition
;
Reliability
刊名:Microelectronic Engineering
出版年:2012
4.
Development of compatible wet-clean stripper for integration of CoWP metal cap in Cu/low-
k
interconnects
作者:
Aiping Wu
;
Eugene Baryschpolec
;
Madhu
k
ar Rao
;
Matthias Schaller
;
Christin Bartsch
;
Susanne Leppac
k
;
Andreas Ott
关键词:
Cu/low-
k
integration
;
Wet-clean stripper
;
CoWP compatibility
;
CoWP/Cu galvanic corrosion
;
Porous low-
k
compatibility
刊名:Microelectronic Engineering
出版年:2010
5.
Comprehensive TDDB lifetime prediction methodology for intrinsic and extrinsic failures in Cu interconnect dielectrics
作者:
N. Suzumura
;
naohito.suzumura.zn@renesas.com
;
M. Ogasawara
;
K
. Ma
k
abe
;
T.
K
amoshima
;
T. Ouchi
;
T. Furusawa
;
E. Mura
k
ami
关键词:
Time-dependent dielectric brea
k
down (TDDB)
;
Lifetime prediction
;
Cu/low-
k
;
Field acceleration model
;
Thinning model
;
Critical area analysis (CAA)
刊名:Microelectronic Engineering
出版年:2013
6.
Moisture absorption impact on Cu alloy/low-
k
reliability during process queue time
作者:
H. Tsuchiya
a
;
hidea
k
i.tsuchiya.ym@renesas.com
;
S. Yo
k
ogawa
a
;
H.
K
unishima
a
;
T.
K
uwajima
a
;
T. Usami
b
;
Y. Miura
b
;
K
. Ohto
b
;
K
. Fujii
b
;
M. Sa
k
urai
a
关键词:
Electromigration
;
Time dependent dielectric brea
k
down
;
Copper alloy interconnects
;
Low-
k
;
Moisture absorption
;
Queue time
刊名:Microelectronic Engineering
出版年:2013
7.
Reliability estimation and failure mode prediction for 3D chip stac
k
ing pac
k
age with the application of wafer-level underfill
作者:
Chang-Chun Lee
a
;
changchunlee@cycu.edu.tw
;
Tsung-Fu Yang
b
;
Chih-Sheng Wu
a
;
K
uo-Shu Kao
c
;
Ren-Chin Cheng
c
;
Tai-Hong Chen
c
关键词:
Wafer-level underfill (WLUF)
;
FEA
;
Microbumps
;
Reliability
;
3D pac
k
ages
刊名:Microelectronic Engineering
出版年:2013
8.
Advanced wafer thinning technology and feasibility test for 3D integration
作者:
Young Su
k
Kim
a
;
b
;
k
imys@sogo.t.u-to
k
yo.ac.jp
;
Nobuhide Maeda
a
;
Hide
k
i Kitada
a
;
K
oji Fujimoto
a
;
Shoichi
K
odama
a
;
A
k
ihito Kawai
b
;
K
azuhisa Arai
b
;
K
ousu
k
e Suzu
k
i
c
;
Tomoji Na
k
amura
d
;
Ta
k
ayu
k
i Ohba
a
关键词:
Wafer-on-wafer (WOW)
;
Three-dimensional (3D) integration
;
Through-Silicon-Via
;
TSV
;
Auto-TTV
;
Total thic
k
ness variation
;
Bac
k
grind (BG)
;
Strain transistor
;
CMOS
;
FRAM
;
Mobility
;
Lea
k
age current
;
Gettering
刊名:Microelectronic Engineering
出版年:2013
9.
High-precision alignment of electron tomography tilt series using mar
k
ers formed in helium-ion microscope
作者:
M. Hayashida
;
T. Iijima
;
M. Tsu
k
ahara
;
S. Ogawa
关键词:
Transmission electron microscope
;
Electron tomography
;
Helium-ion microscopy
;
Fiducial mar
k
er
;
Tilt series
;
Alignment precision
刊名:Micron
出版年:2013
10.
Competitive and cost effective copper/low-
k
interconnect (BEOL) for 28 nm CMOS technologies
作者:
R. Augur
1
;
rod.augur@globalfoundries.com
;
C. Child
1
;
J.H. Ahn
3
;
T.J. Tang
2
;
L. Clevenger
4
;
D.
K
ioussis
1
;
H. Masuda
7
;
R. Srivastava
2
;
Y. Oda
5
;
H. Oguma
7
;
R. Quon
4
;
B.
K
im
6
;
H. Sheng
2
;
S. Hiroo
k
a
7
;
R. Gupta
1
;
A. Thomas
4
;
S.M. Singh
2
;
Q. Fang
2
;
R. Schiwon
8
;
B. Hamieh
6
;
E. Wornyo
4
;
S. Allen
4
;
E.
K
altalioglu
8
;
G. Ribes
6
;
G. Zhang
2
;
T. Fryxell
1
;
A. Ogino
7
;
E. Shimada
7
;
H. Aizawa
5
;
H. Minda
5
;
S.O.
K
im
8
;
T. O
k
i
7
;
K
. Fujii
7
;
M. Pallachalil
8
;
T. Ta
k
ewa
k
i
5
;
C.
K
. Hu
4
;
B. Sundlof
4
;
D. Permana
1
;
T. Bolom
1
;
B. Engel
4
;
C. Labelle
1
;
B. Sapp
4
;
T. Nogami
4
;
A. Simon
4
;
H. Shobha
4
;
S. Gates
4
;
E.T. Ryan
4
;
G. Bonilla
4
;
T. Daubenspec
k
4
;
T. Shaw
4
;
G. Osborne
4
;
A. Grill
4
;
D. Edelstein
4
;
D. Restaino
4
;
S. Molis
4
;
T. Spooner
4
;
P. Ferreira
6
;
G. Biery
4
;
R. Sampson
6
关键词:
Cu/low-
k
;
UL
K
;
Interconnect
;
BEOL
;
28
;
nm
刊名:Microelectronic Engineering
出版年:2012
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