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内部出版物
在“
Elsevier电子期刊
”中,
命中:
3,184
条,耗时:小于0.01 秒
1.
A numerical framework for modeling flexoelectricity and Maxwell stress in soft
dielectrics
at finite strains
作者:
J. Yvonnet
a
;
julien.yvonnet@univ-paris-est.fr
;
L.P. Liu
b
;
c
关键词:
Flexoelectricity
;
Dielectrics
;
Finite elements
;
Nonlinear
dielectrics
;
Maxwell stress
;
Finite strains
刊名:Computer Methods in Applied Mechanics and Engineering
出版年:2017
2.
Interfacial modulation and electrical properties improvement of solution-processed ZrO
2
gate
dielectrics
upon Gd incorporation
作者:
D.Q. Xiao
a
;
G. He
a
;
ganghe01@issp.ac.cn
;
J.G. Lv
b
;
jglv@hftc.edu.cn
;
P.H. Wang
a
;
M. Liu
c
;
mliu@issp.ac.cn
;
J. Gao
a
;
P. Jin
a
;
S.S. Jiang
a
;
W.D. Li
a
;
Z.Q. Sun
a
关键词:
High-k gate
dielectrics
;
Gd incorporation
;
XPS
;
Electrical properties
;
Sol-gel
刊名:Journal of Alloys and Compounds
出版年:2017
3.
Annealing-temperature-modulated optical, electrical properties, and leakage current transport mechanism of sol-gel-processed high-k HfAlO
x
gate
dielectrics
作者:
P. Jin
a
;
G. He
a
;
hegang@ahu.edu.cn
;
Z.B. Fang
b
;
csfzb@usx.edu.cn
;
M. Liu
c
;
mliu@issp.ac.cn
;
D.Q. Xiao
a
;
J. Gao
a
;
S.S. Jiang
a
;
W.D. Li
a
;
Z.Q. Sun
a
;
M. Zhang
a
;
d
关键词:
High-k HfAlOx gate
dielectrics
;
Sol-gel
;
Optical properties
;
Electrical properties
;
Leakage current transport mechanism
刊名:Ceramics International
出版年:2017
4.
Metal-insulator-SiC Schottky structures using HfO
2
and TiO
2
dielectrics
作者:
I.R. Kaufmann
a
;
ivanrodrigo.kaufmann@gmail.com
;
A. Pick
b
;
M.B. Pereira
b
;
H. Boudinov
a
;
b
关键词:
MIS structure
;
SiC
;
Schottky barrier height
;
HfO2
;
TiO2
刊名:Thin Solid Films
出版年:2017
5.
The structural and electrical comparison of Y
2
O
3
and Ti-doped Y
2
O
3
dielectrics
作者:
Ming Ling Lee
a
;
Chyuan Haur Kao
b
;
d
;
e
;
chkao@mail.cgu.edu.tw
;
Hsiang Chen
c
;
Chan Yu Lin
d
;
Yu Teng Chung
b
;
Kow Ming Chang
a
关键词:
Y2O3
;
Y2Ti2O5
;
Ti-doped
刊名:Ceramics International
出版年:2017
6.
Low operating voltage organic transistors and circuits with anodic titanium oxide and phosphonic acid self-assembled monolayer
dielectrics
作者:
Hiroaki Jinno
a
;
Tomoyuki Yokota
a
;
Naoji Matsuhisa
a
;
Martin Kaltenbrunner
b
;
Yutaro Tachibana
a
;
Takao Someya
a
;
c
;
d
;
someya@ee.t.u-tokyo.ac.jp" class="auth_mail" title="E-mail the corresponding author
关键词:
Organic thin-film transistors
;
Low driving-voltage
;
Ring oscillators
刊名:Organic Electronics
出版年:2017
7.
Interface quality modulation, band alignment modification and optimization of electrical properties of HfGdO/Ge gate stacks by nitrogen incorporation
作者:
J. Gao
a
;
b
;
G. He
a
;
ganghe01@issp.ac.cn
;
Z.B. Fang
c
;
csfzb@usx.edu.cn
;
J.G. Lv
d
;
jglv@hftc.edu.cn
;
M. Liu
e
;
Z.Q. Sun
a
关键词:
High-k gate
dielectrics
;
Interface quality
;
Band alignment
;
Electrical properties
;
Leakage current mechanism
刊名:Journal of Alloys and Compounds
出版年:2017
8.
A methacryl ethyl-functionalized soluble polypyrrole: Synthesis, characterization, and potentiality in rapid fabrication of high-aspect-ratio pillar arrays
作者:
Guowei Lv
a
;
Shihu Zhang
a
;
Guolong Wang
a
;
Jinyou Shao
b
;
Hongmiao Tian
b
;
Demei Yu
a
;
dmyu@mail.xjtu.edu.cn
关键词:
Soluble polypyrrole
;
Conductive photoresist
;
Electrowetting on
dielectrics
;
High aspect ratio
;
Electrowetting driven structure formation
刊名:Reactive and Functional Polymers
出版年:2017
9.
Nonlinear electroelastic deformations of dielectric elastomer composites: II — Non-Gaussian elastic
dielectrics
作者:
Victor Lefè
;
vre
vlefevre@illinois.edu
;
Oscar Lopez-Pamies
;
pamies@illinois.edu
关键词:
Comparison medium methods
;
Crouzeix&ndash
;
Raviart conforming elements
;
Microstructures
;
Electroactive materials
;
Electrostriction
刊名:Journal of the Mechanics and Physics of Solids
出版年:2017
10.
Nonlinear electroelastic deformations of dielectric elastomer composites: I—Ideal elastic
dielectrics
作者:
Victor Lefè
;
vre
vlefevre@illinois.edu
;
Oscar Lopez-Pamies
;
pamies@illinois.edu
关键词:
Iterated homogenization
;
Viscosity solution
;
Microstructures
;
Electroactive materials
;
Electrostriction
刊名:Journal of the Mechanics and Physics of Solids
出版年:2017
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