设为首页
收藏本站
网站地图
|
English
|
公务邮箱
About the library
Background
History
Leadership
Organization
Readers' Guide
Opening Hours
Collections
Help Via Email
Publications
Electronic Information Resources
常用资源
电子图书
期刊论文
学位会议
外文资源
特色专题
内部出版物
CNKI学位论文(1)
在“
Elsevier电子期刊
”中,
命中:
4
条,耗时:小于0.01 秒
在所有数据库中总计命中:
1
条
1.
Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications
作者:
Cl¨¦ment Fleury
;
Rimma Zhytnytska
;
Sergey Bychikhin
;
Mattia Cappriotti
;
Oliver Hilt
;
Domenica Visalli
;
Gaudenzio Meneghesso
;
Enrico Zanoni
;
Joachim W¨¹rfl
;
Joff Derluyn
;
Gottfried Strasser
;
Dionyz
Pogany
刊名:Microelectronics Reliability
出版年:2013
2.
Reliability investigation of the degradation of the surface passivation of InAlN/GaN HEMTs using a dual gate structure
作者:
Clemens Ostermaier
;
Peter Lagger
;
Mohammed Alomari
;
Patrick Herfurth
;
David Maier
;
Alex
;
er Alexewicz
;
Marie-Antoinette di Forte-Poisson
;
Sylvain L. Delage
;
Gottfried Strasser
;
Dionyz
Pogany
;
Erhard Kohn
刊名:Microelectronics Reliability
出版年:2012
3.
IR thermography and FEM simulation analysis of on-chip temperature during thermal-cycling power-metal reliability testing using in situ heated structures
作者:
Helmut Kö
;
ck
;
Vladimir Koš
;
el
;
Christian Djelassi
;
Michael Glavanovics
;
Dionyz
Pogany
刊名:Microelectronics Reliability
出版年:2009
4.
Transient interferometric mapping of carrier plasma during external transient latch-up phenomena in latch-up test structures and I/O cells processed in CMOS technology
作者:
Michael Heer
;
Krzysztof Domań
;
ski
;
Kai Esmark
;
Ulrich Glaser
;
Dionyz
Pogany
;
Erich Gornik
;
Wolfgang Stadler
刊名:Microelectronics Reliability
出版年:2009
1
按检索点细分(4)
作者(4)
按出版年细分(4)
2013年(1)
2012年(1)
2009年(2)
NGLC 2004-2010.National Geological Library of China All Rights Reserved.
Add:29 Xueyuan Rd,Haidian District,Beijing,PRC. Mail Add: 8324 mailbox 100083
For exchange or info please contact us via
email
.