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CNKI学位论文(1527)
知网期刊论文(379)
在“
Elsevier电子期刊
”中,
命中:
157
条,耗时:0.0240168 秒
在所有数据库中总计命中:
1,906
条
1.
Analytical modeling of subthreshold characteristics of ion-implanted symmetric
double
gate
junctionless field effect transistors
作者:
Balraj Singh
balraj.bits@gmail.com
;
Deepti Gola
er.deeptigola@gmail.com
;
Kunal Singh
kunals.rs.ece@itbhu.ac.in
;
Ekta Goel
ekta.goel.ece11@iitbhu.ac.in
;
Sanjay Kumar
sanjay.kumar.ece11@iitbhu.ac.in
;
Satyabrata Jit
;
sjit.ece@iitbhu.ac.in
关键词:
Junctionless FET
;
Double
-
gate
;
Gaussian-like doping
;
Short channel effects
;
Subthreshold current
;
Subthreshold swing
刊名:Materials Science in Semiconductor Processing
出版年:2017
2.
Effect of spacer dielectric engineering on Asymmetric Source Underlapped
Double
Gate
MOSFET using Gate Stack
作者:
Ankush Chattopadhyay
b
;
Arpan Dasgupta
b
;
arpan24470367@gmail.com
;
Rahul Das
b
;
Atanu Kundu
a
;
Chandan K. Sarkar
b
关键词:
Source underlap
;
Gate
Stack
;
Analog and RF analysis
;
Non Quasi Static
;
Single stage amplifier
刊名:Superlattices and Microstructures
出版年:2017
3.
Sandwich
double
gate
vertical tunneling field-effect transistor
作者:
Ying Wang
a
;
wangying7711@yahoo.com" class="auth_mail" title="E-mail the corresponding author
;
Wen-hao Zhang
b
;
Cheng-hao Yu
a
;
Fei Cao
a
关键词:
High-k dielectric material
;
Double
gate
(
DG
)
;
Vertical tunnel field effect transistor (VTFET)
刊名:Superlattices and Microstructures
出版年:2016
4.
Analytical modeling and numerical simulation of novel
double
-
gate
InGaAs vertical nanowire transistor device for threshold voltage tuning and improved performance
作者:
Subha Subramaniam
a
;
b
;
subha.sakec@gmail.com" class="auth_mail" title="E-mail the corresponding author
;
Sangeeta M. Joshi
c
;
R.N. Awale
a
关键词:
Vertical nanowire
;
DG
-VNWT
;
High-k
gate
stack
;
Leakage current
;
Analytical model
刊名:Engineering Science and Technology,an International Journal
出版年:2016
5.
Analytical model for an asymmetric
double
-
gate
MOSFET with
gate
-oxide thickness and flat-band voltage variations in the subthreshold region
作者:
Yong Hyeon Shin
;
Ilgu Yun
;
iyun@yonsei.ac.kr" class="auth_mail" title="E-mail the corresponding author
关键词:
Asymmetric
double
-
gate
metal-oxide-semiconductor transistor
;
Silicon oxide thickness
;
Flat-band voltage variation
;
Analytical model
;
Body doping concentration
刊名:Solid State Electronics
出版年:2016
6.
Impact of Lateral Straggle on the Analog/RF Performance of Asymmetric
Gate
Stack
Double
Gate MOSFET
作者:
Gollamudi Sai Sivaram
a
;
Shramana Chakraborty
a
;
chakrashramana11@gmail.com" class="auth_mail" title="E-mail the corresponding author
;
Rahul Das
a
;
Arpan Dasgupta
a
;
Atanu Kundu
a
;
Chandan K. Sarkar
b
关键词:
Gate
stack
;
Asymmetric underlap
;
Source underlap
;
Lateral straggle
;
Analog and RF performance
;
Non-quasi-static effects (NQS)
刊名:Superlattices and Microstructures
出版年:2016
7.
Impact of carrier quantum confinement on the short channel effects of
double
-
gate
silicon-on-insulator FINFETs
作者:
Aditya Sankar Medury
;
aditya.medury@berkeley.edu" class="auth_mail" title="E-mail the corresponding author
;
K.N. Bhat
;
Navakanta Bhat
关键词:
DG
FINFET
;
Electrostatics
;
Quantum confinement
;
Short channel effects
刊名:Microelectronics Journal
出版年:2016
8.
A 2D compact model for lightly doped
DG
MOSFETs (P-DGFETs) including negative bias temperature instability (NBTI) and short channel effects (SCEs)
作者:
Omnia Samy
a
;
b
;
Hamdy Abdelhamid
b
;
hamdy.abdelhamid@gmail.com
;
Yehea Ismail
b
;
Abdelhalim Zekry
a
关键词:
Negative bias temperature instability (NBTI)
;
Analytical modeling
;
2D Poisson equation
;
Double
-
gate
(
DG
)
;
Reliability
;
Aging
;
Short channel effects (SCEs)
刊名:Microelectronics Reliability
出版年:2016
9.
Nanoscale T-shaped
Double
Gate
DG
MOSFET: Numerical Investigation for Analog/RF and Digital Performance
作者:
Vandana Kumari
a
;
b
;
vandanakumari511@gmail.com" class="auth_mail" title="E-mail the corresponding author
;
Aravindan Ilango
c
;
aravindanilango93@gmail.com" class="auth_mail" title="E-mail the corresponding author
;
Manoj Saxena
d
;
saxena_manoj77@yahoo.co.in" class="auth_mail" title="E-mail the corresponding author
;
Mridula Gupta
a
;
mridula@south.du.ac.in" class="auth_mail" title="E-mail the corresponding author
关键词:
Modeling
;
T-shaped
gate
;
ATLAS
刊名:Superlattices and Microstructures
出版年:2016
10.
Analytical model for random dopant fluctuation in
double
-
gate
MOSFET in the subthreshold region using macroscopic modeling method
作者:
Yong Hyeon Shin
;
Ilgu Yun
;
iyun@yonsei.ac.kr" class="auth_mail" title="E-mail the corresponding author
关键词:
Random dopant fluctuation
;
Double
-
gate
metal-oxidesemiconductor transistor
;
Analytical model
;
Macroscopic modeling method
;
Green&rsquo
;
s function
刊名:Solid State Electronics
出版年:2016
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