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在“Elsevier电子期刊”中，命中：16,173条，耗时：小于0.01 秒

1.Growth of a/c grain boundary with well-defined facet in single-crystalline YBa₂Cu₃O_{7 − δ} film by liquid phase epitaxy

作者：Hui Xiang^a ; ¹ ; Jun Qian^a ; ¹ ; Linshan Guo^a ; Xin Yao^a ; ^b ; ^{xyao@sjtu.edu.cn} ; Jie Xiong^c ; Wei Peng^d ; Qunli Rao^e

关键词：High temperature superconductor ; Josephson junction device ; a/c grain boundary structure ; Liquid phase epitaxy (LPE) ; Selective growth

刊名：Scripta Materialia

出版年：2017

2.InGaAs and GaAs quantum dot solar cells grown by droplet epitaxy

作者：Peng Yu^a ; Jiang Wu^b ; ^{jiang.wu@ucl.ac.uk} ; Lei Gao^c ; Huiyun Liu^b ; Zhiming Wang^a ; ^{zhmwang@uestc.edu.cn}

关键词：Quantum dots ; Solar cells ; Drop epitaxy ; Intraband ; Interband ; Intermediate band

刊名：Solar Energy Materials and Solar Cells

出版年：2017

3.Cu₂ZnSnSe₄ thin films grown by molecular beam epitaxy

作者：Y. Curé ; ^a ; ^b ; S. Pouget^a ; ^b ; V. Reita^a ; ^c ; H. Boukari^a ; ^c ;

关键词：Molecular beam epitaxy ; Photovoltaics ; Thin films ; Semiconductors

刊名：Scripta Materialia

出版年：2017

4.Suspended Ga₂Se₃ film and epitaxial Bi₂Se₃(221) on GaSb(001) by molecular-beam epitaxy

作者：Bin Li ; Yipu Xia ; Wingkin Ho ; Maohai Xie ; ^mhxie@hku.hk

关键词：B2. Bi2Se3 ; B2. Ga2Se3 ; A1. Suspended Ga2Se3 Film ; B1. Topological insulator ; A3. Molecular-Beam Epitaxy

刊名：Journal of Crystal Growth

出版年：2017

5.Strain in epitaxial high-index Bi₂Se₃(221) films grown by molecular-beam epitaxy

作者：Bin Li^a ; Weiguang Chen^b ; ^c ; Xin Guo^a ; Wingkin Ho^a ; Xianqi Dai^b ; ^c ; Jinfeng Jia^d ; Maohai Xie^a ; ^mhxie@hku.hk

关键词：High-index Bi2Se3 ; Strain ; Topological insulator ; Heterostructure ; Molecular-beam epitaxy

刊名：Applied Surface Science

出版年：2017

6.Thick nonpolar m-plane and semipolar GaN on an ammonothermal seed by tri-halide vapor-phase epitaxy using GaCl₃

作者：Kenji Iso ; ^{isokenji@cc.tuat.ac.jp} ; Karen Matsuda ; Nao Takekawa ; Kazuhiro Hikida ; Naoto Hayashida ; Hisashi Murakami ; Akinori Koukitu

关键词：A1. Substrates ; A3. Hydride vapor-phase epitaxy ; B1. Nitrides ; B2. Semiconducting III-V materials

刊名：Journal of Crystal Growth

出版年：2017

7.Photoluminescence properties of Mg_xZn_1−xO films grown by molecular beam epitaxy

作者：T.Y. Wu^a ; Y.S. Huang^a ; S.Y. Hu^b ; Y.C. Lee^c ; ^{jacklee@mail.tnu.edu.tw} ; K.K. Tiong^a ; C.C. Chang^a ; W.C. Chou^d ; J.L. Shen^e

关键词：A1. Optical microscopy ; A3. Molecular beam epitaxy ; B1. Zinc compounds ; B2. Semiconducting II-VI materials

刊名：Journal of Crystal Growth

出版年：2017

8.Surfactant-mediated epitaxy of thin germanium films on SiGe(001) virtual substrates

作者：J. Schmidt^a ; ^{schmidt@mbe.uni-hannover.de} ; D. Tetzlaff^a ; E. Bugiel^a ; T.F. Wietler^a ; ^b

关键词：A1. Surface morphology ; A3. Molecular beam epitaxy ; A3. Surfactant mediated epitaxy ; B1. Germanium silicon alloys ; B2. Strained Ge ; B2. Virtual substrates

刊名：Journal of Crystal Growth

出版年：2017

9.Growth of uniform CaGe₂ films by alternating layer molecular beam epitaxy

作者：Jinsong Xu ; Jyoti Katoch ; Adam S. Ahmed ; Igor V. Pinchuk ; Justin R. Young ; Ezekiel Johnston-Halperin ; Jonathan Pelz ; Roland K. Kawakami ; ^{kawakami.15@osu.edu}

关键词：A2. Molecular beam epitaxy ; A2. Alternating layer epitaxy ; B1. Calcium compounds ; B1. Nanomaterials

刊名：Journal of Crystal Growth

出版年：2017

10.Indium incorporation in semipolar and nonpolar InGaN grown by plasma assisted molecular beam epitaxy

作者：M. Sawicka^a ; ^b ; ^{sawicka@unipress.waw.pl} ; A. Feduniewicz-Żmuda^a ; M. Kryśko^a ; H. Turski^a ; G. Muziol^a ; M. Siekacz^a ; P. Wolny^c ; C. Skierbiszewski^a ; ^b

关键词：A3. Molecular beam epitaxy ; B1. Nitrides ; A1. Atomic force microscopy ; A1. Characterization

刊名：Journal of Crystal Growth

出版年：2017

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